Details, datasheet, quote on part number: BUF460AV
CategoryDiscrete => Transistors => Bipolar => Power
DescriptionNPN Transistor Power Module
CompanyST Microelectronics, Inc.
DatasheetDownload BUF460AV datasheet
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Features, Applications



Symbol V CEV V CEO(sus) VEBO BM P tot V isol T stg Tj Parameter Collector-Emitter Voltage -5 V) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current = 10 ms) Base Current Base Peak Current = 10 ms) Total Dissipation o C Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink Storage Temperature Max Operation Junction Temperature Value to 150 Unit

R thj-case R thc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.41 0.05

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CER I CEV I EBO Parameter Collector Cut-off Current 5 ) Collector Cut-off Current = -1.5V) Emitter Cut-off Current = 0) Test Conditions = V CEV = V CEV = V CEV = V CEV mH V clamp A IC VCE 100 C

VCEO(sus) * Collector-Emitter Sustaining Voltage FE V CE(sat) DC Current Gain Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage Rate of Rise of On-state Collector

(3 s) Collector-Emitter Dynamic Voltage (5 s) Collector-Emitter Dynamic Voltage tc V CEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage Without Snubber


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