AMMC-6231-W10 part details
CategoryRF/IF => RF Die Products
TitleIc Mmic Lo Noise Higain 16-32ghz
CompanyBroadcom Limited
DatasheetDownload AMMC-6231-W10 datasheet


Features, Applications

Chip Size: x 31.5 mils) Chip Size Tolerance: µm 0.4 mils) Chip Thickness: ± 0.4 mils) RF Pad Dimensions: x 3.54 mils) DC Pad Dimensions: x 3.94 mils)

Description Avago Technologies is a high gain, low-noise amplifier that operates from 16 GHz to 32 GHz. This LNA provides a wide-band solution for system design since it covers several bands, thus, reduces part inventory. The device has input / output match to 50 Ohm, is unconditionally stable and can be used as either primary or sub-sequential low noise gain stage. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete-FET) amplifiers, the is a cost-effective alternative in the - 32 GHz communications receivers. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. It is fabricated in a PHEMT process to provide exceptional noise and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas.


· Wide frequency range: - 32 GHz· High gain: 22 dB· Low 50 Noise Figure: 2.6 dB· 50 Input and Output Match· Flat Gain Response· Single 3V Supply Bias


· Microwave Radio systems· Satellite VSAT, DBS Up/Down Link· LMDS & Pt-Pt mmW Long Haul· Broadband Wireless Access (including 802.16 and

Note: 1. Operation in excess of any one of these conditions may result in

Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding to be worn at all times when handling these devices. For more details, refer to Avago Technologies Application Note A004R: Electrostatic Discharge Damage and Control. ESD Machine Model (Class A) ESD Human Body Model (Class 0)

Parameters and Test Conditions Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V) Thermal Resistance[2] (Backside temperature, = 25°C)

Notes: 1. Ambient operational temperature TA=25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (qch-b) 26°C/W at Tchannel (Tc) 34°C as measured using infrared microscopy. Thermal Resistance at

backside temperature (Tb) = 25°C calculated from measured data. 3. Small/Large -signal data measured in wafer form 4. 100% on-wafer RF test is done at frequency =18, 26, and 31 GHz. 5. Specifications are derived from measurements a 50 test environment. Aspects of the amplifier performance may be improved over a

more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching. 6. As derived from measured s-parameters

Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several production lots.

AMMC-6231 Typical Performances (TA =3.0 V, Itotal = 60 mA, Zin = Zout = 50 unless otherwise stated)

NOTE: These measurements are a 50 test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching

Figure 5. Typical Noise Figure into a 50 load.
Figure 9. Typical Input Return Loss Over Temperature

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