Details, datasheet, quote on part number: 1530-1
Part1530-1
CategoryDiscrete => Transistors
DescriptionRF & Microwave Transistors Avionics Applications
CompanyST Microelectronics, Inc.
DatasheetDownload 1530-1 datasheet
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Features, Applications

DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF - 1090 MHz 35 WATTS (min.) DME - 1150 MHz 25 WATTS (typ.) TACAN - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION

DESCRIPTION The is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is packaged in the.280" input matched stripline package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case ° C)

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature

THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
Symbol Test Conditions Value Min. Typ. Max. Unit

Pulse W idth = 10 µSec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance.

IMPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE

 

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