Details, datasheet, quote on part number: BUF460AV
PartBUF460AV
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionNPN Transistor Power Module
CompanyST Microelectronics, Inc.
DatasheetDownload BUF460AV datasheet
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Features, Applications

EASY TO DRIVE TECHNOLOGY (ETD) HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT

Symbol V CEV V CEO(sus) VEBO BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage -5 V) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current = 10 ms) Base Current Base Peak Current = 10 ms) Total Dissipation o C Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink Storage Temperature Max Operation Junction Temperature Value to 150 Unit

R thj-case R thc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.41 0.05

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CER I CEV I EBO Parameter Collector Cut-off Current 5 ) Collector Cut-off Current = -1.5V) Emitter Cut-off Current = 0) Test Conditions = V CEV = V CEV = V CEV = V CEV mH V clamp A IC VCE 100 C

VCEO(sus) * Collector-Emitter Sustaining Voltage FE V CE(sat) DC Current Gain Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage Rate of Rise of On-state Collector

(3 s) Collector-Emitter Dynamic Voltage (5 s) Collector-Emitter Dynamic Voltage tc V CEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber


 

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