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Displays - Infrared, UV

 
QBLP670-IR1: Led Ir 3528 940nm Wlp Plcc2
These ultra bright reflector type PLCC2 LEDs have a height profile of 1.90mm. Combination of high brightness output and robust package, these LEDs are ideal for architecture lighting, status indication,
EAILP05RDGA0: Emitter Ir 855nm 100ma Radial
Features High reliability High radiant intensity Peak wavelength p=850nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. Everlight Americas
TSHF4410: Emitter Ir 890nm 100ma Radial
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero DESCRIPTION is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
QBLP653-IR3: Led Ir Chip 850nm Wlp 20ma 1208
QT-Brightek Chip LED Series 1208 IR LED with Dome Lens This reversed mount light weight bright 1208 LEDs have a height profile of 2.5mm. With narrow viewing angle, LED produces high intensity output. This
MTE325H21-UV: Emitter Uv 325nm 40ma To-46
The MTE-H21 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy a TO-46 hermetically sealed package with a special UV glass lens for optimum life
ASDL-4860-C22: Emitter Ir 850nm 500ma Smds
Tape & Reel (TR) ; IR ; 500mA ; 40mW/sr @ 500mA ; 850nm
MTE325F13-UV: Emitter Uv 325nm 40ma To-39-2
The MTE-F13 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy a TO-39 hermetically sealed package with a special UV glass lens for optimum life
IR204/H60: Emitter Ir 940nm 100ma Radial
Features High reliability High radiant intensity Peak wavelength p=940nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. EVERLIGHT's Infrared
L-53F3C: Infrared Emitter, 20 Ma, 20 °, 1.6 V, -40 °c
Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. F3 Made with Gallium Arsenide Infrared Emitting diodes. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance
MTE5066M3A-UR: Emitter Visible 660nm 30ma Rad
The 660nm visible emitter series is designed for applications requiring high output and precise optical / mechanical axis alignment. Custom package solutions and sorting are available. FEATURES > Ceramic
PDI-E821: Emitter Ir 850nm 100ma To-46
High-Speed GaAIAs Infrared Point Source Emitter TO-46 HERMETIC CAN PACKAGE 80O HALF INTENSITY BEAM ANGLE FEATURES nm, high speed point source emitter. The emitting Wide emission anglemetal cathode forms
TSOP32138: Infrared Receiver, Remote Control, 38 Khz, 45m, 45 , 2.5 V, 5.5 V, 350 A
38kHz ; 45m ; 45° ; 2.5V ; 5.5V ; 350µA ; Operating
MTE9460C2: Emitter Ir 950nm 100ma Radial
The MTE9460C2 consists a 950nm high output infrared die in a water-clear 3mm flat top plastic molded package. Custom package solutions and sorting are available. FEATURES > High Output Power > High Reliability
MTE310H21-UV: Emitter Uv 310nm 40ma To-46
The MTE-H21 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy a TO-46 hermetically sealed package with a special UV glass lens for optimum life
SFH 4271-Z: Emitter Ir 880nm 100ma 2-lcc
Infrared Emitter IR-Lumineszenzdiode Version 1.0 (not for new design) Features:· Replacement: SFH4257· Black coloured TOPLED-package· Improved imaging characteristics due to absorption of side emission·
SIR-320ST3FF: Emitter Ir 940nm 75ma T-1
Infrared light emitting diode, top view type The is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors.
MT3650W3-UV: Emitter Uv 365nm 15ma To-5
The 365nm UV emitter is specifically designed for applications requiring high power output and accuracy in a flat lensed metal package. Custom package solutions and sorting are available. FEATURES > High
MTE5010-199-IR: Swir Emitter 1050nm 1206 Smd
- Size 1206: 3.2 (L) x 1.6 (W) x 1.2 (H) mm - Circuit substrate: glass laminated epoxy - Devices are RoHS conform - Lead free solderable, soldering pads: gold plated - Taped 8 mm blister tape, cathode
UV3TZ-390-15: Emitter Uv 390nm 30ma Radial
Tight Tolerance Ultraviolet LED Lamp TZ Series (T1, 3mm Round RoHS Compliant Low Power Consumption Low Current Requirement High Efficiency Tight Tolerance of Wavelengths Equipped with a Protective Zener

