Details, datasheet, quote on part number: ILQ66-4-Xxx7
PartILQ66-4-Xxx7
Category
DescriptionOptocoupler, Photodarlington Output, With Internal Rbe (Single, Dual, Quad Channel)
CompanyVishay Intertechnology
DatasheetDownload ILQ66-4-Xxx7 datasheet
  

 

Features, Applications

Optocoupler, Photodarlington Output, With Internal Rbe (Single, Dual, Quad Channel)
Features

Internal RBE for High Stability Four Available CTR Categories per Package Type BVCEO 60 V Standard DIP Packages

UL - File No. E52744 System Code or J DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1

Description

IL66, ILD66, and ILQ66 are optically coupled isolators employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels.

Remarks CTR 300 SMD-8 (option 7) CTR 400 SMD-8 (option 9) CTR 500 SMD-8 (option 9) CTR 500 SMD-16 (option 7) CTR 500 SMD-16 (option 9)

For additional option information and package dimensions see Option Section.

Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Each Channel Parameter Peak reverse voltage Continuous forward current Power dissipation Derate linearly from 25 C Test condition Symbol VRM IF Pdiss Value Unit mA mW mW/C

Parameter Power dissipation Derate linearly from 25C Test condition Symbol Pdiss Value 150 2.0 Unit mW mW/C

Parameter Isolation test voltage Total package power dissipation Test condition = 1.0 sec. ILD66 ILQ66 Derate linearly from ILD66 ILQ66 Creepage Clearance Comparative tracking index Isolation resistance VIO 500 V, Tamb 25 C VIO 500 V, Tamb 100 C Storage temperature Operating temperature Lead soldering time 260 C RIO Tstg Tamb Part Symbol VISO Ptot Value

Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

GaAs Emitter Parameter Forward voltage Reverse current Capacitance Test condition 0 V Symbol IR CO Min Typ. 0.1 25 Max 1.5 10 Unit A pF

Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage (IL66) Leakage current, collectoremitter Capacitance, collector-emitter Test condition = 1.0 mA, 10 A VCE = 0 VCE 10 V Symbol BVCEO BVCBO ICEO Min Typ. Max Unit nA pF

Parameter Saturation voltage, collectoremitter Test condition = 10 mA, 10 mA Symbol VCEsat Min Typ. 0.9 Max 1.0 Unit V

Parameter Current Transfer Ratio Test condition = 2.0 mA, VCE = 0.7 mA, VCE = 2.0 mA, VCE 5.0 V Part IL(D,Q)66-3 IL(D,Q)66-4 Symbol CTR Min Typ. Max Unit


 

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