Details, datasheet, quote on part number: K4S51163PF
PartK4S51163PF
CategoryMemory => DRAM => SDR SDRAM => 512 Mb
Description8M x 16Bit x 4 Banks Mobile-SDRAM
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
CompanySamsung Semiconductor, Inc.
DatasheetDownload K4S51163PF datasheet
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Features, Applications

1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. CAS latency Burst length Full page). Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. PASR (Partial Array Self Refresh). Internal TCSR (Temperature Compensated Self Refresh) DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation 70°C). 1 /CS Support. 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Part No. K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 111MHz(CL=3),83MHz(CL=2) 111MHz(CL=3)*1,66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package

Notes 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

54Ball(6x9) FBGA DQ9 NC CLK A5 3 VSSQ VDDQ VSSQ VDDQ VSS CKE A4 7 VDDQ VSSQ VDDQ VSSQ VDD CAS DQ4 DQ6 LDQM RAS A2 9 VDD CS A10 VDD

Pin Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground [Unit:mm]


 

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