UV3TZ-390-30
UV3TZ-395-15: Emitter Uv 395nm 30ma Radial
UV3TZ-395-30
UV3TZ-400-15: Emitter Uv 400nm 30ma Radial
UV3TZ-400-30
UV3TZ-405-15: Emitter Uv 405nm 30ma Radial
UV3TZ-405-30
SFH 4655-Z: Emitter Ir 850nm 100ma Smd
Narrow beam LED in MIDLED package (850 nm) Engwinklige LED im MIDLED-Gehäuse (850 nm) Version 1.3 Features:· High Power Infrared LED (60 mW)· Short switching times· Narrow halfangle 15°)· Low profile component·
TSSP4038: Infrared Receiver, Light Barrier, 38 Khz, 25m, 45 , 2.5 V, 5.5 V, 700 A
38kHz ; 25m ; 45° ; 2.5V ; 5.5V ; 700µA ; Operating
KP-1608SF4C: Infrared Emitter, 20 Ma, 120 °, 1.6 V, -40 °c
Features z 1.6mmX0.8mm SMT LED, 1.1mm thickness. z Mechanically and spectrally matched to the phototransistor. z Package: 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. SF4
GL480E00000F: Infrared Emitter, 20 Ma, 13 °, 1.2 V, -25 °c
Features 1. Side view emission type 2. Plastic mold with resin lens 3. Medium directivity angle ±13° TYP.) Peak emission wavelength: 950 nm TYP. 4. Radiant flux 0.7 mW MIN. 5. Lead free and RoHS directive
PDI-E802: Emitter Ir 880nm 100ma To-46
Bulk ; IR ; 100mA ; 880nm ; 1.5V ; Top View ; Operating
SME2470-001: Emitter Ir 880nm 75ma Smd
Infrared Components Ceramic Discrete Surface Mount Emitters and Detectors FEATURES· Small package size· Glass lensed optics for efficient optical coupling· Upright or inverted mounting flexible layout

SME2470-011
SME2470-021: Infrared Emitter, 50 Ma, 800 Ns, 700 Ns, 5 V, -55 °c
TSOP4136: Infrared Receiver, 36 Khz, 45m, 45 °, 4.5 V, 5.5 V, 950 µa
36kHz ; 45m ; 45° ; 4.5V ; 5.5V ; 950µA ; Operating
IR383: Emitter Ir 940nm 100ma Radial
Features High reliability High radiant intensity Peak wavelength p=940nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. EVERLIGHT's Infrared
TSOP2130: Infrared Receiver, Remote Control, 30 Khz, 45m, 45 °, 2.7 V, 5.5 V, 950 µa
MECHANICAL DATA Pinning for 1 = OUT, 2 = GND, = VS Pinning for 1 = OUT, 2 = VS, 3 = GND FEATURES These products are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier

TSOP2133: Infrared Receiver, Remote Control, 33 Khz, 45m, 45 °, 2.7 V, 5.5 V, 950 µa
TSOP2140: Infrared Receiver, Remote Control, 40 Khz, 45m, 45 °, 2.7 V, 5.5 V, 950 µa
TSOP4140
TSOP4156: Infrared Receiver, Remote Control, 56 Khz, 45m, 45 °, 2.7 V, 5.5 V, 950 µa
HIM602H: Infrared Receiver, Remote Control, 38 Khz, 16m, 50 °, 4.5 V, 5.5 V, 3 Ma
Wide reception angle Long reception distance Good EMI protection Side and top view devices Peak Wavelength Half intensity angle (Horizontal) Half intensity angle (Vertical) BPF Centre Frequency HERO ELECTRONICS

