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Part number
DistributorStockDCManufactureDescription
 
2000  10  SAMSUNG  TSOP  
 
10000  2008  -  -  
 
2331  15/04/05  SAMSUNG  BGA/FBGA  
 
621853  12  -  -  
 
2790  -  -  -  
 
10000  2008  -  -  
 
10000  2008  -  -  
 
10000  2008  -  -  
 
19418  13  SEC  -  
 
2000  -  -  -  
 
457  -  SEC  BGA11.510  
 
2331  15/04/05  SAMSUNG  BGA/FBGA  
 
3000  2013  SEC  BGA  
 
621853  12  -  -  
 
607  12  SEC  BGA11.5 10  
 
457  -  SEC  BGA11...  
 
0  457  SEC  05  
 
2440  -  -  -  
 
50000  12  SEC  -  
 
50000  -  -  -  
 
3000  -  N/A  BGA  
 
2698  -  -  -  
 
1650  -  -  -  
 
10000  2008  -  -  
 
3356  05/06/12/15  SAMSUNG  BGA/FBGA  
 
621853  12  -  -  
 
621853  12  -  -  
 
1530  -  SAMSUNG  FBGA  
 
621853  12  -  -  
 
10000  2008  -  -  
 
2331  15/04/05  SAMSUNG  BGA/FBGA  
 
3100  -  -  -  
 
2331  15/04/05  SAMSUNG  BGA/FBGA  
 
10000  2008  -  -  
 
2990  -  -  -  
 
1000  -  SAMSUNG  N/A  
 
621853  12  -  -  
 
2000  -  N/A  BGA  
 
621853  12  -  -  
 
33550  2016  N/A  Original & new  
 
621853  12  -  -  
 
10000  2008  -  -  
 
10000  2008  -  -  
 
621853  12  -  -  
 
10000  2008  -  -  

 

Part information


* Samsung Electronics reserves the right to change products or specification without notice.
FEATURES

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS latency & 3) Burst length Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM (x4,x8) & L(U)DQM (x16) for masking Auto & self refresh 64ms refresh period (8K Cycle)

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized

Part numberCircuit descriptionManufacture
K4S511632B Description = K4S511632B 8M X 16Bit X 4 Banks Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75 ;; Package = 54TSOP ;; Power = C,l ;; Production Status = Mass
Category: Memory - DRAM
Samsung Semiconductor, Inc.
K4S511632B-TCL75 - -
K4S511632C Description = K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632C-KC/L1H - -
K4S511632C-KC/L1L - -
K4S511632C-KC/L75 - -
K4S511632C-KC/L7C - -
K4S511632D Description = K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632D-KC/L1H - -
K4S511632D-KC/L1L - -
K4S511632D-KC/L75 - -
K4S511632D-KC/L7C - -
K4S511632M Description = K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632M-TC/TL1H - -
K4S511632M-TC/TL1L - -
K4S511632M-TC/TL75 - -
K4S511633C Mobile SDRAM. Description = K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 145mA/1800uA ;; Speed = 80,1H,1L -
K4S511633C-XXXX - -
K4S511633C-YL/N/P - -
K4S511633C-YL/N1H - -
K4S511633C-YL/N1L - -
K4S511633C-YL/N80 - -
K4S51163LC Mobile SDRAM. Description = K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120/1600uA ;; Speed = 1H,1L,15 ;; Mobile -
K4S51163LC-XXXX - -
K4S51163LC-YG/S - -
K4S51163LC-YG/S15 - -
K4S51163LC-YG/S1H - -
K4S51163PF 8M x 16Bit x 4 Banks Mobile-SDRAM The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS -
K4S51163PF-Y(P)F75 - -
K4S51163PF-Y(P)F90 - -

 

 
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