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Details, datasheet, quote on part number:TP0202K
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Datasheet text preview:
TP0202K
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
- 30
rDS(on) (W)
1.4 @ VGS = -10 V 3.5 @ VGS = -4.5 V
VGS(th) (V)
- 1.3 to -3.0 - 1.3 to -3.0
ID (mA)
- 385 - 240
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 (typ) Low Threshold: - 2.0 V (typ) Fast Swtiching Speed: 14 ns (typ) Low Input Capacitance: 31 pF (typ) Gate-Source ESD Protection
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven Without Buffer
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply Converter Circuits D Solid State Relays
TO-236 (SOT-23)
G 1 Marking Code: 2Kwll 3 S 2 Top View D 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulse Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range Notes a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71609 S-03590--Rev. C, 31-Mar-03 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS V GS ID IDM
PD
Limit
- 30 "20 - 385 - 280 - 750 350 185 350 - 55 to 150
Unit
V
mA
mW _C/W _C
RthJA TJ, Tstg
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TP0202K
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = -100 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "5 V VDS = 0 V, VGS = "10 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 85_C VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -50 mA VGS = -10 V, ID = -500 mA VDS = -5 V, ID = -200 mA IS = -250 mA, VGS = 0 V - 500 2.1 1.25 315 - 1.2 3.5 1.4 - 30 - 1.3 - 38 -2 - 3.0 "50 "300 - 100 - 10 mA mA W mS V nA V
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea On Resistance Forward Transconductancea Diode Forward Voltagea
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -16 V, VGS = -10 V, ID ^ -200 mA 175 225 1000 31 11 4 pF pC
Switchingb
Turn-On Time td(on) tr td(off) tf VDD = -15 V, RL = 75 W ID ^ -200 mA, VGEN = -10 V, RG = 6 W 9 6 30 20 ns
Turn-Off Time
Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature.
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11-2
Document Number: 71609 S-03590--Rev. C, 31-Mar-03
TP0202K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 1.6 1.4 I D - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
Output Characteristics
VGS = 10 V 8V 7V 6V 5.5 V 5V 4.5 V 4V 3.5 V 3V I D - Drain Current (mA)
1200 1000
Transfer Characteristics
TJ = -55_C 800 600 400 200 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 25_C 125_C
20
On-Resistance vs. Gate-Source Voltage
14 12 10 8 6 4 2 0
On-Resistance vs. Drain Current
- On-Resistance ( W )
16 VGS = 4.5 V
12
8
VGS = 10 V
r DS(on)
r DS(on)
- On-Resistance ( W )
VGS = 4.5 V VGS = 10 V
4
0 0 4 8 12 16 20 VGS - Gate -to-Source Voltage (V) 50 V GS = 0 V f = 1 MHz 40 C - Capacitance (pF) Ciss 30
0
200
400
600
800
1000
ID - Drain Current (mA)
Capacitance
16 V GS - Gate-to-Source Voltage (V) 14 12 ID = 200 mA
Gate Charge
VDS = 16 V 10 8 6 4 2 VDS = 10 V
20 Coss 10 Crss 0 0 4 8 12 16 20
0 0 200 400 600 800 1000 1200 1400 1600 Qg - Total Gate Charge (pC)
VDS - Drain-to-Source Voltage (V)
Document Number: 71609 S-03590--Rev. C, 31-Mar-03
www.vishay.com
11-3
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