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Details, datasheet, quote on part number:TP0202T
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Datasheet text preview:
TP0202T
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS Min (V)
20
rDS(on) Max (W)
1.4 @ VGS = 10 V 3.5 @ VGS = 4.5 V
VGS(th) (V)
1.3 to 3 V 1.3 to 3 V
ID (A)
0.41 0.27
FEATURES
D D D D D High-Side Switching Low On-Resistance: 0.9 W Low Threshold: 2.1 V Fast Switching Speed: 18 ns Low Input Capacitance: 55 pF
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control
TO-236 (SOT-23)
G
1 3 D
Marking Code: P3wll P3 = Part Number Code for TP0202T w = Week Code ll = Lot Traceability
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS V GS ID IDM PD RthJA TJ, Tstg
Limit
20 "20 0.41 0.26 0.75 0.35 0.22 357 55 to 150
Unit
V
A
W _C/W _C
Document Number: 70208 S-04279--Rev. G, 16-Jul-01
www.vishay.com
11-1
TP0202T
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V TJ = 55_C VDS = 10 V, VGS = 10 V VGS = 4.5 V, ID = 0.05 A VGS = 10 V, ID = 0.2 A VDS = 10 V, ID = 0.2 A IS = 0.25 A, VGS = 0 V 250 0.5 0.75 1.7 0.9 600 0.9 1.5 3.5 1.4 W mS V 20 1.3 25 2.1 3 "100 1 10 mA A V nA
Symbol
Test Conditions
Min
Typa
Max
Unit
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz VDS 16 V, VGS =10 V, ID ^ 200 mA 2700 500 600 55 50 18 pF pC
Switchingc
td(on) Turn-On Time tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = 15 V, RL = 75 W ID ^ 0.2 A, VGEN = 10 V RG = 6 W 8 20 20 30 12 30 ns 35 40 VPBP02
Turn-Off Time
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11-2
Document Number: 70208 S-04279--Rev. G, 16-Jul-01
TP0202T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.8
Output Characteristics
5 V 1.0
Transfer Characteristics
TA = 55_C
0.6 ID Drain Current (A)
0.8 VGS = 10 thru 6 V ID Drain Current (A) 0.6
25_C 125_C
0.4 4 V 0.2 3 V 0.0 0 1 2 3 4
0.4
0.2
0.0 0.0
1.5
3.0
4.5
6.0
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-Source Voltage
5
On-Resistance vs. Drain Current
rDS(on) On-Resistance ( )
ID = 200 mA 3
rDS(on) On-Resistance ( )
4
4
3 VGS = 4.5 V 2 VGS = 10 V 1
2
1
ID = 50 mA
0 0 4 8 12 16 20
0 0.0
0.1
0.2
0.3
0.4
0.5
VGS Gate-to-Source Voltage (V)
ID Drain Current (A)
180 160 140 C Capacitance (pF) 120 100 80 60 40 20 0 0 4 Crss Ciss Coss VGS = 0 V f = 1 MHz
Capacitance
20 ID = 200 mA VGS Gate-to-Source Voltage (V) 15
Gate Charge
10
VDS = 10 V VDS = 16 V
5
0 8 12 16 20 0 1000 2000 3000 4000 5000 6000
VDS Drain-to-Source Voltage (V)
Qg Total Gate Charge (nC)
Document Number: 70208 S-04279--Rev. G, 16-Jul-01
www.vishay.com
11-3
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