HIM602V.
HIR30-01C/S16: Emitter Ir 850nm 100ma 4-dip
Technical Data Sheet High Power Infrared LED Features High reliability High radiant intensity Peak wavelength p=850nm Low forward voltage Pb free The product itself will remain within RoHS compliant version. EVERLIGHT'S
LNA2W01L: Emitter Ir 950nm 50ma Axial
IR ; 50mA ; 3mW/sr @ 50mA ; 950nm ; 1.25V
MTMD7885T38: Emitter Ir Multi-nm 100ma To-5-8
The is a multi-chip emitter designed for applications requiring various emission sources in a small, densely packaged area. These devices can be custom designed for specific wavelengths and outputs. FEATURES >
MTPS8085P: Emitter Ir 850nm 100ma To-18
The 850nm Point Source Series is designed for applications requiring high accuracy and precision as well as uniform spectral emission. Custom package solutions and sorting are available. FEATURES > Hermetically
SFH 4720: Emitter Ir Smd
OD-880FHT: Emitter Ir 880nm 100ma To-46
FEATURES· Extended operating temperature range· No internal coatings· No derating or heat sink required to 80°C All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified.
MTE2077N1-R: Emitter Visible 765nm 50ma Rad
The is a red 3/4, 5mm water clear emitter designed for applications requiring high power output and high reliability in a narrow angle package. FEATURES > High Reliability > Narrow Beam Angle > High Output
PDI-E906: Emitter Ir 940nm T 1 3/4
Bulk ; T 1 3/4
HIR333/H0: Emitter Ir 850nm 100ma Radial
Features High reliability High radiant intensity Peak wavelength p=850nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. EVERLIGHT's Infrared
SEP85063: Infrared Emitter, 50 Ma, 700 Ns, 700 Ns, 50 °, 1.5 V, -40 °c
50mA ; 700ns ; 700ns ; 50° ; 1.5V ;
MTE0012-995-IR: Swir Emitter 1200nm Plcc2 Smd
Description - SMD 3527 (1411) Package - Type: InGaAs/InP, MQW - High power - High speed - High reliability Application - Optical switches - Optical communication - Safety equipment - Automation Operating
VSMF2893GX01: Infrared Emitter, 100 Ma, 30 Ns, 30 Ns, 50 , 1.6 V, -40 C
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH VSMF2893X01 series are infrared, 890 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted

VSMF2893RGX01
QED121: Emitter Ir 880nm 100ma Radial
= 880nm Chip material = AlGaAs Package type: 3/4 (5mm lens diameter) Matched photosensor: QSD122/QSD123/QSD124 Narrow emission angle, 16° High output power Package material and color: clear, peach tinted,

QED121A4R0
QED122
QED122A3R0
QED123: Infrared Emitter, 100 Ma, 900 Ns, 800 Ns, 16 °, 1.7 V, -40 °c
QED123A4R0: Emitter Ir 890nm 100ma Radial
MTE8600M2: Emitter Ir 850nm 100ma Radial
The 850nm IR emitter series is designed for applications requiring high output and precise optical / mechanical axis alignment. Custom package solutions and sorting are available. FEATURES > High Output
OED-EL1206C140: Emitter Ir 940nm 100ma 1206
Tape & Reel (TR) ; IR ; 100mA ; 0.45mW/sr @ 50mA ; 940nm
SFH 4243-Z: Emitter Ir 940nm 70ma 3.20mm Smd
High Power Infrared Emitter (940 nm) IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 Features:· High Power Infrared LED· Short switching time Applications· Infrared Illumination for cameras·
SFH 4640: Emitter Ir 950nm 100ma 1206
Narrow beam LED in MIDLED package (940 nm) Engwinklige LED im MIDLED-Gehäuse (940 nm) Version 1.2 Features:· High Power Infrared LED (55 mW)· Short switching times· Narrow halfangle 15°)· Low profile component·
TSOP31230: Infrared Receiver, Remote Control, 30 Khz, 45m, 45 °, 2.5 V, 5.5 V, 450 µa
The TSOP312. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated

TSOP31236: Infrared Receiver, Remote Control, 36 Khz, 45m, 45 °, 2.7 V, 5.5 V, 450 µa
TSOP31238: Infrared Receiver, Remote Control, 38 Khz, 45m, 45 °, 2.7 V, 5.5 V, 450 µa
TSOP31240: Infrared Receiver, Remote Control, 40 Khz, 45m, 45 °, 2.7 V, 5.5 V, 450 µa
TSOP31256: Infrared Receiver, Remote Control, 56 Khz, 45m, 45 °, 2.5 V, 5.5 V, 450 µa
SFH 4247-Z: Emitter Ir 940nm 70ma 2015
High Power Infrared Emitter (940 nm) IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to OS-PCN-2009-021-A2 Features:· High Power Infrared LED· Short switching times Applications·
SFH 4555: Emitter Ir 850nm 100ma Radial
High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to OS-PCN-2009-021-A2 Features:· High Power Infrared LED· Short switching time Applications·

SFH 4555 -BW
SFH 7250: Emitter Ir 850nm
Features:· Available on tape and reel· SMT package with IR emitter (850 nm) and Si-phototransistor· Suitable for SMT assembly· Emitter und detector can be controlled separately Besondere Merkmale:· Gegurtet
LZC-00U600-0000: Emitter Uv 365nm 700ma 2smd
Ultra-bright, compact 365nm UV LED Very high Radiant Flux density Small high density foot print, x 9.0mm Surface mount ceramic package with integrated glass lens Exceptionally low Thermal Resistance (0.7°C/W)

