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Details, datasheet, quote on part number:TPIC6B273DWR
 
 
Part:TPIC6B273DWR
Category:Power Management => Power Monitoring => Control and Monitoring->Power+ Logic
Description:ti TPIC6B273, Octal D-type Latch
Company:Texas Instruments, Inc.
Datasheet:Download TPIC6B273DWR datasheet   File size : 134 kB
Request For quote:  Find where to buy TPIC6B273DWR
 



Datasheet text preview:
TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 ­ APRIL 1994 ­ REVISED JULY 1995
D D D D D D
Low rDS(on) . . . 5 Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability Output Clamp Voltage . . . 50 V Low Power Consumption
DW OR N PACKAGE (TOP VIEW)
description
The TPIC6B273 is a monolithic, high-voltage, medium-current, power logic octal D-type latch with DMOS-transistor outputs designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other medium-current or high-voltage loads. The TPIC6B273 contains eight positive-edgetriggered D-type flip-flops with a direct clear input. Each flip-flop features an open-drain power DMOS-transistor output. When clear (CLR) is high, information at the D inputs meeting the setup time requirements is transferred to the DRAIN outputs on the positivegoing edge of the clock (CLK) pulse. Clock triggering occurs at a particular voltage level and is not directly related to the transition time of the positive-going pulse. When the clock input (CLK) is at either the high or low level, the D input signal has no effect at the output. An asynchronous CLR is provided to turn all eight DMOS-transistor outputs off. When data is low for a given output, the DMOS-transistor output is off. When data is high, the DMOS-transistor output has sink-current capability. Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sink-current capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit decreases as the junction temperature increases for additional device protection.
CLR D1 D2 DRAIN1 DRAIN2 DRAIN3 DRAIN4 D3 D4 GND
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
VCC D8 D7 DRAIN8 DRAIN7 DRAIN6 DRAIN5 D6 D5 CLK
logic symbol
CLR CLK D1 D2 D3 D4 D5 D6 D7 D8 1 11 2 3 8 9 12 13 18 19 R C1 1D 4 5 6 7 14 15 16 17 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 DRAIN8
This symbol is in accordance with ANSI/IEEE Standard 91-1984 and IEC Publication 617-12. FUNCTION TABLE (each channel) INPUTS CLR L H H H CLK X L D X H L X OUTPUT DRAIN H L H Latched
H = high level, L = low level, X = irrelevant
The TPIC6B273 is characterized for operation over the operating case temperature range of ­ 40°C to 125°C.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1997, Texas Instruments Incorporated
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TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 ­ APRIL 1994 ­ REVISED JULY 1995
logic diagram (positive logic)
4 1 2 11 DRAIN1
CLR D1 CLK
CLR 1D C1 5
DRAIN2
CLR D2 3 1D C1 6
DRAIN3
CLR D3 8 1D C1 7
DRAIN4
CLR D4 9 1D C1 14
DRAIN5
CLR D5 12 1D C1 15
DRAIN6
CLR D6 13 1D C1 16
DRAIN7
CLR D7 18 1D C1 17
DRAIN8
CLR D8 19 1D C1 10
GND
2
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· DALLAS, TEXAS 75265
TPIC6B273 POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 ­ APRIL 1994 ­ REVISED JULY 1995
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT VCC TYPICAL OF ALL DRAIN OUTPUTS
DRAIN 50 V
Input 25 V 12 V 20 V
GND
GND
absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)
Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­ 0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA Continuous drain current, each output, all outputs on, ID, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA Peak drain current single output, IDM,TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­ 40°C to 150°C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­ 40°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­ 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration 100 µs and duty cycle 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4). DISSIPATION RATING TABLE PACKAGE DW N TC 25°C POWER RATING 1389 mW 1050 mW DERATING FACTOR ABOVE TC = 25°C 11.1 mW/°C 10.5 mW/°C TC = 125°C POWER RATING 278 mW 263 mW
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