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Details, datasheet, quote on part number:TP0205A
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Datasheet text preview:
TP0205A/AD
New Product
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
3.8 @ VGS = 4.5 V 5.0 @ VGS = 2.5 V
ID (mA)
180 100
FEATURES
D D D D D High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA
SOT-323
SC-70 (3-Leads) G 1 3 S 2 D S1 G1 D2 1 2 3
SOT-363
SC-70 (6-Leads)
6 5 4
D1 G2 S2
Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability
Order Number: TP0205A
Order Number: TP0205AD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS V GS ID IDM
TP0205A
20 "8 180 140 500 0.15
TP0205AD
Unit
V
mA
0.20 (Total) 0.13 (Total) 55 to 150 W _C
PD TJ, Tstg
0.10
THERMAL RESISTANCE RATINGS
Parameter
Thermal resistance, Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279--Rev. B, 16-Jul-01 www.vishay.com
Symbol
RthJA
TP0205A
833
TP0205AD
625 (Total)
Unit
_C/W
11-1
TP0205A/AD
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VGS = 4.5 V, VDS = 8.0 V VGS = 2.5 V, VDS = 5.0 V VGS = 4.5 V, ID = 180 mA rDS(on) gfs VSD VGS = 2.5 V, ID = 400 120 2.6 4.0 200 0.7 1.2 3.8 5.0 W mS V mA 20 0.4 24 V 0.9 "2 0.001 1.5 "100 nA 100 1 mA
Symbol
Test Condition
Min
Typb
Max
Unit
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
75 mA
VDS = 2.5 V, ID = 50 mA IS = 50 mA, VGS = 0 V
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 5.0 V, VGS = 0 V, f = 1 MHz GS VDS = 5.0 V, VGS = 4.5 V, ID = 100 mA 350 25 125 20 14 5 pF 450 pC
Switching c
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = 3.0 V, RL = 100 W ID = 0.25 A, VGEN = 4.5 V, RG = 10 W 7 25 19 9 12 35 30 15 VPOJ ns
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70869 S-04279--Rev. B, 16-Jul-01
TP0205A/AD
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.2 5V 0.4 4.5 V 0.8 4 V 3.5 V 3 V 2.5 V 2 V 0.0 0 1 2 3 4 0.0 0.0 3.0 ID Drain Current (A) 25_C 0.3 125_C 0.5 TJ = 55_C
Vishay Siliconix
Transfer Characteristics
1.0 ID Drain Current (A)
0.6
0.2
0.4
0.2
0.1
0.5
1.0
1.5
2.0
2.5
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
8 45 VG S = 0 V f = 1 MHz rDS(on) On-Resistance ( ) 36 C Capacitance (pF) 6
Capacitance
VGS = 2.5 V 4 VGS = 4.5 V 2
27 Ciss 18 Coss 9 Crss
0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12
ID Drain Current (A) 10 VGS Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA
VDS Drain-to-Source Voltage (V)
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 180 mA
rDS(on) On-Resistance ( ) (Normalized)
8
1.4
6
1.2
4
1.0
2
0.8
0 0 100 200 300 400 500 600
0.6 50
25
0
25
50
75
100
125
150
Qg Total Gate Charge (pC)
TJ Junction Temperature (_C)
Document Number: 70869 S-04279--Rev. B, 16-Jul-01
www.vishay.com
11-3
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