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Electrical and Electronics Engineering publications abstract of: 10-2012 sorted by title, page: 0
» $H_infty$ Filtering with Combined Linear and Nonlinear Constraints
Abstract:
The work presented here is devoted to the problem of state estimate for systems with multiple linear-nonlinear (LN) combined state constraints. A robust algorithm that allows exact use of these combined constraints is presented based on $H_infty$ filtering, and a sufficient condition is obtained that guarantees the existence of a solution. Extensive Monte Carlo simulations show the effectiveness and superiority of the proposed algorithm.
Autors: Fu, Xiaoyan;Jia, Yingmin;
Appeared in: IEEE Transactions on Aerospace and Electronic Systems
Publication date: Oct 2012, volume: 48, issue:4, pages: 3347 - 3362
Publisher: IEEE
 
» (110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation
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Highlights

Appeared in: Solid-State Electronics
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» (Non-)Reconfigurable Virtual Topology Design Under Multihour Traffic in Optical Networks
Abstract:
This paper investigates offline virtual topology design in transparent optical networks under a multihour traffic demand. The main problem variant addressed here designs a reconfigurable virtual topology that evolves over time to more efficiently utilize network resources (the MH-VTD-R problem). The case of designing a static non-reconfigurable virtual topology that can accommodate the time-varying traffic (the MH-VTD-NR problem) is also considered. The objectives are to minimize: 1) the number of transceivers, which make up for the main network cost; and 2) the frequency of reconfiguration (for MH-VTD-R), which incurs additional overhead and potential service disruption. We formulate this multiobjective problem as an exact mixed integer linear program (MILP). Due to its high complexity, we propose a very efficient heuristic algorithm called Greedy Approach with Reconfiguration Flattening (GARF). GARF not only solves both (non-)reconfigurable problem variants, but it allows for tuning of the relative importance of the two objectives. Exhaustive experiments on real and synthetic traffic and comparison to previous proposals and bounds reveal the merits of GARF with respect to both solution quality and execution time. Furthermore, the obtained results indicate that the maximal transceiver cost savings achieved by the fully reconfigurable case may not be enough to justify the associated increase in reconfiguration cost. However, results show that an advantageous tradeoff between transceiver cost savings and reconfiguration cost can be achieved by a allowing a small number of virtual topology reconfigurations over time.
Autors: Aparicio-Pardo, R.;Skorin-Kapov, N.;Pavon-Marino, P.;Garcia-Manrubia, B.;
Appeared in: IEEE/ACM Transactions on Networking
Publication date: Oct 2012, volume: 20, issue:5, pages: 1567 - 1580
Publisher: IEEE
 
» 0.5V bulk-driven analog building blocks
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Autors:
Appeared in: AEU - International Journal of Electronics and Communications
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 1-Gb/s Transmission Over a Phosphorescent White LED by Using Rate-Adaptive Discrete Multitone Modulation
Abstract:
Light-emitting diodes (LEDs), which will be increasingly used in lighting technology, will also allow for distribution of broadband optical wireless signals. Visible-light communication (VLC) using white LEDs offers several advantages over the RF-based wireless systems, i.e., license-free spectrum, low power consumption, and higher privacy. Mostly, optical wireless can provide much higher data rates. In this paper, we demonstrate a VLC system based on a white LED for indoor broadband wireless access. After investigating the nonlinear effects of the LED and the power amplifier, a data rate of 1 Gb/s has been achieved at the standard illuminance level, by using an optimized discrete multitone modulation technique and adaptive bit- and power-loading algorithms. The bit-error ratio of the received data was , which is within the limit of common forward error correction (FEC) coding. These results twice the highest capacity that had been previously obtained.
Autors: Khalid, A. M.;Cossu, G.;Corsini, R.;Choudhury, P.;Ciaramella, E.;
Appeared in: IEEE Photonics Journal
Publication date: Oct 2012, volume: 4, issue:5, pages: 1465 - 1473
Publisher: IEEE
 
» 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
Abstract:
In this letter, we present the device characteristics of AlGaN/GaN heterostructures grown on 4-in Si using various buffer thicknesses . The transmission electron microscopic image confirms a low dislocation density for our epilayers grown using thick buffer layers. An increase in mobility and a decrease in sheet resistance of these samples were observed owing to improved crystal quality for GaN on thick buffer. Highelectron-mobility transistors (HEMTs) tested for three-terminal off breakdown voltage show signs of breakdown voltage saturation for gate–drain length exceeding 15 . However, an increase in causes a drastic increase in , and a high of 1.4 kV was observed with a specific on-resistance of 9.6 . A figure of merit of was observed for our devices, which is the highest for an AlGaN/GaN HEMT grown on Si.
Autors: Selvaraj, S. L.;Watanabe, A.;Wakejima, A.;Egawa, T.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1375 - 1377
Publisher: IEEE
 
» 100-Hz Linewidth Diode Laser With External Optical Feedback
Abstract:
We present a narrow-linewidth diode laser with optical feedback from a high-finesse two-mirror nonconfocal cavity. The laser's full-width-at-half-maximum linewidth is reduced to 100 Hz, and its instantaneous linewidth to 30 Hz in the Lorentzian fitting. To the best of our knowledge, it is the narrowest linewidth ever achieved with the optical feedback method. The laser phase noise has been significantly reduced by more than 50 dB in the frequency range from 10 Hz to 10 kHz. Our experiment demonstrates the efficient laser linewidth reduction and phase noise suppression by the optical feedback technique.
Autors: Zhao, Y.;Li, Y.;Wang, Q.;Meng, F.;Lin, Y.;Wang, S.;Lin, B.;Cao, S.;Cao, J.;Fang, Z.;Li, T.;Zang, E.;
Appeared in: IEEE Photonics Technology Letters
Publication date: Oct 2012, volume: 24, issue:20, pages: 1795 - 1798
Publisher: IEEE
 
» 135-GHz Micromachined On-Chip Antenna and Antenna Array
Abstract:
This paper presents the design, fabrication and “on-wafer” characterization of multi-membrane-supported and polymer-cavity-backed monopole antenna and 2 1 patch antenna array operating in the 135-GHz frequency range. The designs were fabricated on two-layer benzocyclobutene (BCB) material membrane obtained by micromachining of the low resistivity silicon. The silicon material is removed underneath the monopole antenna to produce a cavity surrounded by metal and filled with polymer. This polymer filled cavity provides a better support to the membrane than conventional air cavity which is extremely important for practical applications. In the meantime, the higher synthesized effective dielectric permittivity of the BCB-polymer mixed region than BCB-air mixed one provides the possibility for compact antenna array designs. The proposed monopole antenna shows a measured impedance bandwidth from 124 to 136 GHz for less than and maximum measured gain of 6.74 dBi at 131 GHz; while the 2 1 patch antenna array achieved a measured impedance bandwidth from 126.5 to 138 GHz for less than and maximum measured gain of 8.66 dBi at 130 GHz.
Autors: Chu, H.;Guo, Y.-X.;Lim, T.-G.;Khoo, Y. M.;Shi, X.;
Appeared in: IEEE Transactions on Antennas and Propagation
Publication date: Oct 2012, volume: 60, issue:10, pages: 4582 - 4588
Publisher: IEEE
 
