Details, datasheet, quote on part number: BUF410A
PartBUF410A
CategoryDiscrete => Transistors => Bipolar => High Voltage => NPN
DescriptionTransistors, Power Bipolar
High voltage fast-switching NPN power transistor
CompanyST Microelectronics, Inc.
DatasheetDownload BUF410A datasheet
Cross ref.Similar parts: BUF410AI
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Features, Applications
Features

High voltage capability Very high switching speed Minimum lot-to-lot spread for reliable operation Low base-drive requirements

Applications
Switch mode power supplies Motor control
Description

The BUF410A is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Figure 1. Internal schematic diagram

Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Parameter Collector-emitter voltage -1.5 V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation 25 C Storage temperature Max. operating junction temperature Value to 150 Unit C

Parameter Thermal resistance junction-case __max Value 1 Unit C/W

Parameter Collector cut-off current (RBE 10 ) Collector cut-off current (VBE -1.5 V) Test conditions VCE 1000 V VCE 1000 V VCE 1000 V VCE 100 C Min. Typ. Max. Unit mA

Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VEBO Emitter-base voltage (IC = 0)

Collector-emitter dynamic voltage (3 s) Collector-emitter dynamic voltage (5 s) Inductive load Storage time Fall time Cross over time


 

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