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Details, datasheet, quote on part number:PHX4ND40E
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| Part: | PHX4ND40E |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | PHX4ND40E; Powermos Transistors FredFET, Avalanche Energy Rated |
| Company: | Philips Semiconductors |
| Datasheet: | Download PHX4ND40E datasheet File size : 61 kB |
| Request For quote: | Find where to buy PHX4ND40E
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Datasheet text preview:
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
FEATURES
· Repetitive Avalanche Rated · Fast switching · Stable off-state characteristics · High thermal cycling performance · Isolated package · Fast reverse recovery diode
PHX4ND40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V ID = 2.7 A
g
RDS(ON) 1.8
s
trr = 180 ns SOT186A
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHX4ND40E is supplied in the SOT186A full pack isolated package.
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current1 Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 °C to 150°C Tj = 25 °C to 150°C; RGS = 20 k Ths = 25 °C; VGS = 10 V Ths = 100 °C; VGS = 10 V Ths = 25 °C Ths = 25 °C MIN. - 55 MAX. 400 400 ± 30 2.7 1.7 18 30 150 UNIT V V V A A A W °C
August 1998
1
Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN. -
PHX4ND40E
MAX. 190
UNIT mJ
EAR IAS, IAR
Unclamped inductive load, IAS = 1.5 A; tp = 0.3 ms; Tj prior to avalanche = 25°C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 4.4 A; tp = 1 µs; Tj prior to avalanche = 25°C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current
-
5.5 4.4
mJ A
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 °C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 60 4.1 K/W K/W
1 pulse width and repetition rate limited by Tj max. August 1998 2 Rev 1.100
Philips Semiconductors
Product specification
PowerMOS transistors FREDFET, Avalanche energy rated
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS(TO) Gate threshold voltage Forward transconductance gfs IDSS Drain-source leakage current IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf Ld Ls Ciss Coss Crss V(BR)DSS CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 400 2.0 1.3 -
PHX4ND40E
TYP. MAX. UNIT 0.1 1.3 3.0 2.2 1 30 10 26 2 14 10 30 55 38 4.5 7.5 310 60 36 1.8 4.0 25 250 200 30 4 17 V %/K V S µA µA nA nC nC nC ns ns ns ns nH nH pF pF pF
VGS = 10 V; ID = 2.2 A VDS = VGS; ID = 0.25 mA VDS = 30 V; ID = 2.2 A VDS = 400 V; VGS = 0 V VDS = 320 V; VGS = 0 V; Tj = 125 °C Gate-source leakage current VGS = ±30 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 4.4 A; VDD = 320 V; VGS = 10 V VDD = 200 V; RD = 47 ; RG = 18
Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 °C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Irrm Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current CONDITIONS Ths = 25°C Ths = 25°C IS = 4.4 A; VGS = 0 V IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C IS = 4.4 A; VGS = 0 V; dI/dt = 100 A/µs; 125°C MIN. TYP. MAX. UNIT 180 220 0.65 2.6 15 4.4 18 1.5 A A V ns ns µC µC A
August 1998
3
Rev 1.100
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