» 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
Abstract:
We report a new generation of high-performance AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity Si (111) substrates. We map out small- and large-signal device performances against technological parameters such as the gate length and the source–drain contact separation. We report the first large-signal performance for a GaN-on-Si technology offering an output power of 2 W/mm and an associated peak power-added efficiency of 13.8% (peak of 18.5%) at 40 GHz without any field plate. The technology offers measured transconductances of up to 540 mS/mm and cutoff frequencies as high as at a given bias point. These are the highest cutoff frequencies to date for fully passivated AlGaN/GaN HEMTs on silicon substrates. The results confirm GaN-on-Si technology as a promising contender for low-cost millimeter-wave power electronic applications.
Autors: Marti, D.;Tirelli, S.;Alt, A. R.;Roberts, J.;Bolognesi, C. R.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1372 - 1374
Publisher: IEEE
 
» 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
Abstract:
In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties.
Autors: Arcari, M.;Scarpa, G.;Lugli, P.;Tallarida, G.;Huby, N.;Guziewicz, E.;Krajewski, T. A.;Godlewski, M.;
Appeared in: IEEE Transactions on Electron Devices
Publication date: Oct 2012, volume: 59, issue:10, pages: 2762 - 2766
Publisher: IEEE
 
» 20-GSample/s (10 GHz 2 Clocks) Burst-Mode CDR Based on Injection Locking and Space Sampling for Multiaccess Networks
Abstract:
In this paper, we demonstrate a novel 20-GSample/s burst-mode clock and data recovery (BM-CDR) technique for optical multiaccess networks. The BM-CDR incorporates an injection-locking method for clock recovery and a clock phase aligner employing space sampling with two multiphase clocks at 10 GHz and a phase-picking algorithm for automatic clock phase acquisition. The design provides low latency and fast response without requiring a reset signal from the network layer. The BM-CDR achieves a bit error rate while featuring instantaneous (0-bit) phase acquisition for any phase step between successive bursts. We also compare the data with probabilistic theoretical predictions to validate the experimental results.
Autors: Shastri, B. J.;Prucnal, P. R.;Plant, D. V.;
Appeared in: IEEE Photonics Journal
Publication date: Oct 2012, volume: 4, issue:5, pages: 1783 - 1793
Publisher: IEEE
 
» 20-GSample/s (10 GHz 2 Clocks) Burst-Mode CDR Based on Injection Locking and Space Sampling for Multiaccess Networks
Abstract:
In this paper, we demonstrate a novel 20-GSample/s burst-mode clock and data recovery (BM-CDR) technique for optical multiaccess networks. The BM-CDR incorporates an injection-locking method for clock recovery and a clock phase aligner employing space sampling with two multiphase clocks at 10 GHz and a phase-picking algorithm for automatic clock phase acquisition. The design provides low latency and fast response without requiring a reset signal from the network layer. The BM-CDR achieves a bit error rate <; 10-10 while featuring instantaneous (0-bit) phase acquisition for any phase step (±2π rad) between successive bursts. We also compare the data with probabilistic theoretical predictions to validate the experimental results.
Autors: Shastri, B.J.;Prucnal, P.R.;Plant, D.V.;
Appeared in: IEEE Photonics Journal
Publication date: Oct 2012, volume: 4, issue:5, pages: 1783 - 1793
Publisher: IEEE
 
» 2011 IEEE Visualization Contest Winner: Visualizing Unsteady Vortical Behavior of a Centrifugal Pump
Abstract:
In the 2011 IEEE Visualization Contest, the dataset represented a high-resolution simulation of a centrifugal pump operating below optimal speed. The goal was to find suitable visualization techniques to identify regions of rotating stall that impede the pump's effectiveness. The winning entry split analysis of the pump into three parts based on the pump's functional behavior. It then applied local and integration-based methods to communicate the unsteady flow behavior in different regions of the dataset. This research formed the basis for a comparison of common vortex extractors and more recent methods. In particular, integration-based methods (separation measures, accumulated scalar fields, particle path lines, and advection textures) are well suited to capture the complex time-dependent flow behavior. This video (http://youtu.be/oD7QuabY0oU) shows simulations of unsteady flow in a centrifugal pump.
Autors: Otto, Mathias;Kuhn, Alexander;Engelke, Wito;Theisel, Holger;
Appeared in: IEEE Computer Graphics and Applications
Publication date: Oct 2012, volume: 32, issue:5, pages: 12 - 19
Publisher: IEEE
 
» 2012 International Symposium on Computer Architecture Influential Paper Award
Abstract:
This column discusses the winner of the 2012 International Symposium on Computer Architecture Influential Paper Award. It describes, from the point of view of the chair of the committee, what makes the paper influential.
Autors: Torrellas, Josep;
Appeared in: IEEE Micro
Publication date: Oct 2012, volume: 32, issue:5, pages: 4 - 5
Publisher: IEEE
 
» 2012 Student Activities Committee E-mail Addresses
Abstract:
Autors: Causer, C.;
Appeared in: IEEE Potentials
Publication date: Oct 2012, volume: 31, issue:5, pages: 47 - 47
Publisher: IEEE
 
» 220-GHz Solid-State Power Amplifier Modules
Abstract:
Pub DtlThis paper reports on several solid-state power amplifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power 60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining. The output power is further increased by using waveguide power combining with WR-4 waveguide. Results include a single two-way combined module achieving 100 mW of power from 210 to 225 GHz and four-way combining using two two-way combiners to reach 185 mW of output power at 210 GHz. The amplifier MMICs uses sub-50-nm InP HEMT transistors, coplanar waveguide (CPW) technology, and on-chip electromagnetic transitions to waveguide. Finally, preliminary burn-in and initial room-temperature lifetest data is shown.
Autors: Radisic, V.;Leong, K. M. K. H.;Sarkozy, S.;Mei, X.;Yoshida, W.;Liu, P.-H.;Deal, W. R.;Lai, R.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2291 - 2297
Publisher: IEEE
 
