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Details, datasheet, quote on part number:TP0101TS
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Datasheet text preview:
TP0101T/TS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
ID (A) VDS (V)
20
rDS(on) (W)
0.65 @ VGS = 4.5 V 0.85 @ VGS = 2.5 V
TP0101T
0.6 0.5
TP0101TS
1.0 0.9
FEATURES
D D D D D High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power SwitchingCell Phones, Pagers
TO-236 (SOT-23)
Top View G 1 3 S 2 D Marking Code: TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b _ Pulsed Drain Currenta TA= 25_C TA= 70_C
Symbol
VDS V GS ID IDM IS TA= 25_C TA= 70_C PD TJ, Tstg
TP0101T
20 "8 0.6 0.48 3 0.6 0.35 0.22 55 to 150
TP0101TSc
20 "8 1.0 0.8 3 1.0 1.0 0.65 55 to 150
Unit
V
A
Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range
W _C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70229 S-04279--Rev. D, 16-Jul-01 www.vishay.com
Symbol
RthJA
TP0101T
357
TP0101TSc
125
Unit
_C/W
11-1
TP0101T/TS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V TJ = 55_C VDS v 5 V, VGS = 4.5 V ID(on) VDS v 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 0.6 A rDS(on) gfs VSD VGS = 2.5 V, ID = 0.5 A VDS = 5 V, ID = 0.6 A IS = 0.6 A, VGS = 0 V 2.5 0.5 0.45 0.69 1300 0.9 1.2 0.65 0.85 W mS V A 20 0.5 26 0.9 1.5 "100 1 10 mA V nA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State Drain Currenta
Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 6 V, VGS = 0, f = 1 MHz VDS = 6 V, VGS =4.5 V ID ^ 0.6 A 2020 180 720 110 80 30 pF 3000 pC
Switching
td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. VDD = 6 V, RL = 12 W ID ^ 0.6 A, VGEN = 4.5 V RG = 6 W 7 25 19 9 12 35 ns 30 15 VPLJ01
Turn-Off Time
www.vishay.com
11-2
Document Number: 70229 S-04279--Rev. D, 16-Jul-01
TP0101T/TS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
6
Output Characteristics
2.0
Transfer Characteristics
TA = 55_C
5 ID Drain Current (A)
VGS = 5 V
4.5 V ID Drain Current (A) 4 V 1.5 25_C 125_C 1.0
4
3.5 V 3 V
3
2
2.5 V 2 V 1.5 V 0.5, 1 V
0.5
1
0 0 1 2 3 4
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS Drain-to-Source Voltage (V)
VGS Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
4 rDS(on) Drain-Source On-Resistance ( ) 350 300 3 C Capacitance (pF) 250 200 150
Capacitance
VG S = 0 f = 1 MHz
2 VGS = 2.5 V 1
Ciss 100 Coss 50 Crss
VGS = 4.5 V
0 0 1 2 3 4 5
0 0 3 6 9 12
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
7 6 VGS Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 600 VDS = 6 V ID = 0.5 A
Gate Charge
1.7
On-Resistance vs. Junction Temperature
1.5 rDS(on) On-Resistance ( ) (Normalized) VGS = 4.5 V ID = 0.5 A 1.3
1.1
0.9
1200
1800
2400
3000
0.7 50
0
50
100
150
Qg Total Gate Charge (pC)
TJ Junction Temperature (_C)
Document Number: 70229 S-04279--Rev. D, 16-Jul-01
www.vishay.com
11-3
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