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Details, datasheet, quote on part number:F1002
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| Part: | F1002 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => RF Specific |
| Description: | Vdmos Transistor |
| Company: | Polyfet RF Devices |
| Datasheet: | Download F1002 datasheet File size : 38 kB |
| Request For quote: | Find where to buy F1002
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Datasheet text preview:
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1002
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 1.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
4A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 15 60 TYP
40WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 1.6 0.7 11 66 8 40 MIN 65 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 28.0 V, Vds = 0 V, Ids = 0.2 A,
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1002
POUT VS PIN GRAPH
F1002 POUT vs PIN
60
CAPACITANCE VS VOLTAGE
F1B 2 DICE CAPACITANCE
18 17 16 1000
Idq= 0.4A F=175 Mhz VDS = 28V
50
40
15 14 13 EFFICIENCY = 75% 12 11 10 0 0.5 1 1.5 2 2.5 3 3.5
100
Coss
30
Ciss
20
10
Crss
10
0
P I N IN WATTS
POUT GAIN
1 0 5 10 15
V D S IN VOLTS
20
25
30
IV CURVE
F 1 B 2 DICE IV CURVE
12 100
ID AND GM VS VGS
F 1 B 2 DIE GM & ID vs VGS
10
8 10 6
Id
4 1 2
0 0 2 4 6 8 10
Vds in Volts
Gm
12 14 16 18 20 0.1 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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