Details, datasheet, quote on part number: R531
PartR531
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => N-Channel
DescriptionN-channel Enhancement-mode Vertical Dmos Power Fets
CompanySupertex, Inc.
DatasheetDownload R531 datasheet
  
Some Part number from the same manufacture Supertex, Inc.
R9521 P-channel Enhancement-mode Vertical Dmos Power Fets
R9522
R9523
RBHV5308DJ 32-channel Serial to Parallel Converter With High Voltage Push-pull Outputs
RBHV5408DJ
RBHV57009DG 64-channel Serial to Parallel Converter With P-channel Open Drain Controllable Output Current
RBHV57708DG 32 Mhz, 64-channel Serial to Parallel Converter With Push-pull Outputs
RBHV57908DG 8 Mhz, 64-channel Serial to Parallel Converter With Push-pull Outputs
RBHV7022DJ-C 34-channel Symmetric Row Driver
RBHV7224DG 40-channel Symmetric Row Driver
SD2
SD4
SR03
TC0604
TC2320 Enhancement Mode MOSFET Array (includes Low Threshold MOSFET)
TC6320
TD9944
TN0104 Enhancement Mode MOSFET (includes Low Threshold MOSFET)
TN0106
TN0110
TN0520

HV9605X :

HV9901NG : Universal Relay Driver

TP0104N3 :

TP0606N3 : Enhancement Mode MOSFET (includes Low Threshold MOSFET)

VN0645 :

TP5335_07 : P-channel Enhancement-mode Vertical DMOS FET

LND150N8-G : MOSFET 500V 1KOhm Specifications: Manufacturer: Supertex ; Product Category: MOSFET ; RoHS:  Details ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 500 V ; Gate-Source Breakdown Voltage: +/- 20 V ; Continuous Drain Current: 30 mA ; Resistance Drain-Source RDS (on): 1 K Ohms ; Configuration: S

TN2106K1-G : MOSFET 60V 2.5Ohm Specifications: Manufacturer: Supertex ; Product Category: MOSFET ; RoHS:  Details ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 60 V ; Gate-Source Breakdown Voltage: +/- 20 V ; Continuous Drain Current: 0.28 A ; Resistance Drain-Source RDS (on): 2.5 Ohms ; Configuration: S

Same catergory

CM100E3U-24H : Type = Igbt Module ;; Voltage = 1200V ;; Current = 100A ;; Circuit Configuration = Chopper, Buck, Boost ;; Recommended For Designs =   ;; Switching Loss Curves =.

FMM75-01F : Phase-leg / Half Bridge MOSFET Modules. MOSFETs Symbol VDSS VGS IF25 IF90 dv/dt EAR Symbol = 90C (diode) = 25C (diode) = 90C VDS < VDSS; 2 W TVJ = 25C Conditions TVJ to 150C Maximum Ratings V/ns mJ HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode ISOPLUS.

GT5G103 : Low Voltage < 600 Volts. Silicon N-channel MOS Type Insulated Gate Bipolar Transistor For Strobe Flash Applications.

KSA916 : PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings Units mW C Symbol BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Base.

MOC205 : Small Outline Optocouplers Transistor Output. These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting. U.L. Recognized (File #E90700, Volume 2) VDE Recognized.

TC7920 : Two Pair, N- And P-Channel Enhancement-Mode MOSFET With Drain-Diodes The Supertex TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high.

0805YC681J4T2A : CAPACITOR, CERAMIC, MULTILAYER, 16 V, X7R, 0.00068 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 6.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 16 volts ; Mounting Style:.

BFR101A : 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; V(BR)DSS: 30 volts ; PD: 200 milliwatts ; Number of units in IC: 1.

GR442Q : CAPACITOR, CERAMIC, MULTILAYER, 2000 V, SURFACE MOUNT, 1808. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

PHP3055ET/R : 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1500 ohms ; Package Type: PLASTIC, SC-46, 3 PIN ; Number of units in IC: 1.

PT010EB101 : PULSE TRANSFORMER FOR THYRISTOR TRIGGER APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -10 to 70 C (14 to 158 F) ; Standards: RoHS.

SBRD8350RLG : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

SHD116134A : 7.5 A, SILICON, RECTIFIER DIODE. s: Configuration: Single ; Package: HERMETIC SEALED, SHD-1A, 2 PIN ; Pin Count: 1 ; Number of Diodes: 1 ; IF: 7500 mA.

VG082 : RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.3 W, 100 ohm - 1000000 ohm. s: Potentiometer Type: Trimmer ; Resistance Taper: Linear ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole ; Operating Temperature: -25 to 70 C (-13 to 158 F).

3612T056J : 1 ELEMENT, 0.056 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0560 microH ; Rated DC Current: 450 milliamps ; Operating.

500F15 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

744312100 : 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 1 microH ; Rated DC Current: 11000 milliamps ; Operating Temperature: -40 to 150 C (-40 to 302 F).

 
0-C     D-L     M-R     S-Z