Details, datasheet, quote on part number: 1224-10
Part1224-10
CategoryDiscrete => Transistors
DescriptionRF & Microwave Transistors HF SSB Applications
CompanyST Microelectronics, Inc.
DatasheetDownload 1224-10 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

30 MHz 28 VOLTS IMD 28 dB COMMON EMITTER GOLD METALLIZATION POUT 30 W MIN. WITH 18 dB GAIN

DESCRIPTION The 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case ° C)

Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature

THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
Symbol Test Conditions Value Min. Typ. Max. Unit

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A


 

Some Part number from the same manufacture ST Microelectronics, Inc.
1528-6 RF & Microwave Transistors Avionics Applications
1530-1
1534-1
1538-8
18W Power Desk 18W Brick Adapter
19RFDCS910 Contactless Reader Chip Set With ST92163MCU
19RFDCSD10 Contactless Reader Chip Set
1N5711 Small Signal Schottky Diode
1N5817 Low Drop Power Schottky Rectifier
1N581830
1N5818RL
1N581X
1N5820
1N582130
1N5821RL
1N582X
1N5908 Transil
1N5908RL
1N6263 Small Signal Schottky Diode
2901
2901-Cell
Same catergory

1N6309-1N6355 : 500mw Glass Zener Diodes.

2N2219 : Package = TO-39 ;; Level = Jans ;; Vceo (V) = 30 ;; Vcbo (V) = 60 ;; Vebo (V) = 5.0 ;; Ic (A) = 0.80 ;; Power (W) ta = 0.8 ;; Rtja ( C/W) = ;; Tstg/top ( C) = -55 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.40.

APTM100SK18T : Boost Chopper. Application AC and DC motor control Switched Mode Power Supplies Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High.

BYM600A170DN2 : . Inside fast free-wheeling diode Package with insulated metal base plate Diode especially for brake choppers matched with BSM E 3166 Type BYM 170 DN2 Maximum Ratings Parameter Diode reverse voltage °C DC current 80 °C Pulsed diode current, i 2 t-value, Diode, = 10 ms, 150 °C Power dissipation per Diode Chip temperature Storage temperature Thermal resistance,.

MDFB51 : 2212a 2500v Disc Fast Recovery Diode. Double side cooling High surge capability Low recovery charge APPLICATIONS Freewheel Diode D.C. Motor Drives Welding High Frequency Rectification Power Supplies Type Number Repetitive Peak Reverse Voltage VRRM V Conditions Outline type code: CB486. See Package Details for further information. Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward.

MRF3104 : 0.5 W, 1550-1650 Mhz,microwave Linear Power Transistor. Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics: Low Parasitic Microwave Stripline Package Gold Metalization for Improved Reliability Diffused Ballast Resistors Rating Collector­Emitter Voltage Collector­Emitter Voltage Emitter­Base Voltage Collector Current MRF3105 MRF3106 Symbol VCEO VCES VEBO.

03028BR222AJZL : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0022 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

BLF404-T : UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; Number of units in IC: 1.

HSA50560RF : RESISTOR, WIRE WOUND, 50 W, 1 %, 30 ppm, 560 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 560 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 30 ±ppm/°C ; Power Rating: 50 watts (0.0670 HP) ; Standards and Certifications:.

JANSP2N3439 : 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

NSFJ585 : 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-66. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 1 ohms ; Number of units in IC: 1.

RSK22 : RESISTOR, 0.1 W, 0.1; 0.5; 1 %, 25 ppm, 10 ohm - 500000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 25 C (-67 to 77 F).

VY1100K31U2JQ6TV0 : CAPACITOR, CERAMIC, U2J, 0.00001 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; Temperature Coefficient: -750 ppm/°C ; Mounting Style: Through Hole ; Operating Temperature: -40 to 257 F (233 to 398 K).

1C4963 : 16 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.

2N3741.MOD : 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-213AA. s: Polarity: PNP ; Package Type: HERMETIC SEALED, METAL, TO-66, 2 PIN.

 
0-C     D-L     M-R     S-Z