|
Details, datasheet, quote on part number:TPS2015
| |
| Part: | TPS2015 |
| Category: | Analog & Mixed-Signal Processing => Switches & Multiplexers => Analog Switches => Switch/Driver Combo |
| Description: | Power Distribution Switches |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download TPS2015 datasheet File size : 440 kB |
| Request For quote: | Find where to buy TPS2015
|
| |
Datasheet text preview:
TPS2014, TPS2015 POWER DISTRIBUTION SWITCHES
SLVS159B DECEMBER 1996 REVISED AUGUST 1997
D D D D D D D D D D D
95-m Maximum (5-V Input) High-Side MOSFET Switch Short-Circuit Protection and Thermal Protection Logic Overcurrent Output 4-V to 7-V Operating Range Enable Input Compatible With 3-V and 5-V Logic Controlled Rise and Fall Times Limit Current Surges and Minimize EMI Undervoltage Lockout Ensures That Switch is Off at Start-Up 10-µA Maximum Standby Current Available in Space-Saving 8-Pin SOIC and 8-Pin PDIP 0°C to 125°C Operating Junction Temperature Range 12-kV Output, 6-kV Input ElectrostaticDischarge Protection
D OR P PACKAGE (TOP VIEW)
GND IN IN EN
1 2 3 4
8 7 6 5
OUT OUT OUT OC
description
The TPS2014 and TPS2015 power distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The high-side switch is a 95-m n-channel MOSFET. The switch is controlled by a logic enable that is compatible with 3-V and 5-V logic. Gate drive is provided by an internal charge pump designed to control the power switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 4 V. When the output load exceeds the current-limit threshold or a short is present, the TPS20xx limits the output current to a safe level by switching into a constant-current mode, and the overcurrent logic output is set to low. Continuous heavy overloads and short circuits will increase the power dissipation in the switch and cause the junction temperature to rise. A thermal protection circuit is implemented, which shuts the switch off to prevent damage when the junction temperature exceeds its thermal limit. An undervoltage lockout is provided to ensure the switch is in the off state at start-up. The TPS2014 and TPS2015 differ only in short-circuit current limits. The TPS2014 is designed to limit at 1.2 A load and the TPS2015 limits at 2 A (see the available options table). The TPS20xx is available in 8-pin small-outline integrated circuit (SOIC) and 8-pin PDIP packages, and operates over a junction temperature range of 0°C to 125°C.
AVAILABLE OPTIONS TA 0°C TO 85°C TO 85°C RECOMMENDED MAXIMUM MAXIMUM CONTINUOUS LOAD CURRENT 0.6 A 1A TYPICAL SHORT-CIRCUIT SHORT CIRCUIT CURRENT LIMIT AT 25°C 1.2 A 2A PACKAGED DEVICES SOIC (D) TPS2014D TPS2015D PDIP (P) TPS2014P TPS2015P CHIP FORM FORM (Y) TPS2014Y TPS2015Y
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2014DR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
1
TPS2014, TPS2015 POWER DISTRIBUTION SWITCHES
SLVS159B DECEMBER 1996 REVISED AUGUST 1997
functional block diagram
Power Switch IN Charge Pump Current Limit CS OUT
OC Driver
EN
UVLO Thermal Sense
GND Current Sense
TPS20xxY chip information
This chip, when properly assembled, displays characteristics similar to those of the TPS20xx. Ultrasonic bonding may be used on the doped aluminium bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS (1)
(8) (1) (2) (3) TPS20xxY (8) (7) OUT (6) (5) OUT OC
GND IN (2) IN EN 91 (3)
OUT
(4)
(7)
CHIP THICKNESS: 15 TYPICAl BONDING PADS: 4 × 4 MINIMUM
(6) (4) 74 (5)
TJ max = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS.
2
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TPS2014, TPS2015 POWER DISTRIBUTION SWITCHES
SLVS159B DECEMBER 1996 REVISED AUGUST 1997
Terminal Functions
TERMINAL NAME EN GND IN OC OUT NO. 4 1 2, 3 5 68 I/O I I I O O DESCRIPTION Enable input. Logic low at EN turns the power switch on. Ground Input voltage OC is asserted active low during a fault condition. Power switch output
detailed description
power switch The power switch is an n-channel MOSFET with a maximum on-state resistance of 95 m (VI(IN) = 5 V), configured as a high-side switch. charge pump An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 4 V and requires very little supply current. driver The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range instead of the microsecond or nanosecond range for a standard FET. enable (EN) A logic high on EN turns off the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10 µA. A logic zero input restores bias to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS logic levels. overcurrent (OC) OC is an open-drain logic output that is asserted (active low) when an overload or short circuit is encountered. The output remains asserted until the overload or short-circuit condition is removed. current sense A sense FET monitors the current supplied to the load. The sense FET provides a much more efficient way to measure current than conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into its linear region, which switches the output into a constant current mode and simply holds the current constant while varying the voltage on the load. thermal sense An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately to 180°C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed. undervoltage lockout An internal voltage sense monitors the input voltage. When the input voltage is below 3.2 V nominal, a control signal turns off the power switch.
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
3
|
|