» 25th Anniversary Eurosensors XXV
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Appeared in: Sensors and Actuators A: Physical
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 2D phononic crystal sensor with normal incidence of sound
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Appeared in: Sensors and Actuators A: Physical
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 2D/3D Switchable Autostereoscopic Display Based on Polymer-Stabilized Blue-Phase Liquid Crystal Lens
Abstract:
A 2D/3D switchable autostereoscopic display based on a polymer-stabilized blue-phase liquid crystal (PSBPLC) lens is proposed. The operating principle of the PSBPLC lens is analyzed. We have designed a 2-view 2D/3D switchable autostereoscopic display equipped with a PSBPLC lens on a liquid crystal display panel. The 2D/3D switching lens is polarization-independent and performs fast switching because of the employment of the PSBPLC. Experiment results show that the proposed 2D/3D switchable autostereoscopic display achieves good 2D and 3D performance.
Autors: Liang, D.;Luo, J.-Y.;Zhao, W.-X.;Li, D.-H.;Wang, Q.-H.;
Appeared in: Journal of Display Technology
Publication date: Oct 2012, volume: 8, issue:10, pages: 609 - 612
Publisher: IEEE
 
» 3-D Face Recognition Using eLBP-Based Facial Description and Local Feature Hybrid Matching
Abstract:
This paper presents an effective method for 3-D face recognition using a novel geometric facial representation along with a local feature hybrid matching scheme. The proposed facial surface description is based on a set of facial depth maps extracted by multiscale extended Local Binary Patterns (eLBP) and enables an efficient and accurate description of local shape changes; it thus enhances the distinctiveness of smooth and similar facial range images generated by preprocessing steps. The following matching strategy is SIFT-based and performs in a hybrid way that combines local and holistic analysis, robustly associating the keypoints between two facial representations of the same subject. As a result, the proposed approach proves robust to facial expression variations, partial occlusions, and moderate pose changes, and the last property makes our system registration-free for nearly frontal face models. The proposed method was experimented on three public datasets, i.e. FRGC v2.0, Gavab, and Bosphorus. It displays a rank-one recognition rate of 97.6% and a verification rate of 98.4% at a 0.001 FAR on the FRGC v2.0 database without any face alignment. Additional experiments on the Bosphorus dataset further highlight the advantages of the proposed method with regard to expression changes and external partial occlusions. The last experiment carried out on the Gavab database demonstrates that the entire system can also deal with faces under large pose variations and even partially occluded ones, when only aided by a coarse alignment process.
Autors: Di Huang;Ardabilian, M.;Yunhong Wang;Liming Chen;
Appeared in: IEEE Transactions on Information Forensics and Security
Publication date: Oct 2012, volume: 7, issue:5, pages: 1551 - 1565
Publisher: IEEE
 
» 3-D FDTD Computation of Lightning-Induced Voltages on an Overhead Two-Wire Distribution Line
Abstract:
Lightning-induced voltages on a 738-m long overhead two-wire line have been computed using the 3-D finite-difference time-domain (3-D FDTD) method for solving Maxwell's equations. The 3-D FDTD method employed here uses a subgrid model, in which spatial discretization is fine (cell side length is 0.9 m) in the vicinity of overhead wires and coarse (cell side length is 4.5 m) in the rest of the computational domain. The overhead wires having radii of some millimeters are simulated by placing a wire having an equivalent radius of about 0.2 m (≈0.23 × 0.9 m) in the center of an artificial rectangular prism having a cross-sectional area of (2 × 0.9 m) × (2 × 0.9 m) and the modified (relative to air) constitutive parameters: lower electric permittivity and higher magnetic permeability. Induced-voltage peaks computed at different points along the line for the return-stroke speed of 130 m/μs and ground conductivity of 3.5 mS/m agree reasonably well with the corresponding voltage peaks measured in the rocket-triggered lightning experiment of Baker et al., in 1996.
Autors: Sumitani, H.;Takeshima, T.;Baba, Y.;Nagaoka, N.;Ametani, A.;Takami, J.;Okabe, S.;Rakov, V. A.;
Appeared in: IEEE Transactions on Electromagnetic Compatibility
Publication date: Oct 2012, volume: 54, issue:5, pages: 1161 - 1168
Publisher: IEEE
 
» 3-D modeling and analysis of meander-line-coil surface wave EMATs
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Appeared in: Mechatronics
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 30-nm Inverted MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
Abstract:
We report inverted-type MOSHEMTs grown by MOCVD on a Si substrate. InGaAs with an electron density of was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. A 30-nm-channel-length device was successfully demonstrated with a maximum drain current of 1698 mA/mm, a peak transconductance of 1074 mS/mm at , a subthreshold slope of 172 mV/dec at , and a record-low on-resistance of 133 . An effective mobility of 4805 was also extracted, indicating the high-quality metamorphic growth by MOCVD. In addition, the scalability of the inverted MOSHEMT on a Si substrate from 1 down to 30 nm was investigated.
Autors: Zhou, X.;Li, Q.;Tang, C. W.;Lau, K. M.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1384 - 1386
Publisher: IEEE
 
» 300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology
Abstract:
A novel 300-V high-side thin-layer-SOI field pLDMOS adopting field implant (FI) technology and multiple field plates (MFPs) has been developed. Breakdown mechanisms of back gate (BG) punchthrough and avalanche breakdown for highside thin-layer-SOI field pLDMOS are investigated by setting up an analytic model, simulating, and verifying experimentally. Shallow junction depth of p-field achieved by the proposed FI technology attenuates BG punchthrough effect; premature surface avalanche breakdown can be avoided by using MFPs. High-side field pLDMOS with a breakdown voltage (BV) of 340 V is experimentally realized on a 1.5- -thick SOI layer and successfully applied in a 200-V high-voltage switching IC.
Autors: Qiao, M.;Zhou, X.;He, Y.;Wen, H.;Zhao, Y.;Zhang, B.;Li, Z.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1438 - 1440
Publisher: IEEE
 
» 35th ERF: Progress in Rotorcraft Research
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Appeared in: Aerospace Science and Technology
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 3D numerical model of the electrostatic coating process with moving objects using a moving mesh
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Appeared in: Journal of Electrostatics
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 3D thermal-aware floorplanner using a MILP approximation
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Appeared in: Microprocessors and Microsystems
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 400 GHz HBT Differential Amplifier Using Unbalanced Feed Networks
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A terahertz differential eight-stage amplifier fabricated using state-of-the-art 125 nm double-heterojunction bipolar transistors (DHBT) is presented. The four-port unit-cell chain is designed for optimum forward differential gain with no even and odd-mode reverse gains. Unbalanced single-ended feed networks are added to preserve the amplifier gain without inducing oscillations. The proposed feed scheme is validated by a stable amplifier operation in 325-to-450 GHz range with the peak gain of 22 dB at 375 GHz.
Autors: Hacker, J.;Urteaga, M.;Lin, R.;Skalare, A.;Mehdi, I.;Rieh, J.-S.;Kim, M.;
Appeared in: IEEE Microwave and Wireless Components Letters
Publication date: Oct 2012, volume: 22, issue:10, pages: 536 - 538
Publisher: IEEE
 
