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Part number
DistributorStockDCManufactureDescription
 
3476  0843/13/02  SAMSUNG  TSOP/TSOP54  
 
10  06  SAMSUNG  TSOP  
 
35000  2016  -  -  
 
3000  -  SAMSUNG  TSOP  
 
3  -  SAM  -  
 
621853  12  -  -  
 
2000  10  SAMSUNG  TSOP  
 
120  2013  SAMSUNG  -  
 
2398  -  -  -  
 
5818  11  SAMSUNG  -  
 
10000  2008  -  -  
 
10000  12  N/A  -  
 
2148  -  SAMSUNG  TSOP  
 
621853  12  -  -  
 
10000  2008  -  -  
 
621853  12  -  -  
 
2568  -  -  -  
 
621853  12  -  -  
 
3476  0843/13/02  SAMSUNG  TSOP/TSOP54  
 
621853  12  -  -  
 
10000  2008  -  -  
 
621853  12  -  -  

 

Part information


* Samsung Electronics reserves the right to change products or specification without notice.
FEATURES

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS latency & 3) Burst length Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM (x4,x8) & L(U)DQM (x16) for masking Auto & self refresh 64ms refresh period (8K Cycle)

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized

Part numberCircuit descriptionManufacture
K4S511632B Description = K4S511632B 8M X 16Bit X 4 Banks Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75 ;; Package = 54TSOP ;; Power = C,l ;; Production Status = Mass
Category: Memory - DRAM
Samsung Semiconductor, Inc.
K4S511632B-TCL75 - -
K4S511632C Description = K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632C-KC/L1H - -
K4S511632C-KC/L1L - -
K4S511632C-KC/L75 - -
K4S511632C-KC/L7C - -
K4S511632D Description = K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632D-KC/L1H - -
K4S511632D-KC/L1L - -
K4S511632D-KC/L75 - -
K4S511632D-KC/L7C - -
K4S511632M Description = K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production -
K4S511632M-TC/TL1H - -
K4S511632M-TC/TL1L - -
K4S511632M-TC/TL75 - -
K4S511633C Mobile SDRAM. Description = K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 145mA/1800uA ;; Speed = 80,1H,1L -
K4S511633C-XXXX - -
K4S511633C-YL/N/P - -
K4S511633C-YL/N1H - -
K4S511633C-YL/N1L - -
K4S511633C-YL/N80 - -
K4S51163LC Mobile SDRAM. Description = K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120/1600uA ;; Speed = 1H,1L,15 ;; Mobile -
K4S51163LC-XXXX - -
K4S51163LC-YG/S - -
K4S51163LC-YG/S15 - -
K4S51163LC-YG/S1H - -
K4S51163PF 8M x 16Bit x 4 Banks Mobile-SDRAM The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS -
K4S51163PF-Y(P)F75 - -
K4S51163PF-Y(P)F90 - -

 

 
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