Details, datasheet, quote on part number: FP205
PartFP205
CategoryDiscrete => Transistors => Bipolar => General Purpose
Description
CompanySanyo Semiconductor Corporation
DatasheetDownload FP205 datasheet
Quote
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Features, Applications

Features

Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. The FP205 is composed of 2 chips, one being equivalent to the 2SA1416 and the other 2SC3646, which are placed in one package. Electrical Connection

Specifications

Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg

Mounted on ceramic board (250mm2×0.8mm) 1unit Mounted on ceramic board (250mm2×0.8mm)

Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) IC=(­)400mA, IB=(­)40mA VBE(sat) IC=(­)400mA, IB=(­)40mA V(BR)CBO IC=(­)10µA, IE=0 V(BR)CEO IC=(­)1mA, RBE= V(BR)EBO ton tstg IE=(­)10µA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Conditons Ratings min typ max (­)100 400 MHz pF ns Unit nA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

 

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