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Details, datasheet, quote on part number:TPDV840
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Datasheet text preview:
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TPDV640 ---> TPDV1240
ALTERNISTORS
FEATURES High commutation: > 142A/ms (400Hz) Insulating voltage = 2500V(RMS) (UL Recognized: EB81734) High voltage capability: VDRM = 1200V
s s s
A2
G A1
DESCRIPTION The TPDV640 ---> TPDV1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)
A1 A2 G
TOP3
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) I2t value Critical rate of rise of on-state current Gate supply: IG = 500mA dIG/dt = 1A/µs Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 75°C tp = 2.5ms tp = 8.3ms tp = 10ms I2t dI/dt tp = 10ms Repetitive F = 50Hz Non repetitive Tstg Tj Tl Value 40 590 370 350 610 20 100 -40 to +150 -40 to +125 260 °C °C A2s A/µs Unit A A
TPDV Symbol VDRM VRRM Parameter 640 Repetitive peak off-state voltage Tj = 125°C 600 840 800 1040 1000 1240 1200 V Unit
September 2001 - Ed: 1A
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TPDV640 ---> TPDV1240
THERMAL RESISTANCES
Symbol Rth (j-a) Rth (j-c) DC Rth (j-c) AC Contact to ambient Junction to case for DC Junction to case for 360° conduction angle (F = 50Hz) Parameter Value 50 1.2 0.9 Unit °C/W °C/W °C/W
GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 8A (tp = 20µs)
VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS
Symbol IGT VGT VGD tgt IL VD = 12V (DC) VD = 12V (DC) VD = VDRM Test conditions RL = 33 RL = 33 RL = 3.3k Tj = 25°C Tj = 25°C Tj =125°C Tj = 25°C Tj = 25°C Quadrant I - II - III I - II - III I - II - III I - II - III I - III II IH* VTM* IDRM IRRM dV/dt * (dI/dt)c* IT = 500mA Gate open ITM = 60A VDRM rated VRRM rated Linear slope up to VD = 67% VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs tp = 380µs Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C TYP. MAX. MAX. MAX. MIN. MIN. MAX. MAX. MIN. TYP. TYP. Value 200 1.5 0.2 2.5 100 200 50 1.8 0.02 8 500 35 142 V/µs A/ms mA V mA Unit mA V V µs mA
VD = VDRM IG = 500mA dIG/dt = 3A/µs IG = 1.2IGT
* For either polarity of electrode A2 voltage with reference to electrode A1.
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TPDV640 ---> TPDV1240
Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2: Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact.
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance versus pulse duration.
Zt h / R t h 1.00
Z t h( j - c )
0.10
Zt h ( j - a )
0.01
tp(s)
1E -3
1 E -2
1E -1
1E+0
1E+1
1E+2
1E+3
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
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