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Part number
DistributorStockDCManufactureDescription
 
5341  12/0722/0831  SAMSUNG  TSSOP-66/TSSOP/TSOP  
 
28000  2016  SANSUMG  TSSOP-66  
 
20000  12  SANSUMG  -  
 
10000  13  SANSUMG  -  
 
370  -  SAMSUNG  TSOP66  
 
1620  -  -  -  
 
3553  0833  SAMSUNG  TSOP66  
 
621853  12  -  -  
 
10  -  MICRON  -  
 
40000  2016  RAYCHEM  -  
 
870  -  SAMSUNG  TSOP66  
 
10000  2008  -  -  
 
3230  13  SAMSUNG  TSOP66  
 
40463  -  SAMSUNG  TSSOP  
 
2000  10  SAMSUNG  TSOP  
 
9  2006  MICRON  TSOP  
 
621853  12  -  -  
 
2770  -  -  -  
 
5341  12/0722/0831  SAMSUNG  TSSOP-66/TSSOP/TSOP  
 
621853  12  -  -  
 
2760  -  -  -  
 
2410  -  -  -  
 
10000  2008  -  -  
 
2530  -  -  -  
 
1850  -  -  -  
 
10  -  SAMSUNG  TSSOP  
 
5341  12/0722/0831  SAMSUNG  TSSOP-66/TSSOP/TSOP  
 
621853  12  -  -  
 
55  2009  SAMSUNG  TSSOP-66  
 
500  2016  MAXIM  -  
 
10000  2008  -  -  
 
621853  12  -  -  

 

Part information


Revision 0.0 (February, 2003) - First version for internal review Revision 1.0 (June, 2003) - updated DC Characteristics Revision 1.1 (August, 2003) - Deleted speed at K4H511632B and corrected typo.

Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16) Four banks operation Differential clock inputs(CK and CK) DLL aligns DQ and DQS transition with CK transition MRS cycle with address key programs Read latency 2, 2.5 (clock) Burst length 4, 8) Burst type (sequential & interleave) All inputs except data & DM are sampled

Part numberCircuit descriptionManufacture
K4H510838B Description = K4H510838B DDR Sdram 512Mb B-die (x4, X8, X16) ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = CC,C4,B3,AA,A2,B0 ;; Package = 66TSOP2,54sTSOP2,60FBGA
Category: Memory - DRAM
Samsung Semiconductor, Inc.
K4H510838B-TC/LA2 - -
K4H510838B-TC/LAA - -
K4H510838B-TC/LB0 - -
K4H510838B-TC/LB3 - -
K4H510838C Description = K4H510838C DDP 512Mb(x8) DDR Sdram ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status -
K4H510838C-KCA0 - -
K4H510838C-KCA2 - -
K4H510838C-KCB0 - -
K4H510838C-KCB3 - -
K4H510838M Description = K4H510838M 512Mb DDR Sdram ;; Organization = 64Mx8 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 8K/64ms ;; Speed = A2,B0,A0 ;; Package = 66TSOP2 ;; Power = C,l ;; Production Status = Mass Production -
K4H510838M-TCA0 - -
K4H510838M-TCA2 - -
K4H510838M-TCB0 - -
K4H510838M-TLA0 - -
K4H510838M-TLA2 - -
K4H510838M-TLB0 - -
K4H510838D DDR SDRAM 512Mb D-die (x8, x16) The K4H510838D is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous -
K4H510838D-UC/LCC,B3,A2,B0 - -
K4H510838C DDR SDRAM 512Mb C-die (x4, x8, x16) The K4H510838C is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS -
K4H510838C-UC(L)/CC,B3,A2,B0 - -
K4H510838B DDR SDRAM 512Mb B-die (x4, x8, x16) The K4H510838B is 536,870,912 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 8bits, fabricated with SAMSUNG's high performance CMOS -
K4H510838B-G(Z)C/LCC,B3,A2,B0 - -
K4H510838A-TCA0 128mb DDR Sdram -
K4H510838A-TCA2 - -
K4H510838A-TCB0 - -
K4H510838A-TLA0 - -
K4H510838A-TLA2 - -
K4H510838A-TLB0 - -
K4H510838B-GC/LA2 - -

 

 
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