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Details, datasheet, quote on part number:F1001C
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Datasheet text preview:
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1001C
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.13 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
2A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 16 60 TYP
20WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz Idq = 0.2 A, Vds = 28.0 V, F = 175 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 0.8 1 5.5 33 4 20 MIN 65 1 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.05 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 4 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1001C
POUT VS PIN GRAPH
F1001C POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V
F1B 1 DIE Capacitance vs Vds 35 30 20 19 18 16 15 15 10 5 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
1 0 5 10 15
V D S IN VOLTS
CAPACITANCE VS VOLTAGE
100
POUT IN WATTS
25 20
14 Efficiency = 75% 13 12 11 10
PIN IN WATTS
POUT GAIN
GAIN IN dB
17
Coss
Ciss
10
Crss
20
25
30
IV CURVE
F 1 B 1DIE IV CURVE
6 10
ID AND GM VS VGS
F 1 B 1 DIE GM & ID vs VG
Id
5
4 1 3
2 0.1 1
Gm
0 0 2 4 6 8 10
Vds in Volts
12
14
16
18
20 0.01 0 2 4 6 8 10 12 14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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