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Details, datasheet, quote on part number:F1003
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| Part: | F1003 |
| Category: | RF & Microwaves => Transistors => FETs => VDMOS => Power |
| Description: | Pout W = 60 ;; Freq MHZ = 175 ;; Gain DB = 13 ;; Theta JC = 1.5 ;; GM Mho = 2.4 ;; Idsat a = 16.5 ;; Ciss PF = 99 ;; CRSS PF = 12 ;; Coss PF = 60 ;; Die = 3 ;; Style = Single Ended ;; PKG = am |
| Company: | Polyfet RF Devices |
| Datasheet: | Download F1003 datasheet File size : 39 kB |
| Request For quote: | Find where to buy F1003
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Datasheet text preview:
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1003
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
6A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 13 60 TYP
60WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.6 A, Vds = 28.0 V, F = 175 MHz Idq = 0.6 A, Vds = 28.0 V, F = 175 MHz Idq = 0.6 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 2.4 0.5 16.5 99 12 60 MIN 65 3 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.15 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.3 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 12 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1003
POUT VS PIN GRAPH
F1003 POUT vs PIN Idq=0.6A F=100 Mhz Vds=28v
100 90 80 70 60 50 40 30 20 Efficiency = 60% 10 0 0 1 2 3 4
P I N IN WATTS
POUT GAIN
CAPACITANCE VS VOLTAGE
F1B 3DIE CAPACITANCE
20 19 18 17 16 15 14 13 12 11 10 100 1000
Coss
Ciss
Crss
10 0 5 10 15
V D S IN VOLTS
5
6
7
8 20 25 30
IV CURVE
F 1 B 3DIE IV CURVE
20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10
Vds in Volts
Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V
ID AND GM VS VGS
F 1 B 3 DIE GM & ID vs VG
100
Id
10
1
Gm
12
14
16
18
20 0.1 0 2 4 6
Vgs in Volts
8
10
12
14
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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