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Details, datasheet, quote on part number:TPIC6B595
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Datasheet text preview:
TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER
SLIS032 JULY 1995
D D D D D D D
Low rDS(on) . . . 5 Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Devices Are Cascadable Low Power Consumption
DW OR N PACKAGE (TOP VIEW)
description
The TPIC6B595 is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other mediumcurrent or high-voltage loads. This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage registers on the rising edge of the shift-register clock (SRCK) and the register clock (RCK), respectively. The storage register transfers data to the output buffer when shiftregister clear (SRCLR) is high. When SRCLR is low, the input shift register is cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOStransistor outputs have sink-current capability. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices.
NC VCC SER IN DRAIN0 DRAIN1 DRAIN2 DRAIN3 SRCLR G GND
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
NC GND SER OUT DRAIN7 DRAIN6 DRAIN5 DRAIN4 SRCK RCK GND
NC No internal connection
logic symbol
G RCK SRCLR SRCK SER IN 9 12 8 13 3 R EN3 C2 SRG8 C1 1D 2 4 5 6 7 14 15 16 17 2 18 DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 SER OUT
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sinkcurrent capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit decreases as the junction temperature increases for additional device protection. The TPIC6B595 is characterized for operation over the operating case temperature range of 40°C to 125°C.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
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TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER
SLIS032 JULY 1995
logic diagram (positive logic)
G RCK SRCLR SRCK SER IN 9 12 8 D 13 C1 CLR 3 D C1 CLR D C2 6 DRAIN2 D C2 5 DRAIN1 4
DRAIN0
D C1 CLR
D C2 7 DRAIN3
D C1 CLR
D C2 14 DRAIN4
D C1 CLR
D C2 15 DRAIN5
D C1 CLR
D C2 16 DRAIN6
D C1 CLR
D C2 17 DRAIN7
D C1 CLR
D C2 10, 11, 19 18 GND
SER OUT
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POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TPIC6B595 POWER LOGIC 8-BIT SHIFT REGISTER
SLIS032 JULY 1995
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT VCC TYPICAL OF ALL DRAIN OUTPUTS
DRAIN 50 V
Input 25 V 12 V 20 V
GND GND
absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)
Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration 100 µs and duty cycle 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE DW N TC 25°C POWER RATING 1389 mW 1050 mW DERATING FACTOR ABOVE TC = 25°C 11.1 mW/°C 10.5 mW/°C TC = 125°C POWER RATING 278 mW 263 mW
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
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