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Part number
DistributorStockDCManufactureDescription
 
1900  -  -  -  
 
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3  -  -  AVAILABLE  
 
35000  2016  SAMSUNG  Original & New  
 
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35000  2013  SAMSUNG  -  
 
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41960  -  N/A  BGA  
 
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621853  12  -  -  
 
35000  2013  SAMSUNG  -  
 
315  -  SAMSUNG  FBGA  
 
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35000  2013  SAMSUNG  -  
 
35  2009  SAMSUNG  FBGA  
 
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38  2009  SAMSUNG  FBGA  
 
21  -  SAMSUNG  -  
 
621853  12  -  -  
 
5000  2009  SAMSUNG  FBGA  
 
42000  -  N/A  BGA  
 
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2000  10  SAMSUNG  TSOP  
 
3553  0833  SAMSUNG  TSOP66  
 
2380  -  -  -  
 
621853  12  -  -  
 
0  -  1900  -  
 
3230  13  SAMSUNG  TSOP66  
 
35000  2013  SAMSUNG  -  
 
2790  -  -  -  
 
2440  -  -  -  
 
3230  13  SAMSUNG  TSOP66  
 
244  -  SAMSUNG  SOP  
 
621853  12  -  -  
 
1062  -  SAMSUNG  TSOP66  
 
4800  2015  Samsung  -  
 
2000  10  SAMSUNG  TSOP  
 
2514  12/0833/15  SAMSUNG  66TSOP/TSOP/TSOP66  
 
3553  0833  SAMSUNG  TSOP66  
 
5000  2013  SAMSUNG  TSOP66  
 
2698  -  -  -  
 
35000  2013  SAMSUNG  -  
 
1650  -  -  -  
 
621853  12  -  -  
 
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10  04  SAMSUNG  -  
 
2990  -  -  -  
 
621853  12  -  -  
 
10  04  SAMSUNG  -  
 
144  2016  SAMSUNG  -  

 

Part information


Revision 0.0 (February, 2003) - First version for internal review Revision 1.0 (June, 2003) - updated DC Characteristics Revision 1.1 (August, 2003) - Deleted speed at K4H511632B and corrected typo.

Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16) Four banks operation Differential clock inputs(CK and CK) DLL aligns DQ and DQS transition with CK transition MRS cycle with address key programs Read latency 2, 2.5 (clock) Burst length 4, 8) Burst type (sequential & interleave) All inputs except data & DM are sampled

Part numberCircuit descriptionManufacture
K4H510838B Description = K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0 ;; Package = 66TSOP2,54sTSOP2,60FBGA
Category: Memory - DRAM
Samsung Semiconductor, Inc.
K4H510838B-TC/LA2 - -
K4H510838B-TC/LAA - -
K4H510838B-TC/LB0 - -
K4H510838B-TC/LB3 - -
K4H510838C Description = K4H510838C DDP 512Mb(x8) DDR Sdram ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status -
K4H510838C-KCA0 - -
K4H510838C-KCA2 - -
K4H510838C-KCB0 - -
K4H510838C-KCB3 - -
K4H510838M Description = K4H510838M 512Mb DDR Sdram ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Mass Production -
K4H510838M-TCA0 - -
K4H510838M-TCA2 - -
K4H510838M-TCB0 - -
K4H510838M-TLA0 - -
K4H510838M-TLA2 - -
K4H510838M-TLB0 - -
K4H510838D DDR SDRAM 512Mb D-die (x8, x16) The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous -
K4H510838D-UC/LCC,B3,A2,B0 - -
K4H510838C DDR SDRAM 512Mb C-die (x4, x8, x16) The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS -
K4H510838C-UC(L)/CC,B3,A2,B0 - -
K4H510838B DDR SDRAM 512Mb B-die (x4, x8, x16) The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS -
K4H510838B-G(Z)C/LCC,B3,A2,B0 - -
K4H510838A-TCA0 128mb DDR Sdram -
K4H510838A-TCA2 - -
K4H510838A-TCB0 - -
K4H510838A-TLA0 - -
K4H510838A-TLA2 - -
K4H510838A-TLB0 - -
K4H510838B-GC/LA2 - -

 

 
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