Details, datasheet, quote on part number: BUF420
PartBUF420
CategoryDiscrete => Transistors => Bipolar => High Voltage => Switching
TitleSwitching
DescriptionHigh Voltage Fast-switching NPN Power Transistors
CompanyST Microelectronics, Inc.
DatasheetDownload BUF420 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS

APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications.

Symbol V CEV V CEO V EBO BM P tot T stg Tj Parameter Collector-Emitter Voltage = -1.5V) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector Current Collector Peak Current < 5 ms) Base Current Base Peak Current < 5 ms) Total Dissipation o C Storage Temperature Max. Operating Junction Temperature Value to 200 Unit

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CER I CEV IEBO Parameter Collector Cut-off Current 5 ) Collector Cut-off Current = -1.5V) Emitter Cut-off Current = 0) Test Conditions o C Min. Typ. Max. Unit mA V

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V EBO VCE(sat) Emitter Base Voltage = 0) Collector-Emitter Saturation Voltage

Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage INDUCTIVE LOAD Storage Time Fall Time Cross Over Time INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall Time Cross Over Time

Symbol tc V CEW Parameter INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall Time Cross Over Time INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber Test Conditions 0 V clamp -5 V clamp V BB clamp mH I CWoff 400 500 Min. Typ. Max. 0.15 0.25 Unit s V


 

Related products with the same datasheet
BUF420A
BUF420AI
Some Part number from the same manufacture ST Microelectronics, Inc.
BUF420A High Voltage Fast-switching NPN Power Transistors
BUF420AW High Voltage Fast-switching NPN Power Transistor
BUF420M
BUF460AV NPN Transistor Power Module
BUH1015 High Voltage Fastswitching NPN Power Transistor
BUH1015HI High Voltage Fast-switching NPN Power Transistor
BUH1015T High Voltage Fastswitching NPN Power Transistor
BUH1215
BUH2M20AP High Voltage NPN Silicon Power Transistor
BUH315 High Voltage Fast-switching NPN Power Transistor
BUH315D
BUH315DFH
BUH515
BUH515D
BUH515FP
BUH517 CRT Horizontal Deflection High Voltage NPN Fastswitching Transistor
BUH615D High Voltage Fast-switching NPN Power Transistor
BUH715 Transistor Polarity NPN Voltage Vcbo 1500 V Voltage Vce Sat Max 1.5 V Voltage Vceo 700 V Current ic @ Vce Sat 7 a Voltage ISOlation 4000 V Pitch Lead 5.45 MM Current ic Av. 10 a
BUL1101E High Voltage Fast-switching NPN Power Transistor
BUL1102E
BUL1102EFP
Same catergory

05GU4B48 : Full-Wave Bridge Rectifier.

2N4033 : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 80V ;; IC(cont) = 1A ;; HFE(min) = 75 ;; HFE(max) = - ;; @ Vce/ic = 5V / 0.1mA ;; FT = 150MHz ;; PD = 0.8W.

BAT42W : Small Signal Schottky Diodes.

H1N4001 : 50V High-efficiency DC/DC Converter.

IRG4PC40F : Low Voltage < 600 Volts. 600V Fast 1-8 KHZ Discrete Igbt in a TO-247AC Package.

ZTX1149A : PNP Low Sat Transistor. PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - January 1997 * VCEO * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation T amb=25C Operating and Storage.

05002-620AKZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000062 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 6.20E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

A152J15C0GF5TAA : CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0015 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Through.

FDS6961AD84Z : 3500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0900 ohms ; Package Type: SOIC-8 ; Number of units in IC: 2.

GPC10.2103K1000A31TR16 : CAPACITOR, METALLIZED FILM, POLYETHYLENE NAPHTHALATE, 1000 V, 0.01 uF, SURFACE MOUNT, 4036. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Surface Mount Technology ; EIA Case Size: 4036 ; Applications: General Purpose ; Operating.

GQM22M5C2H100GB01B : CAPACITOR, CERAMIC, MULTILAYER, 500 V, C0G, 0.00001 uF, SURFACE MOUNT, 1111. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 500 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

SV5621U : 1 A, SILICON, SIGNAL DIODE. s: Package: MELF-1, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA.

U1GWJ2C49TE12L : 0.5 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 500 mA ; Pin Count: 3 ; Number of Diodes: 2.

16ML220M8X7.5 : CAP,AL2O3,220UF,16VDC,20% -TOL,20% +TOL.

23121416 : RESISTOR, THIN FILM, 0.07; 0.25 W, 0.25 %, 25 ppm, 22 ohm - 511000 ohm, SURFACE MOUNT, 1406. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF, ROHS COMPLIANT ; Operating DC Voltage: 200 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).

 
0-C     D-L     M-R     S-Z