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Part number

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Stock

Manufacture

Description

K4S511632D-TC60

	621853	12	-	-
	7516	08	SAMSUNG	TSOP54

Part information

* Samsung Electronics reserves the right to change products or specification without notice.
FEATURES

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS latency & 3) Burst length Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM (x4,x8) & L(U)DQM (x16) for masking Auto & self refresh 64ms refresh period (8K Cycle)

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized

Part number	Circuit description	Manufacture
K4S511632B	Description = K4S511632B 8M X 16Bit X 4 Banks Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75 ;; Package = 54TSOP ;; Power = C,l ;; Production Status = Mass Category: Memory - DRAM	Samsung Semiconductor, Inc.
K4S511632B-TCL75	-	-
K4S511632C	Description = K4S511632C 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production	-
K4S511632C-KC/L1H	-	-
K4S511632C-KC/L1L	-	-
K4S511632C-KC/L75	-	-
K4S511632C-KC/L7C	-	-
K4S511632D	Description = K4S511632D 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production	-
K4S511632D-KC/L1H	-	-
K4S511632D-KC/L1L	-	-
K4S511632D-KC/L75	-	-
K4S511632D-KC/L7C	-	-
K4S511632M	Description = K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production	-
K4S511632M-TC/TL1H	-	-
K4S511632M-TC/TL1L	-	-
K4S511632M-TC/TL75	-	-
K4S511633C	Mobile SDRAM. Description = K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 145mA/1800uA ;; Speed = 80,1H,1L	-
K4S511633C-XXXX	-	-
K4S511633C-YL/N/P	-	-
K4S511633C-YL/N1H	-	-
K4S511633C-YL/N1L	-	-
K4S511633C-YL/N80	-	-
K4S51163LC	Mobile SDRAM. Description = K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120/1600uA ;; Speed = 1H,1L,15 ;; Mobile	-
K4S51163LC-XXXX	-	-
K4S51163LC-YG/S	-	-
K4S51163LC-YG/S15	-	-
K4S51163LC-YG/S1H	-	-
K4S51163PF	8M x 16Bit x 4 Banks Mobile-SDRAM The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS	-
K4S51163PF-Y(P)F75	-	-
K4S51163PF-Y(P)F90	-	-