» 480-GHz in InP/GaAsSb/InP DHBT With New Base Isolation -Airbridge Design
Abstract:
Self-aligned emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an of 310 GHz and an of 480 GHz are reported. Common–emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation -airbridge design which, moreover, significantly reduced the base–collector capacitance .
Autors: Zaknoune, M.;Mairiaux, E.;Roelens, Y.;Waldhoff, N.;Rouchy, U.;Frijlink, P.;Rocchi, M.;Maher, H.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1381 - 1383
Publisher: IEEE
 
» 4G Wireless Networks
Abstract:
4G wireless networks are receiving a lot of attention from researchers, wireless carriers, device manufacturers, and mobile users. This survey compares the original vision with current 4G offerings and considers future prospects.
Autors: Varshney, Upkar;
Appeared in: IT Professional
Publication date: Oct 2012, volume: 14, issue:5, pages: 34 - 39
Publisher: IEEE
 
» 4over6: network layer virtualization for IPv4-IPv6 coexistence
Abstract:
IANA exhausted its IPv4 address space in 2011, and IPv6 is the next generation to replace IPv4. However, the IPv6 transition techniques are still immature and holding back the development of the next-generation Internet. Hence, IPv4-IPv6 coexistence is becoming increasingly imminent. During the coexistence period, the Internet will consist of IPv4-only, IPv6-only, and dual-stack segments. Both the network infrastructure and operations must support IPv4-only, IPv6-only, and dual-stack accordingly. This article develops a 4over6 virtualization architecture that virtualizes IPv4-only networks over IPv6-only networks. This architecture enables two IPv4- only segments to communicate over an IPv6-only network by using an IPv4-in-IPv6 tunnel. The architecture can be examined in different areas such as addressing schema, layer 3 routing, and packet forwarding. The 4over6 virtualization architecture is being standardized in IETF. Various implementations and deployment scenarios are actively discussed in the ISP and vendor communities.
Autors: Cui, Y.;Wu, P.;Xu, M.;Wu, J.;Lee, Y.L.;Durand, A.;Metz, C.;
Appeared in: IEEE Network
Publication date: Oct 2012, volume: 26, issue:5, pages: 44 - 48
Publisher: IEEE
 
» 5-11GHz CMOS PA with 158.941ps group delay and low power using current-reused technique
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Appeared in: AEU - International Journal of Electronics and Communications
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 500-kV EHV Bundle Conductors' Corona Onset Voltage Calculation and Analysis in Corona Cage at Different Altitudes
Abstract:
In order to research an altitude's effect on corona onset voltage of bundle conductors in a corona cage, a calculation model was established, and corresponding test proceeded. The charge simulation method was adopted to calculate space electric-field strength. According to self-sustained discharge criterion in a severe nonuniform electric field, and variation of altitude, the corona onset voltage calculation model of bundle conductors in a corona cage was established. The corona onset voltages of bundle conductors, which were used in the 500-kV extremely high voltage transmission line, were tested at different altitude locations, as Wuhan 19 m, Xining 2261 m, Golmud 2829 m, and Nachitai 3800 m. Corona onset voltages of 4 400/5 and 4 300/25 were obtained. The corona onset voltage curves at different altitude, bundle spacing, and bundle numbers were obtained. The analysis shows that the model can be used to provide accurate values of corona onset voltage for bundled stranded conductors in the corona cage at various altitudes. With bundle spacing from 350 to 500 mm, the corona onset voltage decreases as bundle spacing increases, and the onset voltage increases as the bundle number increases. As altitude increases every 1000 m, the corona onset voltage of bundle conductors decreases by about 8.5%.
Autors: Liu, Y.-P.;You, S.-H.;Lu, F.-C.;Wan, Q.-F.;Bian, X.-M.;Wang, L.-M.;
Appeared in: IEEE Transactions on Power Delivery
Publication date: Oct 2012, volume: 27, issue:4, pages: 2090 - 2097
Publisher: IEEE
 
» 550 Integrated Logic Circuits using 6H-SiC JFETs
Abstract:
This letter reports the design, fabrication, and electrical characteristics of inverter, nand, and nor logic circuits using 6H-silicon carbide (SiC) depletion-mode junction field-effect transistors. All circuits function with high performance at temperatures from 25 to 550 . The core inverter has an outstanding dc characteristic transfer function with a steep slope, including a gain of 20 up to 500 , and a logic threshold that is well centered in the logic swing. nor and nand gates were likewise tested in this temperature range, and dynamic characteristics are presented. This SiC technology provides a platform for applications demanding reliable digital circuits at temperatures higher than 300 , well beyond the capability of silicon technology.
Autors: Soong, C.-W.;Patil, A. C.;Garverick, S. L.;Fu, X.;Mehregany, M.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1369 - 1371
Publisher: IEEE
 
» 56nm pitch Cu Dual-Damascene Interconnects with Self-Aligned Via using Negative-Tone Development lithography-etch-lithography-etch Patterning Scheme
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Appeared in: Microelectronic Engineering
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 5R 2dof parallel kinematic manipulator - A multidisciplinary test case in mechatronics
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Appeared in: Mechatronics
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 6 DOF force and torque sensor for micro-manipulation applications
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Appeared in: Sensors and Actuators A: Physical
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 6-DoF miniature maglev positioning stage for application in haptic micro-manipulation
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Appeared in: Mechatronics
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» 74-fs nanotube-mode-locked fiber laser
Abstract:
We report an erbium-doped, nanotube mode-locked fiber oscillator generating 74 fs pulses with 63 nm spectral width. This all-fiber-based laser is a simple, low-cost source for time-resolved optical spectroscopy, as well as for many applications where high resolution driven by short pulse durations is required.
Autors: Popa, D.;Sun, Z.;Hasan, T.;Cho, W. B.;Wang, F.;Torrisi, F.;Ferrari, A. C.;
Appeared in: Applied Physics Letters
Publication date: Oct 2012, volume: 101, issue:15, pages: 153107 - 153107-4
Publisher: IEEE
 
» Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect
Abstract:
Metal–insulator–metal (MIM) capacitors with laminate as the insulator were explored in this work. Single dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC- ) with a high value of 22.5. By integrating this dielectric with which provides a positive VCC- and a high value of 25.8, the “canceling effect” of VCC- can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminated structure display desirable characteristics in terms of a capacitance density of 14.6 , a low VCC- of 33 , negligible frequency dispersion, and satisfactory leakage current of at 1.5 V. These results also well meet the International Technology Roadmap for Semiconductors requirement set for 2020.
Autors: Chen, L. L.;Wu, Y.-H.;Lin, Y.-B.;Lin, C.-C.;Wu, M.-L.;
Appeared in: IEEE Electron Device Letters
Publication date: Oct 2012, volume: 33, issue:10, pages: 1447 - 1449
Publisher: IEEE
 
