|Category||RF/IF => RF Die Products|
|Title||Ic Mmic Mixer W/lo Amp&mult Gaas|
|Datasheet||Download AMMC-3040-W10 datasheet|
Chip Size: x 29.9 mils) Chip Size Tolerance: µm 0.4 mils) Chip Thickness: ± 0.4 mils) Pad Dimensions: ± 0.4 mils)Description
The is a broadband Double-Balanced Mixer (DBM) with an integrated high-gain LO amplifier. This MMIC can be used as either an up converter or down converter in microwave or millimeter wave applications. If desired, the LO amplifier can be biased to function as a frequency multiplier to enable second harmonic mixing of the LO input. The mixer section ofthe AMMC-3040 is fabricated using a suspended metal system to create a unique, broadside-coupled balun structure (patent pending) to achieve exceptional bandwidth. The MMIC provides repeatable conversion loss without tuning, making it highly suitable for automated assembly processes. For improved reliability and moisture protection, the die is passivated at the active areas.
Positive Drain Voltage Gate Voltage Total Drain Current Operating Channel Temp. Operating Backside Temp. Storage Case Temp. Maximum Assembly Temp. (60 sec max)
Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device.Features
· High IIP3: +23 dBm· Wide bandwidth· RF: 18-36 GHz· LO: 18-36 GHz· IF: DC-3 GHz· Fundamental or subharmonic mixing· Up or down converter· Conversion loss: 9.5 dB· P1dB: +17 dBm· Low LO drive power: +2 dBm· Usable to 42 GHzApplications
Note: These devices are ESD sensitive. The following precautions are strongly recommended: Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding to be worn at all times when handling these devices.Total Drain Supply Current for Stages 2, 3 and 4 (Vdd 3.5 V, Vgg -0.5 V)
tance at backside temperature (Tb) 25 °C calculated from measured data.
25°C, IF Output = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
Input Power 1 dB Conversion Loss Compression, Down Conversion
Notes: 1. 100% on-wafer RF testing is done at RF frequency 18, 22, and 32 GHz. 2. IF Input = 2 GHz, RF Input Power = -20 dBm, RF freq LO + IF. 3. Does not include LO amplifier gain of ~20 dB. = 2 MHz, RF Input Power = -5 dBm.= 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
CONVERSION LOSS (dB) CONVERSION LOSS (dB)
Figure 2. Conversion loss, down conversion. = 250 mA, LO freq. IF
Figure 5. Conversion loss vs. LO input power, up conversion. = 250 mA, LO freq + IF
Figure 7. Input power 1 dB conversion loss compression, down conversion. = 250 mA, LO freq - IF
Figure 4. Conversion loss, down conversion. = 150 mA, LO freq - IF
Figure 6. Conversion loss vs. LO input power, down conversion. = 250 mA, LO freq - IF
Figure 8. Input power 1 dB conversion loss compression, up conversion. = 250 mA, LO freq + IF
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