Details, datasheet, quote on part number: K4S51163PF-Y(P)F75
PartK4S51163PF-Y(P)F75
CategoryMemory => DRAM => SDR SDRAM => 512 Mb
Description8M x 16Bit x 4 Banks Mobile-SDRAM
The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
CompanySamsung Semiconductor, Inc.
DatasheetDownload K4S51163PF-Y(P)F75 datasheet
PackagesFBGA
  

 

Features, Applications

1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. CAS latency Burst length Full page). Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. PASR (Partial Array Self Refresh). Internal TCSR (Temperature Compensated Self Refresh) DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation 70°C). 1 /CS Support. 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Part No. K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 111MHz(CL=3),83MHz(CL=2) 111MHz(CL=3)*1,66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package

Notes 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

54Ball(6x9) FBGA DQ9 NC CLK A5 3 VSSQ VDDQ VSSQ VDDQ VSS CKE A4 7 VDDQ VSSQ VDDQ VSSQ VDD CAS DQ4 DQ6 LDQM RAS A2 9 VDD CS A10 VDD

Pin Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground [Unit:mm]


 

Related products with the same datasheet
K4S51163PF-Y(P)F90
K4S51163PF-Y(P)F1L
Some Part number from the same manufacture Samsung Semiconductor, Inc.
K4S51163PF-Y(P)F90 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS
K4S51163LF 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS
K4S561633F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance
K4S56163LF 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance
K4S56163PF 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance
K4S563233F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance
K4S56323LF 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance
K4S56323PF 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance
K4M28163PF 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance
K4M28163LF 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance
K4M281633F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance
K4S28323LF 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance
K4S64323LH 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance
K4S643233H 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG's high performance
K4S64163LH 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG's high performance
K4S641633H 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG's high performance
K4M64163PH 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG's high performance
K9K1G08R0B 128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B is a 128M(134,217,728) x 8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid
K9K1G08B0B
K9K1G08U0B
K9F1208U0B 64M x 8 Bit NAND Flash MemoryOffered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity.The device is offered in 1.8V, 2.7V, 3.3V Vcc.

K6R1016C1D-J : Fast SRAM Description = K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ;; Organization = 64Kx16 ;; Vcc(V) = 5.0 ;; Speed-tAA(ns) = 10 ;; Operating Temperature = C,i ;; Operating Current(mA) = 65 ;; Standby Current(mA) = 5 ;; Package = 44SOJ,44TSOP2 ;; Production Status = Mass Production ;;

K9F5608U0B-VIB0 : 256M bit Description = K9F5608U0B 32M X 8 Bit / 16M X 16 Bit NAND Flash Memory ;; Organization = 32Mx8 ;; Operating Voltage(V) = 2.7~3.6 ;; Temperature = C,i ;; Speed(ns) = 50 ;; Package = 48TSOP1,63TBGA,48WSOP1 ;; Production Status = Mass Production ;; Comments = 0.15um

KM6264BLG-12 : 8kx8 Bit Low Power CMOS Static RAM

KM684002 : 512kx8 Bit High Speed Static RAM ( 5v Operating ) , Revolutionary Pin Out. Operated at Commercial, Extended And Industrial Temperature Range.

KM68U1000CLRI-10L : Description = KM68U1000C 128K X 8 Bit Low Power And Low Voltage CMOS Static RAM ;; Organization = 128Kx8 ;; Vcc(V) = 2.7~3.3 ;; Speed-tAA(ns) = 85,100 ;; Operating Temperature = C,e,i ;; Operating Current(mA) = 30 ;; Standby Current(uA) = 10 ;; Package = 32SOP,32TSOP1 ;; Production Status = Eol ;; C

M364E0404CT0-C : EDO Edo Mode 4mx64dram Dimm Using 4mx16, 4k & 8k Refresh, 5v

M466S0424CT0-L10 : SODIMM Description = M466S0424CT0 4M X 64 Sdram Sodimm Based on 4M X 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD ;; Density(MB) = 32 ;; Organization = 4Mx64 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 4K/64ms ;; Speed = 10 ;; #of Pin = 144 ;; Power = L ;; Component Composition = (4Mx16)x4+EEPROM

K9K8G08U0A-P : 1G x 8 Bit NAND Flash Memory Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an er

K4H1G3238A-TCB0 : 128mb DDR Sdram

K4H511638C-ZCCC : 128mb DDR Sdram

M312L6523CZ0-CA2 : 64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Specifications: Memory Category: DRAM Chip ; Density: 4831838 kbits ; Number of Words: 64000 k ; Bits per Word: 72 bits ; Package Type: DIMM-184 ; Pins: 184 ; Supply Voltage: 2.5V ; Access Time: 0.8000 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

 
0-C     D-L     M-R     S-Z