» Filtering for Nonlinear Singular Systems
Abstract:
In this paper, we consider the -filtering problem for affine nonlinear singular (or descriptor systems). Two types of filters are discussed, namely, 1) singular and 2) normal, and sufficient conditions for the solvability of the problem in terms of Hamilton–Jacobi–Isaacs equations (HJIEs) are presented. The results are also specialized to linear systems in which case the HJIEs reduce to a system of bilinear-matrix-inequalities (BLMIs) which can still be solved efficiently. Some simple examples are also given to illustrate the approach.
Autors: Aliyu, M. D. S.;Boukas, E. K.;
Appeared in: IEEE Transactions on Circuits and Systems I: Regular Papers
Publication date: Oct 2012, volume: 59, issue:10, pages: 2395 - 2404
Publisher: IEEE
 
» and : Configuration Analysis of Power-Split Hybrid Vehicles With a Single Planetary Gear
Abstract:
The majority of hybrid electric vehicles (HEVs) available on the market are power-split hybrid vehicles with a single planetary gear (PG), including the popular Toyota Prius and Chevy Volt. Although both vehicles use a single PG, they have different configurations with different numbers of operating modes. The Prius has no clutch and has a single operating mode, whereas the Chevy Volt uses three clutches and has four modes. The goal of this paper is to present a thorough analysis of all possible configurations of power-split hybrid powertrain using a single PG. The analysis includes the following steps: 1) search for all possible ways to connect powertrain elements to the PG; 2) identify all potential locations for clutch installations around the PG and examine the feasibility of additional operating modes introduced by the clutch installation; and 3) optimize fuel economy for performance comparison. The proposed analysis shows that a single PG can produce 12 different configurations, each of which can have four feasible operating modes by adding three clutches to the PG. In case studies, we focus on the two configurations that are used in the Prius and Volt to find the impact of adding (or removing) clutches and modes on their fuel economy performance. Our results show that adding one clutch to the Prius transmission (which is named “ ”) can significantly improve fuel economy in urban driving, whereas removing two clutches from the Volt transmission (“ ”) will not significantly affect fuel economy in both urban and highway driving. This multimode configuration analysis can be used to systematically design future power-split HEVs.
Autors: Zhang, X.;Li, C.-T.;Kum, D.;Peng, H.;
Appeared in: IEEE Transactions on Vehicular Technology
Publication date: Oct 2012, volume: 61, issue:8, pages: 3544 - 3552
Publisher: IEEE
 
» Filtering for Nonlinear Singular Systems
Abstract:
In this paper, we consider the -filtering problem for affine nonlinear singular (or descriptor systems). Two types of filters are discussed, namely, 1) singular and 2) normal, and sufficient conditions for the solvability of the problem in terms of Hamilton–Jacobi–Isaacs equations (HJIEs) are presented. The results are also specialized to linear systems in which case the HJIEs reduce to a system of bilinear-matrix-inequalities (BLMIs) which can still be solved efficiently. Some simple examples are also given to illustrate the approach.
Autors: Aliyu, M. D. S.;Boukas, E. K.;
Appeared in: IEEE Transactions on Circuits and Systems I: Regular Papers
Publication date: Oct 2012, volume: 59, issue:10, pages: 2395 - 2404
Publisher: IEEE
 
» ??Viva Conferences?? [President's Column]
Abstract:
Autors: Kolias, N.;
Appeared in: IEEE Microwave Magazine
Publication date: Oct 2012, volume: 13, issue:6, pages: 12 - 14
Publisher: IEEE
 
» A 0.025–0.45 W 60%-Efficiency Inductive-Coupling Power Transceiver With 5-Bit Dual-Frequency Feedforward Control for Non-Contact Memory Cards
Abstract:
A 0.025–0.45 W inductive-coupling power transceiver for non-contact memory applications is presented. To deal with sudden and large load variations and achieve high-efficiency, we propose a power transceiver with 5-bit feedforward control. Knowing that load patterns of a memory card have strong correlation with commands issued by a host, feedforward control is applied to minimize response times. To achieve 5-bit power levels, the proposed transceiver utilizes pulse-density modulation (PDM) and a multi-channel structure. Different operation frequencies are chosen for each channel to maximize power transfer efficiency. To further improve transceiver efficiency and enable high-speed operation, an active rectifier with a fast positive feedback is proposed. The test prototype demonstrates 40%–70% efficiency across all load conditions and 60% efficiency in average, which are over an order of magnitude improvements compared to prior arts.
Autors: Chung, H.;Radecki, A.;Miura, N.;Ishikuro, H.;Kuroda, T.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2496 - 2504
Publisher: IEEE
 
» A 0.38 THz Fully Integrated Transceiver Utilizing a Quadrature Push-Push Harmonic Circuitry in SiGe BiCMOS
Abstract:
A fully integrated transceiver operating at 0.38 terahertz (THz) has been demonstrated in 0.13 m SiGe BiCMOS with 230 GHz. We present a quadrature push-push harmonic circuitry consisting of the clamping pairs driven by balanced quadrature LO signals coupled through the transformers and the Coplanar Stripline (CPS). Harmonic generation of the clamping circuit is analyzed with a clamped sinusoidal model. Several terahertz circuits such as a quadrupler, a THz subharmonic mixer, and an IQ quadrature generator are implemented with the quadrature push-push circuitry to realize a homodyne FMCW radar. Radar functionality is demonstrated with ranging and detection of a target at 10 cm. The measured Equivalent Isotropically Radiated Power (EIRP) of the transmitter is 11 dBm at 0.38 THz and the receiver noise figure (NF) is between 35–38 dB while dissipating a power of 380 mW.
Autors: Park, J.-D.;Kang, S.;Niknejad, A. M.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2344 - 2354
Publisher: IEEE
 
» A 0.7V input output-capacitor-free digitally controlled low-dropout regulator with high current efficiency in 0.35?m CMOS technology
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 1.4-µW 24.9-ppm/°C Current Reference With Process-Insensitive Temperature Compensation in 0.18-µm CMOS
Abstract:
This paper presents a trim-free low-voltage and low-power CMOS current reference which achieves high current stability to temperature variation. In order to achieve process-insensitive temperature compensation, the proposed circuit employs ratio between the process-independent temperature coefficients of resistor and compensation voltage. The proposed current reference is implemented in 0.18-µm CMOS technology and consumes 1.4 µW from a 1-V supply. It achieves temperature coefficient of 24.9 ppm/°C with 0 °C to 100 °C of temperature variation without trimming, which is the lowest among the recently reported CMOS current references.
Autors: Lee, J.;Cho, S.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2527 - 2533
Publisher: IEEE
 
