MADR-009269-000DIE part details
PartMADR-009269-000DIE
CategoryRF/IF => RF Die Products
TitleFet And Pin Driver Single
CompanyM/A-Com Technology Solutions
DatasheetDownload MADR-009269-000DIE datasheet
 
Specifications 
Series-
FunctionDriver

MADR-009269-000DIE photo

 

Features, Applications
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Features

High Voltage CMOS Technology Complementary Outputs Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Plastic SOIC-8 Package 100% Matte Tin Plating over Copper Halogen-Free "Green" Mold Compound RoHS* Compliant

Description

The is a single channel CMOS driver used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally 2 V (relative to GND) to optimize the intermodulation products of FET control devices at low frequencies. For driving PIN diode circuits, the outputs are nominally switched between -5 V.

1. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
Parameter Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage
Additional Supply Current (per TTL Input pin)

IOH -1 mA IOL +1 mA VIN = VCC or GND, VEE = min, VCC = max, VOPT = min or max VCC 5.0 V, VEE -5.0 V, VOPT 5.0 V, VOUT -4.9 V

TPLH TPHL TTLH TTHL Tskew PRF (max)

Propagation Delay Propagation Delay Output Transition Time (Rising Edge) Output Transition Time (Falling Edge)

Please observe the following precautions to avoid damage:

Silicon Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.

4. Unused logic inputs must be tied to either GND or VCC. 5. MACOM recommends that VCC be powered on before VEE, and powered off after VEE. 0.01 F decoupling capacitors are required on the power supply lines. 7. VOPT is grounded in most cases when FETs are driven. To improve the intermodulation performance and the 1 dB compression point of

GaAs control devices at low frequencies, VOPT can be increased to between 1 and 2 V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current that is on the GaAs MMICs will increase when positive controls are applied. 8. When this driver is used to drive PIN diodes, VOPT is often set +5 V, with VEE set -5 V.

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