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Details, datasheet, quote on part number:TPA112DR
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| Part: | TPA112DR |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Audio/Power Amplifiers |
| Description: | ti TPA112, 150 MW Stereo Audio Power Amplifier |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download TPA112DR datasheet File size : 479 kB |
| Request For quote: | Find where to buy TPA112DR
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Datasheet text preview:
TPA112 150-mW STEREO AUDIO POWER AMPLIFIER
SLOS212D AUGUST 1998 REVISED OCTOBER 2002
D D D D D
150-mW Stereo Output Wide Range of Supply Voltages Fully Specified for 3.3 V and 5 V Operation Operational From 2.5 V to 5.5 V Thermal and Short-Circuit Protection Surface-Mount Packaging PowerPAD MSOP SOIC Standard Operational Amplifier Pinout
D OR DGN PACKAGE (TOP VIEW)
VO 1 IN1 IN1+ GND
1 2 3 4
8 7 6 5
VDD VO 2 IN2 IN2+
description
The TPA112 is a stereo audio power amplifier packaged in an 8-pin PowerPAD MSOP package capable of delivering 150 mW of continuous RMS power per channel into 8- loads. Amplifier gain is externally configured by means of two resistors per input channel and does not require external compensation for settings of 1 to 10. THD+N when driving an 8- load from 5 V is 0.1% at 1 kHz, and less than 2% across the audio band of 20 Hz to 20 kHz. For 32- loads, the THD+N is reduced to less than 0.06% at 1 kHz, and is less than 1% across the audio band of 20 Hz to 20 kHz. For 10-k loads, the THD+N performance is 0.01% at 1 kHz, and less than 0.02% across the audio band of 20 Hz to 20 kHz.
functional block diagram
RF
VDD Short-Circuit Protection CI LIN CI LIN+ RF VDD/2 CI RIN CI RIN+ Over-Temperature Protection RI RF 6 5 RI IN2 IN2+ 2 RI 3 IN1 IN1+ VO1 RI
8
VDD
1 RO
CC RC To Headphone Jack (See TPA152)
VO2
7 RO
CC RC
4
RF Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 2002, Texas Instruments Incorporated
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
1
TPA112 150-mW STEREO AUDIO POWER AMPLIFIER
SLOS212D AUGUST 1998 REVISED OCTOBER 2002
AVAILABLE OPTIONS PACKAGED DEVICES TA SMALL OUTLINE (D) MSOP (DGN) MSOP Symbolization
40°C to 85°C TPA112D TPA112DGN TI AAD The D and DGN package is available in left-ended tape and reel only (e.g., TPA112DR, TPA112DGNR).
Terminal Functions
TERMINAL NAME GND IN1 IN1+ IN2 IN2+ VDD VO1 VO2 NO. 4 2 3 6 5 8 1 7 I/O I I I I I I O O GND is the ground connection. IN1 is the inverting input for channel 1. IN1+ is the noninverting input for channel 1. IN2 is the inverting input for channel 2. IN2+ is the noninverting input for channel 2. VDD is the supply voltage terminal. VO1 is the audio output for channel 1. VO2 is the audio output for channel 2. DESCRIPTION
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Differential input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to VDD + 0.3 V Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±2.5 µA Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±250 mA Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . internally limited Operating junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. DISSIPATION RATING TABLE PACKAGE D DGN TA 25°C POWER RATING 725 mW 2.14 W DERATING FACTOR ABOVE TA = 25°C 5.8 mW/°C 17.1 mW/°C TA = 70°C POWER RATING 464 mW 1.37 W TA = 85°C POWER RATING 377 mW
1.11 W Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report (SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB layout based on the information in the section entitled Texas Instruments Recommended Board for PowerPAD on page 33 of that document.
recommended operating conditions
MIN Supply voltage, VDD Operating free-air temperature, TA 2.5 40 MAX 5.5 85 UNIT V °C
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POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TPA112 150-mW STEREO AUDIO POWER AMPLIFIER
SLOS212D AUGUST 1998 REVISED OCTOBER 2002
dc electrical characteristics at TA = 25°C, VDD = 3.3 V
PARAMETER VOO PSRR IDD(q) ZI Output offset voltage Power supply rejection ratio Supply current Input impedance VDD = 3.2 V to 3.4 V 83 1.5 >1 3 TEST CONDITIONS MIN TYP MAX 10 UNIT mV dB mA M
ac operating characteristics, VDD = 3.3 V, TA = 25°C, RL = 8
PARAMETER PO THD+N BOM SVRR SNR Output power (each channel) Total harmonic distortion + noise Maximum output power BW Phase margin Supply ripple rejection Channel/channel output separation Signal-to-noise ratio Vn Noise output voltage Measured at 1 kHz TEST CONDITIONS THD 0.1% PO = 70 mW, G = 10, Open loop f = 1 kHz f = 1 kHz PO = 100 mW 2020 kHz THD 20 58° 68 86 100 9.5 dB dB dB µV(rms) kHz MAX UNIT mW
dc electrical characteristics at TA = 25°C, VDD = 5 V
PARAMETER VOO PSRR IDD(q) ZI Output offset voltage Power supply rejection ratio Supply current Input impedance VDD = 4.9 V to 5.1 V 76 1.5 >1 3 TEST CONDITIONS MIN TYP MAX 10 UNIT mV dB mA M
ac operating characteristics, VDD = 5 V, TA = 25°C, RL = 8
PARAMETER PO THD+N BOM SVRR SNR Output power (each channel) Total harmonic distortion + noise Maximum output power BW Phase margin Supply ripple rejection Channel/channel output separation Signal-to-noise ratio Vn Noise output voltage Measured at 1 kHz TEST CONDITIONS THD 0.1% PO = 150 mW, G = 10, Open loop f = 1 kHz f = 1 kHz PO = 150 mW 2020 kHz THD 20 56° 68 86 100 9.5 dB dB dB µV(rms) kHz MAX UNIT mW
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
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