» A 10-bit Resistor-Floating-Resistor-String DAC (RFR-DAC) for High Color-Depth LCD Driver ICs
Abstract:
This work proposes a novel resistor-floating-resistor-string digital-to-analog converter (RFR-DAC) architecture with a 10-bit resolution for liquid crystal display (LCD) driver applications. The proposed architecture improves the linearity of DAC, unifies its channel performance, and achieves a 10-bit resolution with a compact die size smaller than those of the state-of-the-art 10-bit DACs. The proposed RFR-DAC combines a 6-bit RDAC and a 4-bit FR-DAC (floating-resistor-string DAC) to offer unique two-voltage-selection and one-voltage-selection schemes without the need of unity-gain buffers to isolate parallel-connected resistor strings. A stacked floating class-AB control is also devised to bias the last output buffer stage. The 10-bit RFR-DAC prototypes are implemented using 0.35-µm/0.5-µm CMOS technology with the worst DNL/INL = 0.11/0.92 LSB via a two-voltage-selection scheme; and 1.37/1.45 LSB via a one-voltage-selection scheme.
Autors: Lu, C.-W.;Yin, P.-Y.;Hsiao, C.-M.;Chang, M.-C. F.;Lin, Y.-S.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2454 - 2466
Publisher: IEEE
 
» A 10GHz wideband VCO with low KVCO variation
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 12.5Gb/s 6.6mW receiver with analog equalizer and 1-tap DFE
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 128-Channel, 8.9-ps LSB, Column-Parallel Two-Stage TDC Based on Time Difference Amplification for Time-Resolved Imaging
Abstract:
This paper proposes a 128-channel column-parallel two-stage time-to-digital converter (TDC) utilizing a time difference amplifier (TDA) and shows measurement results obtained from an implementation in a 0.35- m CMOS process. The first stage operates as a coarse TDC, the time residue is amplified by a TDA, then converted by the second-stage TDC. As the gain of the time difference amplifier can be adjusted from 8.5 to 20.4, the time resolution of the TDC can be tuned from 21.4 to 8.9 ps. The time resolution variation due to process-voltage-temperature (PVT) effects is 5.8% without calibration when the time resolution is 12.9 ps. We propose a calibration method to compensate LSB changes due to the power supply fluctuation and temperature variation.
Autors: Mandai, S.;Charbon, E.;
Appeared in: IEEE Transactions on Nuclear Science
Publication date: Oct 2012, volume: 59, issue:5, pages: 2463 - 2470
Publisher: IEEE
 
» A 15-Gb/s 0.5-mW/Gbps Two-Tap DFE Receiver With Far-End Crosstalk Cancellation
Abstract:
This paper presents a low-power receiver with two-tap decision feedback equalization (DFE) and novel far-end crosstalk (FEXT) cancellation capability, implemented in a 45-nm SOI CMOS process. The receiver employs a half-rate speculative DFE architecture to allow for the use of low-power front-end circuitry and CMOS clock buffers. In the proposed architecture, a switched-capacitor sample-hold at the front-end is employed to perform DFE tap summation. This technique is generalized to implement taps of equalization. The receiver compensates the effect of crosstalk without making a decision on the received aggressor signal. Due to the low-power nature of the switched-capacitor front-end, the crosstalk cancellation is possible with only 33 power overhead. The receiver was tested over channels with different levels of loss and coupling. The signaling rate with was significantly increased with the use of DFE and crosstalk cancellation scheme for highly coupled and lossy PCB traces. The DFE receiver equalizes 15-Gb/s data over a channel with more than 14-dB loss while consuming about 7.5 mW from a 1.2-V supply. At lower data rates it equalizes channels with over 21-dB loss.
Autors: Nazari, M. H.;Emami-Neyestanak, A.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2420 - 2432
Publisher: IEEE
 
» A 15fJ/conversion-step 8-bit 50MS/s asynchronous SAR ADC with efficient charge recycling technique
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 160-GHz Subharmonic Transmitter and Receiver Chipset in an SiGe HBT Technology
Abstract:
A monolithically integrated 160-GHz transmitter and receiver chipset with in-phase/quadrature baseband inputs and outputs and on-chip local oscillator (LO) generation has been implemented in a 0.25- silicon–germanium heterojunction bipolar transistor technology. The chipset features a three-stage differential power amplifier, a low-noise amplifier, up- and down-conversion subharmonic quadrature mixers, and an 80-GHz voltage-controlled oscillator equipped with a 1/16 frequency prescaler for frequency locking by an external phase-locked loop. To investigate the behavior of the Gilbert-cell-based subharmonic mixer operated close to , the correlation between LO phases and conversion gain is studied. The conclusion suggests that the maximum conversion gain can be obtained with certain LO phases at millimeter-wave frequencies. Over the 150–168-GHz bandwidth, the transmitter delivers an output power of more than 8 dBm with a maximum 10.6-dBm output power at 156 GHz. The receiver provides a noise figure lower than 9 dB and more than 25 dB of conversion gain at 150–162 GHz, including the losses of an auxiliary input balun. The transmitter and receiver chips consume 610 and 490 mW, respectively.
Autors: Zhao, Y.;Ojefors, E.;Aufinger, K.;Meister, T. F.;Pfeiffer, U. R.;
Appeared in: IEEE Transactions on Microwave Theory and Techniques
Publication date: Oct 2012, volume: 60, issue:10, pages: 3286 - 3299
Publisher: IEEE
 
» A 2-GHz Highly Linear Efficient Dual-Mode BiCMOS Power Amplifier Using a Reconfigurable Matching Network
Abstract:
A highly linear, efficient, two-stage power amplifier for high-data-rate wireless applications is presented. The linearity is greatly improved by adding an auxiliary amplifier to the main bipolar transistor amplifier in a feed-forward approach to cancel out the nonlinearity terms. The efficiency enhancement is achieved using a switchable biasing and a reconfigurable output-matching network based on the available input power which is monitored by an on-chip envelope detector. The PA is fabricated using 0.25- m SiGe:C BiCMOS technology and works at 2 GHz with a supply voltage of 2.5 V. The experimental results show a gain of 13 dB and a maximum output power of 23 dBm with a PAE of 38%. The 1-dB output power compression point is 21 dBm with a 32% PAE. The 6-dB power back-off PAE is 23%. The and terms are 41 and 44 dB below the fundamental tone for the 21-dBm output power, respectively. The EVM has been measured to be 30.7 dB at 15-dBm average output power using IEEE 802.16e standard WiMAX 64QAM modulated signal. By employing the linearization technique, EVM and ACLR are improved by 4.5 and 5 dB, respectively, for a WiMAX 64QAM 10-MHz signal bandwidth at 14-dBm average output power.
Autors: Hedayati, H.;Mobarak, M.;Varin, G.;Meunier, P.;Gamand, P.;Sanchez-Sinencio, E.;Entesari, K.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2385 - 2404
Publisher: IEEE
 
