Details, datasheet, quote on part number: K4S51163LC-XXXX
PartK4S51163LC-XXXX
CategoryMemory => DRAM => SDR SDRAM => 512 Mb => Mobile SDRAM
TitleMobile SDRAM
DescriptionDescription = K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120/1600uA ;; Speed = 1H,1L,15 ;; Mobile Function = Pasr,tcsr ;; Package = 54CSP ;; Production Status = Mass Production ;; Comments = -
CompanySamsung Semiconductor, Inc.
DatasheetDownload K4S51163LC-XXXX datasheet
  

 

Features, Applications

FEATURES

2.5V power supply LVCOMS compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS latency & 3) Burst length Full page) Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation Special Function Support. PASR (Partial Array Self Refresh). TCSR (Temperature Compensated Self Refresh). DQM for masking Auto & self refresh 64ms refresh period (8K cycle) 1 /CS Support. Extended Temperature Operation 85 C). 54balls DDP CSP

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

-YS : Super Low Power, Operating Temp ~ 85 C. -YG : Low Power, Operating Temp 85 C. Notes 1. In case of 40MHz Frequency, CL1 can be supported. 2. In case of 33MHz Frequency, CL1 can be supported

Timing Register * Samsung Electronics reserves the right to change products or specification without notice.

Pin Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground


 

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K4S51163LC-YG/S Description = K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120/1600uA ;; Speed = 1H,1L,15 ;; Mobile
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K4S51323LC Description = K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ;; Organization = 16Mx32 ;; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ;; Temperature = G,s ;; Current(Icc1/Icc6) = 120mA/1600uA ;; Speed = 1H,1L,15 ;; Mobile
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K4S560432B Description = K4S560432B 16MB X 4Bit X 4Banks Synchronous DRAM ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production
K4S560432C Description = K4S560432C 16Mx4Bitx4Banks Synchronous DRAM ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7C,75,1H,1L ;; Package = 54TSOP2 ;; Power = B,i,p,e,n ;; Production
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K4S560432D Description = K4S560432D 16M X 4bit X 4Banks Synchronous DRAM LVTTL ;; Organization = 64Mx4 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 7A,1H,1L ;; Package = 54TSOP2,54sTSOP2 ;; Power
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