|Category||Discrete => Thyristors|
|Description||100mm, 5000V, 3000A|
|Datasheet||Download C791/6RT302 datasheet
Type C791 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second generation pilot gate and a unique orientation of emitter shorts which promote the lateral expansion of conducting plasma resulting in lower spreading losses while achieving high dv/dt withstand.It is supplied in an industry accepted disc-type package,ready to mount using commercially available heat dissipators and mechanical clamping hardware.
REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE TJ= 2 5oC MODEL C791DE 4500 MECHANICAL OUTLINE
Repetitive peak offstate & reverse volts @ 5Hz Repetitive working crest voltage, 60Hz Off-state & reverse leakage current, 60Hz Average on-state current Peak half-cycle non-rep surge current On-state voltage 5000 VNon-Repetitive Surge Current and I2t for Fusing Itsm (kA)
Thermal resistance Externally applied clamping force
THYRISTOR GATE IMPEDANCE Enhanced by fast rising gate voltage,increasing anode bias and junction temperature.It at a minimum for dc current, zero anode bias and low temperature. GATE SUPPLY Prefer 50V/10 ohm for supporting the di/dt rating and life expectancy. The short circuit current risetime should be nominally 0.5us and the duration longer than the expected delay time for all magnitudes of anode bias. Practically 10-30us is recommended followed by a back porch 750ma if needed to sustain conduction. MINIMUM ACCEPTABLE GATE CURRENT The intersection of the load line and gate impedance characteristic indicates the minimum value of actual current needed during the delay time interval to support di/dt.A different load line meeting this criterion may be used. MAXIMUM GATE RATINGS Peak gate 300 W Average gate power,Pg(av) = 50W Peak gate current,Igfm 25 A Peak reverse voltage,Vgrm 25 V120-deg Conduction -includes spread loss as function of Overlap Angle , U
PEAK RECOVERY CURRENT versus COMMUTATING di/dt
Sine Wave - includes spread loss as function of conduction angle
INRUSH CURRENT (di/dt) RATING versus SWITCHING VOLTAGE
|Some Part number from the same manufacture Silicon Power|
|C791A/6RT302A 100mm, 4500V, 3250A|
|C792/6RT300 100mm, 6000V, 2100A|
|C795/6RT305 100mm, 3200V, 3800A|
|SDD303 100mm, 6000V, 3500A|
|SDD66 40mm, 7000V, 520A|
|SDT122 53mm, 4000V, 950A|
|SDT123 53mm, 9000V, 300A|
|SDT200 77mm, 1800V, 3200A|
|SPT227 77mm, 4500V, 1650A|
|SPT312 100mm, 4500V, 3000A|
|SPT315 100mm, 2500V, 4700A|
|SPT401 125mm, 5000V, 5000A|
1N4454 : Signal or Computer Diode. Signal or Computer Diode, Package : DO-35. 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE HERMETICALLY SEALED METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION Junction Temperature: to +175°C Storage Temperature: to +175°C Operating Current: = +25°C Derating Factor: 1.33 mA/°C Above + 25°C Surge Current A: 1A (pk), = 1 sec Surge Current B: 4A (pk),.
2EZ11 : . GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11~200 Volts Power - 2.0 Watts Low profile package Built-in strain relief Glass passivated iunction Low inductance Typical ID less than 1.0µA above 11V Plastic package has Underwriters Laboratory Flammability Classification 94V-O Case: JEDEC DO-15, Molded plastic over passivated junction Terminals:.
APT6021BFLL : 600V, 29A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
BBY42 : BBY42; VHF Variable Capacitance Diode;; Package: SOT23 (SST3). Excellent linearity Small plastic SMD package C28: 2.7 pF; ratio: 14. APPLICATIONS Electronic tuning in VHF television tuners, band to 460 MHz VCO. The is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOT23 small plastic SMD package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
CJD31C : . : The CENTRAL SEMICONDUCTOR CJD31C, CJD32C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage.
D45C7 : General Purpose Transistor.
HS11 : High efficiency rectifier diodes. High Efficiency Rectifier Diodes.
IRGPC40FD2 : Medium Voltage 600-1199 Volts. Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode.
SD-402 : Position Sensitive Diodes. The SD-402 is position sensors for automatic focusing of camera. It has 22 milimeter area. ¶ULaser beam focusing/positioning is best performed ¶UHigh performance APPLICATIONS Reverse voltage Power dissipation Operating temp. Storage temp. Reverse voltage Dark current Light current Spectral sensitivity Peak wavelength Capacitance Resistance Signal slope.
08261M4T43-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.
FJE3303O : 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126. s: Polarity: NPN ; Package Type: TO-126, 3 PIN.
P1104UAL : 20 A, SILICON SURGE PROTECTOR. s: Thyristor Type: Thyristor Surge Suppressor, SILICON SURGE PROTECTOR ; Package Type: ROHS COMPLIANT, MODIFIED MS-013, SOIC-6 ; Pin Count: 6 ; Standards and Certifications: RoHS.
SR40 : CAPACITOR, CERAMIC, MULTILAYER, 50; 100; 200 V, THROUGH HOLE MOUNT, 1206. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Mounting Style: Through Hole ; EIA Case Size: 1206 ; Operating Temperature: -67 to 257 F (218 to 398 K).
THCN1510-0R3 : 1 ELEMENT, 0.3 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, FLAT ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 0.3000 microH.
1122MQMB100GHN0110 : CAP,AL2O3,1.2MF,315VDC,20% -TOL,20% +TOL. 2000 Load life :105 2000 hours Wide operating temperature range UPS Suited for smoothing circuits for general purpose inverter control for F.A. machine designed for use as input filter capacitor for current S Nominal Capacitance Range Capacitance Tolerance : Leakage current: ) 20 After application of rated voltage for 5 minutes: F) C: Nominal Capacitance.
277LMH250M2BC : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250 V, 270 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 270 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 250 volts ; Leakage Current: 3000 microamps ; ESR: 921 milliohms ; Mounting Style: Through Hole ; Operating Temperature: -25 to 105 C (-13 to 221 F).
2N3805ADCSMG4 : 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB. s: Polarity: PNP ; Package Type: HERMETIC SEALED, CERAMIC, LCC2-6.
33ZM05D : RESISTOR, VOLTAGE DEPENDENT, 24 V, 2.5 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Power Rating: 0.0100 watts (1.34E-5 HP) ; Operating DC Voltage: 24 volts.