Details, datasheet, quote on part number: 1N5817
Part1N5817
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes => Power Schottky Diodes->30 and 40V Power Schottky D
TitlePower Schottky Diodes->30 and 40V Power Schottky D
DescriptionLow Drop Power Schottky Rectifier
CompanyST Microelectronics, Inc.
DatasheetDownload 1N5817 datasheet
Cross ref.Similar parts: 1N5817G, 11DQ015, 1N17, 1N5817-E3/54, BAS3010B-03W, BAS3010A-03W, 1N5817-AP-HF, 1N5817-BP-HF
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Features, Applications

MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage 10 ms Sinusoidal 25°C 1200 Value 1N5819 to Unit °C V/µs

dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(

THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to lead Parameter Lead length 10 mm Lead length 10 mm Value 100 45 Unit °C/W

STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions = 25°C

To evaluate the conduction losses use the following equations 0.3 x IF(AV) IF2(RMS ) for 0.3 x IF(AV) IF2(RMS ) for 1N5819 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818).

Fig. 2: Average forward power dissipation versus average forward current (1N5819).
Fig. 2-1: Average forward current versus ambient temperature (=0.5) (1N5817/1N5818).
Fig. 2-2: Average forward current versus ambient temperature (=0.5) (1N5819).
Fig. 3: Normalized avalanche power derating versus pulse duration.
Fig. 4: Normalized avalanche power derating versus junction temperature.

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5817/1N5818).

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819).

Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout).

Fig. 7: Junction capacitance versus reverse voltage applied (typical values).

 

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