LZC-00U600-00U0
LZC-70U600-00U0: Emitter Uv 365nm 700ma Star
LZC-C0U600-0000
LZC-C0U600-00U0
LHUV-0380-0150: Emitter Uv 385nm 500ma Wfdfn
Superior flux density, efficiency and design freedom in the industry's only micro-package UV LED At 1/5th the size of other ultraviolet and violet LEDs, LUXEON Z UV LEDs, a SMT device, can be assembled

LHUV-0380-0200: Emitter Uv 385nm 500ma Smd
LHUV-0385-0200: Emitter Uv 390nm 500ma Wfdfn
LHUV-0385-0250: Emitter Uv 390nm 500ma Smd
LHUV-0390-0300: Emitter Uv 395nm 500ma Wfdfn
LHUV-0390-0350
LHUV-0390-0400
LHUV-0390-0450
LHUV-0395-0350: Emitter Uv 400nm 500ma Wfdfn
LHUV-0395-0400
LHUV-0395-0450
XZTHI54W: Emitter Ir 880nm 50ma 0805
Features Long life and robust package Standard Package: 2,000pcs/ Reel MSL (Moisture Sensitivity Level): 3 RoHS compliant Forward Current (Peak) 1/100 Duty Cycle 10us Pulse Width Spectral Line Full Width
APT1608SF4C-PRV: Emitter Ir 880nm 50ma 603
Features z 1.6mmX0.8mm SMT LED, 0.75mm thickness. z Mechanically and spectrally matched to phototransistor. z Package: 2000pcs / reel. z Moisture sensitivity level : level 3. z RoHS compliant. SF4 Made
QBED8120: Emitter Ir 940nm 50ma Radial
Bulk ; IR ; 50mA ; 30mW/sr @ 50mA ; 940nm ; Voltage - Forward
TSAL6100: Infrared Emitter, High Power, 100 Ma, 800 Ns, 800 Ns, 10 °, 2.6 V, -40 °c
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray
MTMS7700T38: Emitter Visibl 770nm 50ma To-5-8
The is a multi-chip emitter designed for applications requiring same emission sources in a small, densely packaged area. These devices can be custom designed for specific wavelengths and outputs. FEATURES >
SFH 4715A: Emitter Ir 850nm 1a Smd
Features:· IR lightsource with high efficiency· Low thermal resistance (Max. 11 K/W)· Centroid wavelength 850 nm· ESD safe 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2· Superior Corrosion Robustness
MTE5016-095-IR: Swir Emitter 1650nm To-46 Flat
Description - TO-46 with flat glass lens cap - Type: InGaAs/InP, MQW - High power - High speed - Wide beam angle - High reliability Application - Optical switches - Optical communication - Safety equipment
SIR12-21C/TR8: Emitter Ir 875nm 65ma 1208
Chip Infrared LED With Right Angle Lens SIR12-21C/TR8 Features Small double-end package Low forward voltage Good spectral matching to Si photo detector Package in 8mm tape on 7" diameter reel Pb free The product
VTE1285H: Infrared Emitter, 100 Ma, 1 µs, 1 µs, 8 °, 1.5 V, -40 °c
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half
MTE8600CP: Emitter Ir 850nm 80ma Smd
The 850nm IR emitter series is designed for applications requiring high output and precise optical / mechanical axis alignment. Custom package solutions and sorting are available. FEATURES > Ceramic Dome
PDI-E914: Emitter Ir 940nm 180ma To-46
High-Power & Current GaAs Infrared Emitters Peak Wavelength, 940 nm,Type PDI-E914 TO-46 HERMETIC CAN PACKAGE 80O HALF INTENSITY BEAM ANGLE FEATURES diode uses dual cathode,high current reliability liquid phase
VSMY2943G: Infrared Emitter, 100 Ma, 10 Ns, 10 Ns, 56 , 2 V, -40 C
High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2943 series are infrared, 940 nm emitting diodes based on GaAlAs surface

