HSCH-5512 part details
PartHSCH-5512
CategoryRF/IF => RF Die Products
TitleDiode Schottky Pair 500v Beam Ld
CompanyBroadcom Limited
DatasheetDownload HSCH-5512 datasheet
 
Specifications 
Series-
FunctionDiode

HSCH-5512 photo

 

Features, Applications
HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors
Description

These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.

Features

· Monolithic Pair: Closely Matched Electrical Parameters· Low Capacitance: 0.1 pF Maximum at 0 Volts· Low Noise Figure: Typical at 26 GHz· Rugged Construction: 4 Grams Minimum Lead Pull· Platinum Tri-Metal System: High Temperature Stability· Polyimide Scratch Protection· Silicon Nitride Passivation: Stable, Reliable Performance

Applications

The beam lead diode is ideally suited for use in stripline or microstrip or coplanar waveguide circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through Kband. These dual beam leads are intended for use in balanced mixers and in even harmonic anti-parallel pair mixers. By using several of these devices in the proper configuration it is easy to assemble bridge quads, star quads, and ring quads for Class I, II, or III type double balanced mixers.

Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, "The Handling and Bonding of Beam Lead Devices Made Easy," or Application Note 993, "Beam Lead Device Bonding to Soft Substrates."

Maximum Ratings (for Each Diode) Pulse Power Incident 1 W Pulse Width = 1 µs, 0.001 CW Power Dissipation 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR ­ Operating Temperature +175 °C TSTG ­ Storage Temperature to +200°C Minimum Lead Strength.4 grams pull on any lead Diode Mounting Temperature. 350°C for 10 sec. max.

These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.
Note: 1. Standard Hi-Rel program available on HSCH-5531. Others are available upon request.
Tangential Sensitivity Voltage Sensitivity Video Resistance
Parameter Tangential Sensitivity Voltage Sensitivity Video Resistance
20 µA Bias, Zero Bias, Pin = -40 dBm, 100 K, Video Bandwidth = 2 MHz = 10 GHz
Zero Bias, Zero Bias, Pin = -30 dBm, 10 M, Video Bandwidth = 2 MHz = 10 GHz
FORWARD CURRENT (mA) FORWARD CURRENT (mA)
Figure 1. Typical forward characteristics for medium barrier beam lead diodes. HSCH-5512.
Figure 2. Typical forward characteristics for low barrier beam lead diodes. HSCH-5531.

Others parts numbering
HSCH-5531: Diode Schottky Pair 375v Beam Ld
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