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Details, datasheet, quote on part number:F1004
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| Part: | F1004 |
| Category: | RF & Microwaves => Transistors => FETs => VDMOS => Power |
| Description: | Pout W = 80 ;; Freq MHZ = 175 ;; Gain DB = 13 ;; Theta JC = 1.2 ;; GM Mho = 3.2 ;; Idsat a = 22 ;; Ciss PF = 132 ;; CRSS PF = 16 ;; Coss PF = 80 ;; Die = 4 ;; Style = Single Ended ;; PKG = at |
| Company: | Polyfet RF Devices |
| Datasheet: | Download F1004 datasheet File size : 39 kB |
| Request For quote: | Find where to buy F1004
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Datasheet text preview:
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1004
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 150 Watts Junction to Case Thermal Resistance 1.2 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
8A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 13 60 TYP
80WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz Idq = 0.8 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 3.2 0.35 22 132 16 80 MIN 65 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 28.0 V, Vds = 0 V, Ids = 0.4 A,
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1004
POUT VS PIN GRAPH
F1004 POUT vs PIN Idq=0.8A F=100 Mhz Vds= 28v
120 22 1000
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
100
20
80 Efficiency = 60%
18
60
16 100
Coss
Ciss
40
14
20
12
Crss
0 0 1 2 3 4 5 6 7 8 9 10 0
POUT GAIN
10
P I N IN WATTS
5
10
15
V D S IN VOLTS
20
25
30
IV CURVE
F 1 B 4DIE IV CURVE
30 100
ID AND GM VS VGS
F 1 B 4 DIE GM & ID vs VGS
25
Id
20 10 15
10 1 5
Gm
0 0 2 4 6 8 10
Vds in Volts
12
14
16
18
20 0.1 0 2 4 6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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