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Details, datasheet, quote on part number:PHX6NA60E
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Datasheet text preview:
Philips Semiconductors
Objective specification
PowerMOS transistors Low capacitance Avalanche energy rated
FEATURES
· Repetitive Avalanche Rated · Fast switching · Low feedback capacitance · Stable off-state characteristics · High thermal cycling performance · Low thermal resistance
PHX6NA60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 3.9 A RDS(ON) 1.2
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHX6NA60E is supplied in the SOT186A full pack, isolated package.
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k Ths = 25 °C; VGS = 10 V Ths = 100 °C; VGS = 10 V Ths = 25 °C Ths = 25 °C MIN. - 55 MAX. 600 600 ± 30 3.9 2.6 26 45 150 UNIT V V V A A A W °C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Single pulse avalanche energy Repetitive avalanche energy1 Avalanche current CONDITIONS Unclamped inductive load, ID = 6.5A; VDD 50 V; starting Tj = 25°C; RGS = 50 ; VGS = 10 V MIN. MAX. 570 9.5 6.5 UNIT mJ mJ A
1 pulse width and repetition rate limited by Tj max. January 1998 1 Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors Low capacitance Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. -
PHX6NA60E
TYP.
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 60 2.78 K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient Drain-source on resistance RDS(ON) VGS(TO) Gate threshold voltage gfs Forward transconductance IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 600 2.0 3 TYP. MAX. UNIT 0.1 3.0 4.5 2 50 10 7 23 3.5 7.5 140 40 1.2 4.0 100 500 200 75 50 125 110 30 1550 V %/K V S µA µA nA nC nC nC ns ns ns ns nH nH pF pF pF
VGS = 10 V; ID = 3.25 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 3.25 A VDS = 600 V; VGS = 0 V VDS = 480 V; VGS = 0 V; Tj = 125 °C Gate-source leakage current VGS = ±30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 6.5 A; VDD = 480 V; VGS = 10 V VDD = 300 V; RD = 56 ; RG = 9.1
Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
January 1998
2
Rev 1.000
Philips Semiconductors
Objective specification
PowerMOS transistors Low capacitance Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS Ths = 25°C Ths = 25°C IS = 6.5 A; VGS = 0 V IS = 6.5 A; VGS = 0 V; dI/dt = 100 A/µs MIN. -
PHX6NA60E
TYP. MAX. UNIT 530 6.7 6.5 26 1.2 A A V ns µC
January 1998
3
Rev 1.000
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