VSMY2943RG
QBED8340: Emitter Ir 850nm 100ma Radial
Bulk ; IR ; 100mA ; 30mW/sr @ 50mA ; 850nm ; Voltage - Forward
GL100MD0MP1: Emitter Ir 940nm 50ma Smd
Tape & Reel (TR) ; IR ; 50mA ; 940nm ; 1.5V ;
SFH 4716A: Emitter Ir 860nm 1a Smd
Features:· IR lightsource with high efficiency· Low thermal resistance (Max. 11 K/W)· Centroid wavelength 850 nm· ESD safe 2 kV acc. to ANSI/ESDA/JEDEC JS-001-HBM, Class 2· Superior Corrosion Robustness
TSOP32538: Infrared Receiver, Remote Control, 38 Khz, 45m, 45 , 2.5 V, 5.5 V, 350 A
MECHANICAL DATA Pinning for 1 = OUT, 2 = GND, = VS Pinning for 1 = OUT, 2 = VS, 3 = GND FEATURES These products are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier

TSOP34338
TSOP34536: Infrared Receiver, Remote Control, 36 Khz, 45m, 45 , 2.5 V, 5.5 V, 350 A
TSOP34538: Infrared Receiver, Remote Control, 38 Khz, 45m, 45 , 2.5 V, 5.5 V, 350 A
MT0380-UV-A: Emitter Uv 400nm 30ma Radial
SPECIFICATION Description This purple lamp is made with InGaN chip and water clear epoxy resin. Notes: 1. All dimensions are in mm. 2. Tolerance ± 0.25mm unless otherwise noted. Symbol Condition Min.
F5D1: Emitter Ir 880nm 100ma To-46
FEATURES · Hermetically sealed package· High irradiance level 1. Dimensions for all drawings are in inches (mm). 2. Tolerance (.25) on all non-nominal dimensions 1. Derate power dissipation linearly 1.70

F5D1B
F5D2
F5D3
TSTS7100: Infrared Emitter, Hermetically Sealed, 100 Ma, 800 Ns, 5 °, 1.3 V
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs DESCRIPTION is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. FEATURES· Package type: leaded·
SFH 4248-Z: Emitter Ir 940nm 100ma Smd
High Power Infrared Emitter (940 nm) IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to OS-PCN-2009-021-A2 Features:· High Power Infrared LED· Short switching times· Half angle

SFH 4249-Z
MTE6800N2-UR: Emitter Visible 680nm 50ma Rad
The is a red, 5mm water clear emitter designed for applications requiring flat top, high power output and high reliability in a wide angle package. FEATURES APPLICATIONS > Optical Sensors > Optical Switches
MTPS8085MC: Emitter Ir 855nm 60ma Smd
The 850nm Point Source Series is designed for applications requiring high accuracy and precision as well as uniform spectral emission. Custom package solutions and sorting are available. FEATURES > 3.5×2.2×1.24
E3ZT81L2M: Infrared Emitter, 15 °, -25 °c
For almost all binaray-detection applications, you can make selection from the E3Z Photoelectric Sensor with built-in amplifier is applicable to a wide variety of lines and ensures a longer sensing distance
OPR2800T: Infrared Emitter, 50 Ma, 500 Ns, 500 Ps, 100 °, 1.5 V, -55 °c
· High-power GaAIAs· Matches PLCC-2 footprint· 875 nm wavelength· Wide beam angle· Wide operating temperature range +100o C) The is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC)
SE3470-001: Emitter Ir 880nm 100ma To-46
FEATURES· TO-46 metal can package· Choice of flat window or lensed package· or 20” (nominal) beam angle option· 880 nm wavelength· Higher output power than GaAs at equivalent drive currents· Wide operating

SE3470-002
SE3470-003: Infrared Emitter, Metal Can, 100 Ma, 700 Ns, 700 Ns, 90 °, 1.9 V, -55 °c
SE5470-001: Emitter Ir 880nm 100ma To-46
SE5470-002
SE5470-003: Infrared Emitter, Metal Can, 100 Ma, 700 Ns, 700 Ns, 20 °, 1.9 V, -55 °c
SE5470-004: Ir Emitter, 880nm, 4.7mm, To-46-2, Though Hole
TSOP57538TT1: Infrared Receiver, Remote Control, 38 Khz, 40m, 75 , 2.5 V, 5.5 V, 700 A
ORDERING CODE Taping: TSOP57.TT - top view taped TSOP57.TR - side view taped FEATURES · Suitable for all common data formats including those for short bursts The TSOP573., TSOP575. series are miniaturized
QBLP630-IR2: Led Ir Chip Wlp 880nm 0805
Tape & Reel (TR) ; IR ; 50mA ; 0.2mW/sr @ 20mA ; 880nm ; Voltage
LN55: Emitter Ir 950nm 50ma Radial
Features High-power output, high-efficiency 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light 950 nm (typ.) High-speed modulation capability Parameter