Semiconductors Parts begin by F2 Page 1

F2-16XT : 32-Bit Flash Memory Controller
F 2-16 XT

F20 : Short Protection Rectifier - Throughhole
F 20

F20 : Fast Recovery Axial Rectifier,1500 V-3000 V,Io=0.35 a
F 20

F200 : 200 to 400 Watt "Full Bricks"
F 200

F200-24S3.3 : 200 to 400 Watt "Full Bricks"
F 200-24 S 3.3

F200-24S5 : 200 to 400 Watt "Full Bricks"
F 200-24 S5

F200-300S12 : 200 to 400 Watt "Full Bricks"
F 200-300 S 12

F200-300S15 : 200 to 400 Watt "Full Bricks"
F 200-300 S 15

F200-300S3.3 : 200 to 400 Watt "Full Bricks"
F 200-300 S 3.3

F200-300S5 : 200 to 400 Watt "Full Bricks"
F 200-300 S5

F200-48S12 : 200 to 400 Watt "Full Bricks"
F 200-48 S 12

F200-48S3.3 : 200 to 400 Watt "Full Bricks"
F 200-48 S 3.3

F200-48S5 : 200 to 400 Watt "Full Bricks"
F 200-48 S5

F2000A : High Brightness Led Chip, Red, 12 Mil
F 2000A

F2000D : High Brightness Led Chip, Red, 28 Mil
F 2000D

F2001 : Pout W = 2.5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 10 ;; GM Mho = 0.2
F 2001

F2001A : High Brightness Led Chip, Orange, 12 Mil
F 2001A

F2001S : Patented Gold Metalized Silicon Gate Enhancement Mode RF Power Vdmos Transistor
F 2001S

F2002 : Pout W = 5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 6 ;; GM Mho = 0.4 ;;
F 2002

F2002A : High Brightness Led Chip, Yellow, 12 Mil
F 2002A

F2002D : High Brightness Led Chip, Yellow, 28 Mil
F 2002D

F2002S : Patented Gold Metalized Silicon Gate Enhancement Mode RF Power Vdmos Transistor
F 2002S

F2003 : Pout W = 5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 6 ;; GM Mho = 0.2 ;;
F 2003

F2003B : High Brightness Led Chip, Yellowish Green, 12 Mil
F 2003B

F2004 : Pout W = 8 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 3 ;; GM Mho = 0.4 ;;
F 2004

F2004B : High Brightness Led Chip, Pure Green, 12 Mil
F 2004B

F2012 : Pout W = 10 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 4.2 ;; GM Mho = 0.8
F 2012

F2013 : Pout W = 20 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 2.1 ;; GM Mho = 0.8
F 2013

F20174013 : Battery Charger 13.8v / 50a
F 20174013

F20174027 : Battery Charger 27.2v / 25a
F 20174027

F2021 : Pout W = 7.5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 5 ;; GM Mho = 0.6
F 2021

F2041 : Pout W = 15 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 2.5 ;; GM Mho = 0.6
F 2041

F2046 : Pout W = 2.5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 10 ;; GM Mho = 0.2
F 2046

F2047 : Pout W = 5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 6 ;; GM Mho = 0.4 ;;
F 2047

F2048 : Pout W = 10 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 4.2 ;; GM Mho = 0.8
F 2048

F2049 : Pout W = 7.5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 5 ;; GM Mho = 0.6
F 2049

F2139BA : Package Description = 9 X 14 MM FR-4 ;; Frequency = 70.000 to 200.000 MHZ ;; Out
F 2139 BA

F2201 :
F 2201

F2201S : Patented Gold Metalized Silicon Gate Enhancement Mode RF Power Vdmos Transistor
F 2201S

F2202 :
F 2202

F2202S : Patented Gold Metalized Silicon Gate Enhancement Mode RF Power Vdmos Transistor
F 2202S

F2211 : Pout W = 15 ;; Freq MHZ = 400 ;; Gain DB = 10 ;; Theta JC = 6 ;; GM Mho = 0.4 ;;
F 2211

F2212 : Pout W = 8 ;; Freq MHZ = 850 ;; Gain DB = 10 ;; Theta JC = 4.2 ;; GM Mho = 0.8 ;
F 2212

F2213 : Pout W = 16 ;; Freq MHZ = 850 ;; Gain DB = 10 ;; Theta JC = 2.1 ;; GM Mho = 0.8
F 2213

F2246 : Pout W = 2 ;; Freq MHZ = 850 ;; Gain DB = 10 ;; Theta JC = 10 ;; GM Mho = 0.2 ;;
F 2246

F2247 : Pout W = 4 ;; Freq MHZ = 850 ;; Gain DB = 10 ;; Theta JC = 6 ;; GM Mho = 0.4 ;;
F 2247

F2248 : Pout W = 8 ;; Freq MHZ = 850 ;; Gain DB = 10 ;; Theta JC = 4.2 ;; GM Mho = 0.8 ;
F 2248

F25 : Fast Recovery Axial Rectifier,1500 V-3000 V,Io=0.35 a
F 25

F28F008SA-120 : 8-mbit ( 1-mbit X 8 ) Flashfiletm Memory
F 28 F 008 SA-120

F28F008SA-85 : 8-mbit ( 1-mbit X 8 ) Flashfiletm Memory
F 28 F 008 SA-85

F28F008SA-L200 : 8-Mbit(1Mbit X 8) Flashfile Memory. Access Speed 200ns, 3.3 V
F 28 F 008 SA-L 200

F28F010-120 : 1024k ( 128k X 8 ) CMOS Flash Memory
F 28 F 010-120

F28F010-150 : 1024k ( 128k X 8 ) CMOS Flash Memory
F 28 F 010-150

F28F010-65 : 1024k ( 128k X 8 ) CMOS Flash Memory
F 28 F 010-65

F28F010-90 : 1024k ( 128k X 8 ) CMOS Flash Memory
F 28 F 010-90

F28F020-150 : 2048(256 X 8) CMOS Flash Memory. Access Speed 150 NS
F 28 F 020-150

F28F020-70 : 2048(256 X 8) CMOS Flash Memory. Access Speed 70 NS
F 28 F 020-70

F28F020-90 : 2048(256 X 8) CMOS Flash Memory. Access Speed 90 NS
F 28 F 020-90

F2D900 : Frequency Doublers 5-1800Mhz
F 2 D 900

F2R-NPN : Photoswitch Fibre NPN
F 2 R-NPN

F2R-NPN-J-FEC : Photoswitch Fibre NPN
F 2 R-NPN-J-FEC

F2R-PNP : Photoswitch Fibre PNP
F 2 R-PNP

F2R-PNP-J-FEC : Photoswitch Fibre PNP
F 2 R-PNP-J-FEC

F2Series : Timing Extraction Bandpass Filter (1.5 to 100mhz)
F 2 Series

F2W005G : 50 V, 2 A, Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 005G

F2W01G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 01G

F2W02G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 02G

F2W04G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 04G

F2W06G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 06G

F2W08G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 08G

F2W10G : Fast Recovery Glass Passivated Bridge Rectifier
F 2 W 10G

 
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