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Details, datasheet, quote on part number:TPS2012DR
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| Part: | TPS2012DR |
| Category: | Power Management => Power Distribution/Switches => Current Sensing => Current Limited Switches |
| Description: | ti TPS2012, 2.0A, 2.7 to 5.5V Single High-side MOSFET Switch IC, no Fault Reporting, Active-low Enable |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download TPS2012DR datasheet File size : 376 kB |
| Request For quote: | Find where to buy TPS2012DR
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Datasheet text preview:
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION
SLVS097A DECEMBER 1994 REVISED AUGUST 1995
D D D D D D D D D D
95-m Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.6 A, TPS2013 Electrostatic-Discharge Protection, 12-kV Output, 6-kV All Other Terminals Controlled Rise and Fall Times to Limit Current Surges and Minimize EMI SOIC-8 Package Pin Compatible With the Popular LittlefootTM Series When GND Is Connected 2.7-V to 5.5-V Operating Range 10-µA Maximum Standby Current Surface-Mount SOIC-8 and TSSOP-14 Packages 40°C to 125°C Operating Junction Temperature Range
D PACKAGE (TOP VIEW)
GND IN IN EN
1 2 3 4
8 7 6 5
OUT OUT OUT OUT
PW PACKAGE (TOP VIEW)
GND IN IN IN IN IN EN
1 2 3 4 5 6 7
14 13 12 11 10 9 8
OUT OUT OUT OUT OUT OUT OUT
description
The TPS201x family of power-distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The high-side switch is a 95-m N-channel MOSFET. Gate drive is provided by an internal driver and charge pump designed to control the power switch rise times and fall times to minimize current surges during switching. The charge pump operates at 100 kHz, requires no external components, and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit threshold or a short circuit is present, the TPS201x limits the output current to a safe level by switching into a constant-current mode. Continuous heavy overloads and short circuits increase power dissipation in the switch and cause the junction temperature to rise. If the junction temperature reaches approximately 180°C, a thermal protection circuit shuts the switch off to prevent damage. Recovery from thermal shutdown is automatic once the device has cooled sufficiently. The members of the TPS201x family differ only in short-circuit current threshold. The TPS2010 is designed to limit at 0.4-A load; the other members of the family limit at 1.2 A, 2 A, and 2.6 A (see the available options table). The TPS201x family is available in 8-pin small-outline integrated circuit (SOIC) and 14-pin thin shink small-outline (TSSOP) packages and operates over a junction temperature range of 40°C to 125°C. Versions in the 8-pin SOIC package are drop-in replacements for Siliconix's LittlefootTM power PMOS switches, except that GND must be connected.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION
SLVS097A DECEMBER 1994 REVISED AUGUST 1995
AVAILABLE OPTIONS TJ RECOMMENDED MAXIMUM CONTINUOUS LOAD CURRENT (A) 0.2 40°C to 125°C to 125°C 0.6 1 TYPICAL SHORT-CIRCUIT OUTPUT CURRENT LIMIT AT 25°C (A) 0.4 1.2 2 PACKAGED DEVICES SOIC (D) TPS2010D TPS2011D TPS2012D TSSOP (PW) TPS2010PWLE TPS2011PWLE TPS2012PWLE CHIP FORM (Y) TPS2010Y TPS2011Y TPS2012Y
1.5 2.6 TPS2013D TPS2013PWLE TPS2013Y The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR). The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS2010PWLE).
functional block diagram
Power Switch
IN Charge Pump
CS
OUT
EN GND
Driver
Current Limit
Thermal Sense
Current sense
Terminal Functions
TERMINAL NAME EN GND IN OUT NO. D 4 1 2, 3 58 PW 7 1 26 8 14 I I I O Enable input. Logic low turns power switch on. Ground Input voltage Power-switch output I/O DESCRIPTION
detailed description
power switch The power switch is an N-channel MOSFET with a maximum on-state resistance of 95 m (VI(IN) = 5.5 V), configured as a high-side switch. charge pump An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current.
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POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION
SLVS097A DECEMBER 1994 REVISED AUGUST 1995
detailed description (continued)
driver The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range instead of the microsecond or nanosecond range for a standard FET. enable (EN) A logic high on the EN input turns off the power switch and the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10 µA. A logic zero input restores bias to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS logic levels. current sense A sense FET monitors the current supplied to the load. The sense FET is a much more efficient way to measure current than conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into its linear region, which switches the output into a constant current mode and simply holds the current constant while varying the voltage on the load. thermal sense An internal thermal-sense circuit shuts the power switch off when the junction temperature rises to approximately 180°C. Hysteresis is built into the thermal sense, and after the device has cooled approximately 20 degrees, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
TPS201xY chip information
This chip, when properly assembled, displays characteristics similar to the TPS201xC. Thermal compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be mounted with conductive epoxy or a gold-silicon preform.
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· DALLAS, TEXAS 75265
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