» A 2.4 GHz Fractional-N Frequency Synthesizer With High-OSR ΔΣ Modulator and Nested PLL
Abstract:
This paper presents a nested-PLL architecture for a low-noise wide-bandwidth fractional-N frequency synthesizer. In order to reduce the quantization noise, operating frequency of ΔΣ modulator (DSM) is increased by using an intermediate output of feedback divider. A PLL which serves as an anti-alias filter is added to suppress noise aliasing caused by the divider. Prototype implemented in a 0.13 µm CMOS using ring VCOs achieves 26.3 dB of quantization noise suppression while consuming 15.2 mW and occupying 0.17 mm .
Autors: Park, P.;Park, D.;Cho, S.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2433 - 2443
Publisher: IEEE
 
» A 2.4-GHz, 27-dBm Asymmetric Multilevel Outphasing Power Amplifier in 65-nm CMOS
Abstract:
We present a 2.4-GHz asymmetric multilevel outphasing (AMO) power amplifier (PA) with class-E branch amplifiers and discrete supply modulators integrated in a 65-nm CMOS process. AMO PAs achieve improved modulation bandwidth and efficiency over envelope tracking (ET) PAs by replacing the continuous supply modulator with a discrete supply modulator implemented with a fast digital switching network. Outphasing modulation is used to provide the required fine output envelope control. The AMO PA delivers 27.7-dBm peak output power with 45% system efficiency at 2.4 GHz. For a 20-MHz WLAN OFDM signal with 7.5-dB PAPR, the AMO PA achieves a drain efficiency of 31.9% and a system efficiency of 27.6% with an EVM of 2.7% rms.
Autors: Godoy, P. A.;Chung, S.;Barton, T. W.;Perreault, D. J.;Dawson, J. L.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2372 - 2384
Publisher: IEEE
 
» A 20Gb/s triple-mode (PAM-2, PAM-4, and duobinary) transmitter
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 245 GHz LNA in SiGe Technology
Abstract:
A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of NF of the LNA at 245 GHz was measured by the -factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.
Autors: Schmalz, K.;Borngraber, J.;Mao, Y.;Rucker, H.;Weber, R.;
Appeared in: IEEE Microwave and Wireless Components Letters
Publication date: Oct 2012, volume: 22, issue:10, pages: 533 - 535
Publisher: IEEE
 
» A 2T1C Embedded DRAM Macro With No Boosted Supplies Featuring a 7T SRAM Based Repair and a Cell Storage Monitor
Abstract:
A truly logic-compatible gain cell eDRAM macro with no boosted supplies is presented. A 2T1C gain cell implemented only with regular thin oxide devices consists of an asymmetric 2T cell and a coupling PMOS capacitor. The PMOS capacitor ensures proper operation even without a boosted supply by utilizing a beneficial coupling for read and a preferential boosting for write. A repair scheme based on a single-ended 7T SRAM has features such as a local differential write and shared control with the main 2T1C array. A storage voltage monitor is proposed to track the retention characteristics of a gain cell eDRAM under PVT variations and to adjust its refresh rate adaptively. A 128 kb eDRAM test chip implemented in a 65 nm Low-Power (LP) process operates at a random access frequency of 714 MHz with a static power dissipation of 161.8 µW per Mb for a 500 µs refresh rate at 1.1 V and 85°C.
Autors: Chun, K. C.;Zhang, W.;Jain, P.;Kim, C. H.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2517 - 2526
Publisher: IEEE
 
» A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling
Abstract:
A highly accurate method of building a large-signal modeling approach considering dispersive effect of field-effect transistors is presented in this paper. The non-quasi-static effect of the transistor is described through high-order constitutive nonlinear current sources and charge sources. The extraction and building of these sources are executed by polynomial regression, which is fast and determined by unique values. The sources are built by 3-D tables, where the added dimension is a variable integration path used to account for the dispersion effect. The performance up to the millimeter-wave frequency of the model is satisfied. The validity of the proposed technology-independent approach has been verified by both GaAs and GaN devices.
Autors: Long, Y.;Guo, Y.-X.;Zhong, Z.;
Appeared in: IEEE Transactions on Microwave Theory and Techniques
Publication date: Oct 2012, volume: 60, issue:10, pages: 3088 - 3095
Publisher: IEEE
 
» A 3.2ppm/C curvature-compensated bandgap reference with wide supply voltage range
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 4 : 1 Transmission-Line Impedance Transformer for Broadband Superconducting Circuits
Abstract:
We present a 4 : 1 superconducting transmission-line impedance transformer for cryogenic applications. The device transforms 25 in the coplanar waveguide to 6.25 in the microstrip and is designed to operate at 20 mK. Calibrated measurements in a dilution refrigerator demonstrate a 3 dB bandwidth from 1.6 to 13 GHz. In a modified Ruthroff design, a small capacitor is integrated at the input as a direct-current block, making it suitable for biasing and matching to low-impedance active circuits, such as superconducting quantum interference device (SQUID) amplifiers.
Autors: Ranzani, L.;Spietz, L.;Popovic, Z.;Aumentado, J.;
Appeared in: IEEE Transactions on Applied Superconductivity
Publication date: Oct 2012, volume: 22, issue:5, pages: 1500606 - 1500606
Publisher: IEEE
 
» A 5MSps 13.25?W 8-bit SAR ADC with single-ended or differential input
Abstract:


Autors:
Appeared in: Microelectronics Journal
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A 65 GHz LNA/Phase Shifter With 4.3 dB NF Using 45 nm CMOS SOI
Abstract:
This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input of (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.
Autors: Uzunkol, M.;Rebeiz, G. M.;
Appeared in: IEEE Microwave and Wireless Components Letters
Publication date: Oct 2012, volume: 22, issue:10, pages: 530 - 532
Publisher: IEEE
 
