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Details, datasheet, quote on part number:M366F0883DJ3-C
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| Part: | M366F0883DJ3-C |
| Category: | Memory => DRAM => Async DRAM => Modules => Unbuffered DIMM |
| Description: | Description = M366F0883DJ3 8Mx64 DRAM Dimm Using 8Mx8,8K&4K Refresh,3.3V,EDO Mode Without Buffer ;; Density(MB) = 64 ;; Organization = 8Mx64 ;; Mode = Edo ;; Refresh = 8K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (8Mx8)*8+EEPROM ;; Production Status = Eol ;; Comments = Unbuffered |
| Company: | Samsung Semiconductor, Inc. |
| Datasheet: | Download M366F0883DJ3-C datasheet File size : 468 kB |
| Request For quote: | Find where to buy M366F0883DJ3-C
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Datasheet text preview:
DRAM MODULE
M366F080(8)3DJ3-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V
GENERAL DESCRIPTION
The Samsung M366F080(8)3DJ3-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)3DJ3-C consists of eight CMOS 8Mx8bits DRAMs in SOJ 400mil packages and one 2K EEPROM for SPD in 8-pin SOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M366F080(8)3DJ3-C is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets.
M366F080(8)3DJ3-C
FEATURES
· Part Identification Part number M366F0803DJ3-C M366F0883DJ3-C PKG SOJ SOJ Ref. 4K 8K CBR ref. ROR ref.
4K/64ms 4K/64ms 8K/64ms
· New JEDEC standard proposal without buffer · Serial Presence Detect with EEPROM · Extended Data Out Mode Operation · CAS-before-RAS Refresh capability · RAS-only and Hidden refresh capability
PERFORMANCE RANGE
Speed -C50 -C60
tR A C
50ns 60ns
tC A C
13ns 15ns
tR C
84ns 104ns
tH P C
20ns 25ns
· LVTTL compatible inputs and outputs · Single +3.3V±0.3V power supply · PCB : Height(1250mil), single sided component
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 F r o n t Pin V SS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 V SS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 *CB0 *CB1 V SS NC NC VCC W0 CAS0 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 Front CAS1 RAS0 OE0 VSS A0 A2 A4 A6 A8 A10 A12 VCC VCC DU VSS OE2 RAS2 CAS2 CAS3 W2 VCC NC NC *CB2 *CB3 VSS DQ16 DQ17 Pin F r o n t P i n 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 DQ18 DQ19 VCC DQ20 NC DU NC V SS DQ21 DQ22 DQ23 V SS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 V SS NC NC NC SDA SCL VCC 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Back VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VCC DQ46 DQ47 *CB4 *CB5 VSS NC NC VCC DU CAS4 Pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Back CAS5 *RAS1 DU V SS A1 A3 A5 A7 A9 A11 *A13 VCC DU DU V SS DU *RAS3 CAS6 CAS7 DU VCC NC NC *CB6 *CB7 V SS DQ48 DQ49 P i n Back 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 DQ50 DQ51 VCC DQ52 NC DU NC V SS DQ53 DQ54 DQ55 V SS DQ56 DQ57 DQ58 DQ59 VCC DQ60 DQ61 DQ62 DQ63 V SS NC NC SA0 SA1 SA2 VCC
PIN NAMES
Pin Name A0 - A11 A0 - A12 DQ0 - DQ63 W0, W2 OE0, OE2 RAS0, RAS2 CAS0 - CAS7 VCC V SS NC DU SDA SCL SA0 -SA2 *CB0 - CB7 Function Address Input(4K ref.) Address Input(8K ref.) Data In/Out Read/Write Enable Output Enable Row Address Strobe Column Address Strobe Power(+3.3V) Ground No Connection Dont use Serial Address /Data I/O Serial Clock Address in EEPROM Check Bit
* These pins are not used in this module.
NOTE : A12 is used for only M366F0883DJ3-C (8K ref.)
REV. 0.1 Oct. 2000
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
RAS0 W0 OE0 A0-A12(A11) CAS0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CAS5 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CAS6 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 CAS7 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 RAS2 W2 OE2
M366F080(8)3DJ3-C
CAS4 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
U0
U4
CAS1
U1
U5
CAS2
U2
U6
CAS3
U3
U7
Note : A12 is used for only M366F0883DJ3 (8K ref.)
Serial PD VCC 0.1 or 0.22uF Capacitor under each DRAM Vss S A 0 S A 1 SA2 To all DRAMs SCL A0 A1 A2 SDA
REV. 0.1 Oct. 2000
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC T stg Pd IOS
M366F080(8)3DJ3-C
Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +150 8 50 Unit V V °C W mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS V IH VIL Min 3.0 0 2.0 -0.3* 2 Typ 3.3 0 Max 3.6 0 V C C +0.3*1 0.8 Unit V V V V
*1 : VCC+1.3V at pulse width15ns which is measured at VCC. *2 : -1.3V at pulse width15ns which is measured at VSS.
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II ( L ) IO(L) VOH V OL Speed -50 -60 Dont care -50 -60 -50 -60 Dont care -50 -60 Dont care Dont care M366F0883DJ3 Min
-
M366F0803DJ3 Max 640 560 8 640 560 720 640 4 880 800 10 5 0.4 Min -10 -5 2.4 Max 880 800 8 880 800 720 640 4 880 800 10 5 0.4
Unit mA mA mA mA mA mA mA mA mA mA uA uA V V
-10 -5 2.4 -
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Extended Data Out Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0VINVCC+0.3V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0VVOUTVCC) VOH : Output High Voltage Level (IOH = -2mA) VOL : Output Low Voltage Level (IOL = 2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC.
REV. 0.1 Oct. 2000
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