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Part number
DistributorStockDCManufactureDescription
 
82500  -  -  -  
 
82500  2016  N/A  TSSOP  
 
1620  -  -  -  
 
10000  2008  -  -  

 

Part information


Revision 0.0 (February, 2003) - First version for internal review Revision 1.0 (June, 2003) - updated DC Characteristics Revision 1.1 (August, 2003) - Deleted speed at K4H511632B and corrected typo.

Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16) Four banks operation Differential clock inputs(CK and CK) DLL aligns DQ and DQS transition with CK transition MRS cycle with address key programs Read latency 2, 2.5 (clock) Burst length 4, 8) Burst type (sequential & interleave) All inputs except data & DM are sampled

Part numberCircuit descriptionManufacture
K4H511638B Description = K4H511638B DDR Sdram 512Mb B-die (x4, X8, X16) ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0 ;; Package = 66TSOP2,60FBGA ;; Power
Category: Memory - DRAM
Samsung Semiconductor, Inc.
K4H511638B-TC/LA2 - -
K4H511638B-TC/LB0 - -
K4H511638B-TC/LB3 - -
K4H511638D Description = K4H511638D 8Mx16Bitx4 Banks Double Data Rate Sdram ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = B3,A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production -
K4H511638D DDR SDRAM 512Mb D-die (x8, x16) The K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous -
K4H511638D-UC/LCC,B3,A2,B0 - -
K4H511638C DDR SDRAM 512Mb C-die (x4, x8, x16) The K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS -
K4H511638C-UC(L)/CC,B3,A2,B0 - -
K4H511638B DDR SDRAM 512Mb B-die (x4, x8, x16) The K4H511638B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS -
K4H511638B-G(Z)C/LCC,B3,A2,B0 - -
K4H511638 128mb DDR Sdram -
K4H511638A-TCA0 - -
K4H511638A-TCA2 - -
K4H511638A-TCB0 - -
K4H511638A-TLA0 - -
K4H511638A-TLA2 - -
K4H511638A-TLB0 - -
K4H511638B-G - -
K4H511638B-GC/LA2 - -
K4H511638B-GC/LB0 - -
K4H511638B-GC/LB3 - -
K4H511638B-GC/LCC - -
K4H511638B-TC/LCC - -
K4H511638B-TCA0 - -
K4H511638B-TCA2 - -
K4H511638B-TCB0 - -
K4H511638B-TLA0 - -
K4H511638B-TLA2 - -
K4H511638B-TLB0 - -

 

 
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