» A 670 GHz gyrotron with record power and efficiency
Abstract:
A 670 GHz gyrotron with record power and efficiency has been developed in joint experiments of the Institute of Applied Physics, Russian Academy of Sciences (Nizhny Novgord, Russia), and the University of Maryland (USA) teams. The magnetic field of 27–28 T required for operation at the 670 GHz at the fundamental cyclotron resonance is produced by a pulsed solenoid. The pulse duration of the magnetic field is several milliseconds. A gyrotron is driven by a 70 kV, 15 A electron beam, so the beam power is on the order of 1 MW in 10–20 ms pulses. The ratio of the orbital to axial electron velocity components is in the range of 1.2–1.3. The gyrotron is designed to operate in the TE31,8-mode. Operation in a so high-order mode results in relatively low ohmic losses (less than 10% of the radiated power). Achieved power of the outgoing radiation (210 kW) and corresponding efficiency (about 20%) represent record numbers for high-power sources of sub-THz radiation.
Autors: Glyavin, M. Yu.;Luchinin, A. G.;Nusinovich, G. S.;Rodgers, J.;Kashyn, D. G.;Romero-Talamas, C. A.;Pu, R.;
Appeared in: Applied Physics Letters
Publication date: Oct 2012, volume: 101, issue:15, pages: 153503 - 153503-4
Publisher: IEEE
 
» A 7–21 GHz Dual-Polarized Planar Ultrawideband Modular Antenna (PUMA) Array
Abstract:
The design, fabrication, and measurement of a 16 16 dual-polarized planar ultrawideband modular antenna (PUMA) array operating over 7–21 GHz (3:1 bandwidth) are presented. The array is comprised of tightly coupled dipoles printed on a grounded dielectric substrate and are excited by an unbalanced feeding scheme that eliminates external wideband baluns and feed organizers. The array can be assembled modularly, where each low-profile, fully planar, low-cost tile is fabricated using standard multilayer microwave PCB techniques. A unique solderless, modular interconnect mates the array to a dilation fixture that facilitates measurements using standard surface-mount assembly (SMA) connectors and terminations. After presenting the most critical design trends, simulation results of the final array in infinite, infinite finite, and finite finite models are compared with measurements. This prototype array exhibits a measured active and close to ideal gain at broadside, and with low cross-polarization out to in all planes, showing close agreement with simulations.
Autors: Holland, S. S.;Schaubert, D. H.;Vouvakis, M. N.;
Appeared in: IEEE Transactions on Antennas and Propagation
Publication date: Oct 2012, volume: 60, issue:10, pages: 4589 - 4600
Publisher: IEEE
 
» A Band-Notched UWB Monopole Antenna With High Notch-Band-Edge Selectivity
Abstract:
In this paper, a novel band-notched ultrawideband (UWB) monopole antenna with high notch-band-edge selectivity is proposed and demonstrated. The proposed antenna consists of a radiation patch and an embedded second-order bandstop filter. Using the same substrate area as a fundamental UWB antenna, a bandstop filter composed of a nonuniform short-circuited stub and coupled open-/short-circuited stub resonators, is designed into the fundamental antenna. A detail design procedure for the proposed antenna with a second-order maximally flat bandstop filter at 5.5 GHz is presented. As compared to the fundamental antenna, the proposed UWB antenna provides good notch-band suppression from 5.15 to 5.95 GHz, in which the normalized total radiated powers in the notch band are lower than 12 dB. Also, the proposed structure provides high band-edge selectivity and flat return loss in the notch band. The measured results, including the return loss and total radiated power, agree with the designed ones.
Autors: Chuang, C.-T.;Lin, T.-J.;Chung, S.-J.;
Appeared in: IEEE Transactions on Antennas and Propagation
Publication date: Oct 2012, volume: 60, issue:10, pages: 4492 - 4499
Publisher: IEEE
 
» A band-pass filter approach within molecular dynamics for the prediction of intrinsic quality factors of nanoresonators
Abstract:
The temperature and frequency dependence of the flexural mode quality factors (Q) of doubly clamped single wall carbon nanotube resonators are calculated using classical molecular dynamics simulations. The validity of the various methods available in the literature for calculating Q based on the temporal response of the system during ring-down is discussed and the discrepancies associated with the methods are explained. A new approach based on band-pass filtering is proposed for calculating Q, which reveals classical temperature dependence (Q ∼ T-1) in contrast to the previously reported results (Q ∼ T, 0 &#60; β &#60; 1). It is shown that the Q estimated from the temporal response is in good agreement with the Q estimated from frequency response. This work also demonstrates that the proposed method is particularly advantageous when multiple modes are simultaneously excited within the linear regime.
Autors: Vallabhaneni, Ajit K.;Ruan, Xiulin;Rhoads, Jeffrey F.;Murthy, Jayathi;
Appeared in: Journal of Applied Physics
Publication date: Oct 2012, volume: 112, issue:7, pages: 074301 - 074301-6
Publisher: IEEE
 
» A behaviour-based control architecture for heterogeneous modular, multi-configurable, chained micro-robots
Abstract:


Autors:

Highlights

Appeared in: Robotics and Autonomous Systems
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A benchmark test system for testing frequency dependent network equivalents for electromagnetic simulations
Abstract:


Autors:
Appeared in: International Journal of Electrical Power & Energy Systems
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A BiCMOS W-Band 2×2 Focal-Plane Array With On-Chip Antenna
Abstract:
This paper presents a W-band 2 2 focal-plane array (FPA) for passive millimeter-wave imaging in a standard 0.18 SiGe BiCMOS process ( ). The FPA incorporates four Dicke-type receivers representing four imaging pixels. Each receiver employs the direct-conversion architecture consisting of an on-chip slot folded dipole antenna, an SPDT switch, a low noise amplifier, a single-balanced mixer, an injection-locked frequency tripler (ILFT), an IF variable gain amplifier, a power detector, an active bandpass filter and a synchronous demodulator. The LO signal is generated by a shared Ka-band PLL and distributed symmetrically to four local ILFTs. The measured LO phase noise is at 1 MHz offset from the 96 GHz carrier. This imaging receiver (without antenna) achieves a measured average responsivity and noise equivalent power of 285 MV/W and 8.1 , respectively, across the 86–106 GHz bandwidth, which results a calculated NETD of 0.48 K with a 30 ms integration time. The system NETD increases to 3 K with on-chip antenna due to its low efficiency at W-band. MMW images have been generated in transmission mode. This work demonstrates the highest integration level of any silicon-based systems in the 94 GHz imaging band.
Autors: Chen, Z.;Wang, C.-C.;Yao, H.-C.;Heydari, P.;
Appeared in: IEEE Journal of Solid-State Circuits
Publication date: Oct 2012, volume: 47, issue:10, pages: 2355 - 2371
Publisher: IEEE
 
» A bio-inspired multi degree of freedom actuator based on a novel cylindrical ionic polymer-metal composite material
Abstract:


Autors:

Highlights

Appeared in: Robotics and Autonomous Systems
Publication date: Oct 2012
Publisher: Elsevier B.V.
 
» A biologically motivated approach towards modular and robust low-level sensor fusion for application in agricultural machinery design
Abstract:


Autors:

Highlights

Appeared in: Computers and Electronics in Agriculture
Publication date: Oct 2012
Publisher: Elsevier B.V.
 

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