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Part number
DistributorStockDCManufactureDescription
 
621853  12  -  -  
 
10000  2008  -  -  
 
5600  -  -  -  
 
10000  2008  -  -  
 
56  09  TO247  ST  
 
498101  12  -  -  
 
32258  -  ST  SOT-23  
 
11229  11/13/14  ST  TO247MAX/TO-247/MAX247  
 
6  2015  ST  TO-3P  
 
9800  -  ST  TO  
 
20000  2016  ST  -  
 
498101  12  -  -  

 

Part information


TYPICAL RDS(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part numberCircuit descriptionManufacture
STY34NB50F Medium Voltage. N-channel 500V - 0.11 Ohm - 34A - MAX247 Powermesh MOSFET
Category: Discrete - Transistors
ST Microelectronics, Inc.

 

 
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