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Details, datasheet, quote on part number:TP0604WG
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| Part: | TP0604WG |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Arrays->P-Channel |
| Description: | Enhancement Mode MOSFET Array (includes Low Threshold MOSFET) |
| Company: | Supertex, Inc. |
| Datasheet: | Download TP0604WG datasheet File size : 55 kB |
| Request For quote: | Find where to buy TP0604WG
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Datasheet text preview:
TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array
Ordering Information
BVDSS / BVDGS -40V * Same as SO-20 with 300 mil wide body. RDS (ON) Max 2.0 Order Number / Package SOW-20* TP0604WG
Features
4 independent channels 4 electrically isolated die Commercial and Military versions available Free from secondary breakdown Low power drive requirement Low CISS and fast switching speeds High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) DMOS FET arrays utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex quad arrays use four independent DMOS transistors. They are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Telecom switches Logic level interfaces Battery operated systems Photo voltaic drives Soild state relays Motor controls
Pin Configuration
D1 D1 D1 G1 S1 S2 G2 D2 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
1
2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11
D4 D4 D4 G4 S4 S3 G3 D3 D3 D3
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
D2 D2
top view SOW - 20
02/26/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TP0604WG
Thermal Characteristics
Package SOW-20 ID (continuous)* (single die) -0.6A ID (pulsed) -2.0A Power Dissipation @ TA = 25°C 1.5W
j c
j a
°C/W
--
°C/W
84
IDR* (single die) -0.6A
I DRM -2.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -40 -1.0 -3.0 -2.4 -4.5 -100 -10 -1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -0.4 -2.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.4 -0.6 -3.3 2.0 1.5 0.75 0.6 95 85 35 5.0 7.0 10 6.0 -1.3 300 150 120 60 8 18 15 19 -2.0 V ns VGS = 0V, ISD = -1.5A VGS = 0V, ISD = -1.5A ns VDD = -20V ID = -1.0A RGEN = 25 pF VGS = 0V, VDS = -20V f = 1 MHz 3.5 2.0 1.2 %/°C Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = -2.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -20V VGS = -10V, VDS = -20V VGS = -5V, ID = -250mA VGS = -10V, ID = -1.0A VGS = -10V, ID = -1.0A VDS = -20V, ID = -1.0A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON) Rgen
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VDD
90% 10%
10%
2
D.U.T. OUTPUT RL
VDD
TP0604WG
Typical Performance Curves
Output Characteristics
-5 -5
Saturation Characteristics
-4 VGS = -10V -3 -9V -2 -8V -7V -1 -6V -5V 0 0 -10 -20 -30 -40 -50 -4V
-4 VGS = -10V
ID (amperes)
ID (amperes)
-3 -9V -2 -8V -7V -1 -6V -5V -4V 0 0 -2 -4 -6 -8 -10
VDS (volts) Transconductance vs. Drain Current
1.0 2
VDS (volts) Power Dissipation vs. Ambient Temperature
VDS = -25V
0.8
TA= -55°C
1.6 SOW-20
GFS (siemens)
TA = 25°C
TA = 150°C
0.4
PD (watts)
-3
0.6
1.2
0.8
0.2
0.4
0 0 -1 -2
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10
TA (°C)
S O W - 2 0 (pulsed) -1.0 S O W - 2 0 (DC)
ID (amperes)
-0.1
-0.01 -0.1
T A =25°C -1 -10 -100
VDS (volts)
3
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