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Details, datasheet, quote on part number:M368L3313ETM-CLB3
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| Part: | M368L3313ETM-CLB3 |
| Category: | Memory => DRAM => DDR SDRAM => Modules => Unbuffered DIMM |
| Description: | Description = M368L3313ETM 184Pin Unbuffered Dimm Based on 128Mb E-die (x8) ;; Density(MB) = 256 ;; Organization = 32Mx64 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = B3,AA,A2,B0 ;; #of Pin = 184 ;; Power = C,l ;; Component Composition = (16Mx8)x16 ;; Production Status = Mass Production ;; Comments = DDR266/333 |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download M368L3313ETM-CLB3 datasheet File size : 325 kB |
| Request For quote: | Find where to buy M368L3313ETM-CLB3
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Datasheet text preview:
128MB, 256MB Unbuffered DIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 128Mb E-die (x8) 64/72-bit ECC/Non ECC
Revision 1.1
Rev. 1.1 August. 2003
128MB, 256MB Unbuffered DIMM
Revision History
Revision 1.0 (Dec, 2002) - First release Revision 1.1 (August, 2003) - Corrected typo.
DDR SDRAM
Rev. 1.1 August. 2003
128MB, 256MB Unbuffered DIMM
184Pin Unbuffered DIMM based on 128Mb E-die (x8)
Ordering Information
Part Number M368L1713ETM-C(L)B3/AA/A2/B0 M381L1713ETM-C(L)B3/AA/A2/B0 M368L3313ETM-C(L)B3/AA/A2/B0 M381L3313ETM-C(L)B3/AA/A2/B0 D ensity 128MB 128MB 256MB 256MB Organization 16M x 64 16M x 72 32M x 64 32M x 72
DDR SDRAM
Component Composition 16Mx8( K4H280838E) * 8EA 16Mx8( K4H280838E) * 9EA 16Mx8( K4H280838E) * 16EA 16Mx8( K4H280838E) * 18EA
Interface 1,250mil 1,250mil 1,250mil 1,250mil
Operating Frequencies
B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 166MHz 2 .5-3-3 AA(DDR266@CL=2) 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2 -3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3
Feature
· Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V · Double-data-rate architecture; two data transfers per clock cycle · Bidirectional data strobe(DQS) · Differential clock inputs(CK and CK) · DLL aligns DQ and DQS transition with CK transition · Programmable Read latency 2, 2.5 (clock) · Programmable Burst length (2, 4, 8) · Programmable Burst type (sequential & interleave) · Edge aligned data output, center aligned data input · Auto & Self refresh, 15.6us refresh interval(4K/64ms refresh) · Serial presence detect with EEPROM · PCB : Height 1,250 (mil), single (128MB), double (256MB) sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 1.1 August. 2003
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