|
Details, datasheet, quote on part number:TPA120B-12
| |
Datasheet text preview:
®
TPA SERIES
FEATURES
n BIDIRECTIONAL CROWBAR PROTECTION. n VOLTAGE RANGE: FROM 62 V TO 270 V. n HOLDING CURRENT :
IH = 150mA min.
n REPETITIVE PEAK PULSE CURRENT :
IPP = 50 A, 10/1000 µs.
DO-15 DESCRIPTION The TPA series are TRISIL devices especially designed for protecting sensitive telecommunication equipment against lightning and transient voltages induced by AC power lines. They are available in the DO-15 axial package. TRISIL devices provide bidirectional protection by crowbar action. Their characteristic response to transient overvoltages makes them particularly suited to protect voltage sensitive telecommunication equipment. COMPLIES WITH THE FOLLOWING STANDARDS: (CCITT) ITU-K20 (CCITT) ITU-K17 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24
February 2003 - Ed: 10A
SCHEMATIC DIAGRAM
Peak Surge Voltage (V) 1000 1500 2000 2000 level 3 level 4 1500 800 1000 2500 1000 5000 1000
Voltage Waveform (µs) 10/700 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 0.5/700
Current Waveform (µs) 5/310 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310
Admissible Ipp (A) 25 38 50 50 50 100 75 55 25 150 50 150 25
Necessary Resistor () 12.5 6.5 11.5 10 11.5 1/5
TPA SERIES
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol P IPP ITSM I2t dV/dt Tstg Tj Peak pulse current Non repetitive surge peak on-state current I2t value for fusing Critical rate of rise of off-state voltage Storage temperature range Maximum junction temperature Parameter Power dissipation on infinite heatsink Tamb = 50 °C 10/1000 µs 8/20 µs tp = 20 ms tp = 20 ms VRM Value 1.7 50 100 30 9 5 - 55 to + 150 150 Unit W A A A2s kV/µs °C °C
THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Parameter Junction to leads (Llead = 10mm) Junction to ambient on printed circuit (Llead = 10 mm) Value 60 100 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Type Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance IRM @ VRM max.
µA V
IR @ VR max. note 1
A V
VBO @ IBO max. note 2
V mA
IH min. note 3
mA
C max. note 4
pF
TPA62 TPA68 TPA100 TPA120 TPA130 TPA180 TPA200 TPA220 TPA240 TPA270
Note 1: Note 3:
2 2 2 2 2 2 2 2 2 2
56 61 90 108 117 162 180 198 216 243
50 50 50 50 50 50 50 50 50 50
62 68 100 120 130 180 200 220 240 270
Note 2: Note 4:
82 90 133 160 173 240 267 293 320 360
800 800 800 800 800 800 800 800 800 800
150 150 150 150 150 150 150 150 150 150
150 150 100 100 100 100 100 100 100 100
IR measured at VR guarantee VBRmin VR See test circuit 2.
Measured at 50 Hz (1 cycle) - See test circuit 1. VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.
2/5
TPA SERIES
TEST CIRCUIT 1 FOR IBO and VBO parameters :
tp = 20ms
A u to Tr a n s f o r m e r 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IB O measur e
Tr a n s f o r m e r 2 2 0 V/ 8 0 0 V 5A
D. U . T
V BO me as ur e
TEST PROCEDURE :
n Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. n VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . TEST CIRCUIT 2 for IH parameter.
R D.U.T. V AT = - 48 V B Surge generator
- VP
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE :
n 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max.
3/5
|
|
