Details, datasheet, quote on part number: 1528-6
Part1528-6
CategoryDiscrete => Transistors
DescriptionRF & Microwave Transistors Avionics Applications
CompanyST Microelectronics, Inc.
DatasheetDownload 1528-6 datasheet
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Features, Applications

DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W (typ.) IFF - 1090 MHz 15 W (min.) DME - 1150 MHz 15 W (typ.) TACAN - 1215 MHz REFRACTORY GOLD METALLIZATION EMITTER BALLASTED AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 20:1 LOAD VSWR CAPABILITY @ SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION

DESCRIPTION The is a gold metallized epitaxial silicon NPN power transistor. The SD1528-06 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1528-06 is packaged in the.280" input matched stripline package, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case ░ C)

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature

THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
Symbol Test Conditions Value Min. Typ. Max. Unit

 

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