|Category||Analog & Mixed-Signal Processing => Amplifiers => High Speed/Video Amplifiers => Current Feedback|
|Description||ti BUF600, High-speed Buffer Amplifier|
|Company||Texas Instruments, Inc.|
|Datasheet||Download BUF600AP datasheet
q OPEN-LOOP BUFFER q HIGH-SLEW RATE: 5.0Vp-p q BANDWIDTH: 0.2Vp-p q LOW INPUT BIAS CURRENT: 0.7µA/1.5µA q LOW QUIESCENT CURRENT: 3mA/6mA q GAIN FLATNESS: to 300MHzAPPLICATIONS
q VIDEO BUFFER/LINE DRIVER q INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT q PORTABLE SYSTEMS q TRANSMISSION SYSTEMS q TELECOMMUNICATIONS q HIGH-SPEED ANALOG SIGNAL PROCESSING q ULTRASOUNDDESCRIPTION
The BUF600 and BUF601 are monolithic open-loop unity-gain buffer amplifiers with a high symmetrical slew rate to 3600V/µs and a very wide bandwidth at 5Vp-p output swing. They use a complementary bipolar IC process, which incorporates pn-junction isolated high-frequency NPN and PNP transistors to achieve high-frequency performance previously unattainable with conventional integrated circuit technology. Their unique design offers a high-performance alternative to expensive discrete or hybrid solutions. The BUF600 and BUF601 feature low quiescent current, low input bias current, small signal delay time and phase shift, and low differential gain and phase errors. The BUF600 with 3mA quiescent current is wellsuited for operation between high-frequency processing stages. It demonstrates outstanding performance even in feedback loops of wide-band amplifiers or phase-locked loop systems.
The BUF601, with 6mA quiescent current and therefore lower output impedance, can easily drive 50 inputs or 75 systems and cables. The broad range of analog and digital applications extends from decoupling of signal processing stages, impedance transformation, and input amplifiers for RF equipment and ATE systems to video systems, distribution fields, IF/communications systems, and output drivers for graphic cards.
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At VCC = ±5V, RLOAD = 10k, RSOURCE = 50, and TAMB = +25°C, unless otherwise noted. BUF600AP, AU PARAMETER INPUT OFFSET VOLTAGE Initial vs Temperature vs Supply (tracking) vs Supply (non-tracking) vs Supply (non-tracking) INPUT BIAS CURRENT Initial vs Temperature vs Supply (tracking) vs Supply (non-tracking) vs Supply (non-tracking) INPUT IMPEDANCE INPUT NOISE Voltage Noise Density Signal-to-Noise Ratio TRANSFER CHARACTERISTICS to 100MHz S/N = 20 Log (0.7/(Vn 5MHz)) Voltage Gain; VIN = ±2.5V RLOAD = 100 RLOAD = 200 RLOAD = 10k RATED OUTPUT Voltage Output VIN = ±2.7V RLOAD = 100 RLOAD = 200 DC, RLOAD V/V CONDITIONS MIN TYP MAX ±30 54 MIN BUF601AU TYP MAX ±30 UNITS mV µV/°C dB µA nA/°C µ A/V µ A/V nA/V M pF nV/ Hz dB
DC Current Output Impedance POWER SUPPLY Rated Voltage Derated Performance Quiescent Current TEMPERATURE RANGE Specification Storage
At VCC = ±5V, RLOAD 200 (BUF600) and 100 (BUF601), RSOURCE = 50, and TAMB = +25°C, unless otherwise noted. BUF600AP, AU PARAMETER FREQUENCY DOMAIN LARGE SIGNAL BANDWIDTH (3dB) SMALL SIGNAL BANDWIDTH GROUP DELAY TIME DIFFERENTIAL GAIN VIN 0.7V BUF600 RLOAD = 200 RLOAD 1k BUF601 RLOAD = 100 RLOAD = 500 VIN 0.7V BUF600 RLOAD = 200 RLOAD 1k BUF601 RLOAD = 100 RLOAD = 5Vp-p, COUT = 2.8Vp-p, COUT = 1.4Vp-p, COUT = 0.2Vp-p, COUT = 1pF MHz ps CONDITIONS MIN TYP MAX MIN BUF601AU TYP MAX UNITS
At VCC = ±5V, RLOAD 200 (BUF600) and 100 (BUF601), RSOURCE = 50, and TAMB +25° C, unless otherwise noted. BUF600AP, AU PARAMETER HARMONIC DISTORTION Second Harmonic Third Harmonic Second Harmonic Third Harmonic Second Harmonic Third Harmonic GAIN FLATNESS PEAKING to 300MHz LINEAR PHASE DEVIATION to 300MHz TIME DOMAIN RISE TIME 700ps 1.4Vp-p Step 2.8Vp-p Step 5.0Vp-p Step 5.0Vp-p ns V/µs Degrees dB CONDITIONS = 1.4Vp-p MIN TYP MAX MIN BUF601AU TYP MAX UNITS dBc
FUNCTION In Out +VCC VCC DESCRIPTION Analog Input Analog Output Positive Supply Voltage; typical +5VDC Negative Supply Voltage; typical 5VDC
This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Power Supply Voltage.......................................................................... ±6V Input Voltage(1)......................................................................... ±VCC ±0.7V Operating Temperature..................................................... to +85°C Storage Temperature...................................................... to +125°C Junction Temperature.................................................................... +150°C Lead Temperature (soldering, 10s)................................................ +300°C NOTE: (1) Inputs are internally diode-clamped to ±VCC.PACKAGE Plastic 8-Pin DIP SO-8 Surface Mount SO-8 Surface Mount
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
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