Details, datasheet, quote on part number: K4S511632M-TC/TL75
PartK4S511632M-TC/TL75
CategoryMemory => DRAM => SDR SDRAM => 512 Mb
DescriptionDescription = K4S511632M 8M X 16Bit X 4 Banks Synchronous DRAM ;; Organization = 32Mx16 ;; Bank/ Interface = 4B/LVTTL ;; Refresh = 8K/64ms ;; Speed = 75,1H,1L ;; Package = 54TSOP2 ;; Power = C,l ;; Production Status = Mass Prodution ;; Comments = Monolithic
CompanySamsung Semiconductor, Inc.
DatasheetDownload K4S511632M-TC/TL75 datasheet
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Features, Applications

Samsung Electronics reserves the right to change products or specification without notice.
FEATURES

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS latency & 3) Burst length Full page) Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (8K cycle) Part No. K4S511632M-TC/TL1H K4S511632M-TC/TL1L

The is 536,870,912 bits synchronous high data rate Dynamic RAM organized x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Column Decoder Col. Buffer Latency & Burst Length
DQM * Samsung Electronics reserves the right to change products or specification without notice.

 

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K4S511632M-TC/TL1H
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